AP6982GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Low On-resistance
▼
Fast Switching Characteristic
D1
D2
D1
D2
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
CH-1
BV
DSS
R
DS(ON)
I
D
30V
18mΩ
8.5A
30V
26mΩ
7.3A
▼
Surface Mount Package
▼
RoHS Compliant & Halogen-Free
SO-8
S1
G2
S2
G1
CH-2
BV
DSS
R
DS(ON)
I
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
D1
D2
G2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
30
+25
8.5
6.8
30
2.0
0.016
-55 to 150
-55 to 150
Rating
CH-1
CH2
30
+25
7.3
5.8
30
V
V
A
A
A
W
W/℃
℃
℃
Units
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
1
201101253
AP6982GM-HF
CH-1 Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.03
15
23
-
12
-
-
-
14
4
8
12
7
25
9
240
165
1.6
Max. Units
-
-
18
30
3
-
1
25
±100
22
-
-
-
-
-
-
-
-
2.4
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
o
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=8A
V
GS
=4.5V, I
D
=6A
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=8A
V
DS
=30V, V
GS
=0V
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=24V, V
GS
=0V
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
GS
=+25V, V
DS
=0V
I
D
=8A
V
DS
=24V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω,V
GS
=10V
R
D
=15Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
1050 1680
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=1.7A, V
GS
=0V
I
S
=8A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
23
15
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Time
2
Reverse Recovery Charge
2
AP6982GM-HF
CH-2 Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Test Conditions
V
GS
=0V, I
D
=250uA
Reference to 25℃, I
D
=1mA
V
GS
=10V, I
D
=7A
V
GS
=4.5V, I
D
=5A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=7A
V
DS
=30V, V
GS
=0V
V
GS
=+25V, V
DS
=0V
I
D
=7A
V
DS
=24V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω,V
GS
=10V
R
D
=15Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
30
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.03
22
36
-
10
-
-
-
9
3
5
9
6
19
6
640
150
105
1.7
Max. Units
-
-
26
45
3
-
1
25
+100
15
-
-
-
-
-
-
1030
-
-
2.5
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=24V, V
GS
=0V
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=1.7A, V
GS
=0V
I
S
=7A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
18
8
Max. Units
1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP6982GM-HF
Channel-1
50
50
T
A
=25
o
C
40
10V
7.0V
5.0V
I
D
, Drain Current (A)
4.5V
T
A
=150
o
C
40
10V
7.0V
5.0V
4.5V
I
D
, Drain Current (A)
30
30
20
20
10
10
V
G
=3.0V
0
0
1
2
3
4
0
0
1
2
3
V
G
=3.0V
4
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
28
1.6
I
D
=6A
T
A
=25 C
1.4
24
o
I
D
=8A
V
G
=10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.2
20
1.0
16
0.8
12
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
,Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
8
4
T
j
=150
o
C
T
j
=25
o
C
Normalized V
GS(th)
(V)
1.2
6
1.5
I
S
(A)
1
2
0.5
0
0
0.2
0.4
0.6
0.8
1
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP6982GM-HF
Channel-1
f=1.0MHz
12
1600
I
D
=8A
10
V
GS
, Gate to Source Voltage (V)
1200
8
C (pF)
V
DS
=16V
V
DS
=20V
V
DS
=24V
C
iss
800
6
4
400
2
C
oss
C
rss
0
0
0
5
10
15
20
25
30
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
100us
10
Normalized Thermal Response (R
thja
)
0.2
1ms
I
D
(A)
0.1
0.1
0.05
1
10ms
100ms
1s
10s
DC
0.02
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
=135
o
C/W
0.1
o
T
A
=25 C
Single Pulse
0.01
0.1
1
10
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
V
DS
=5V
I
D
, Drain Current (A)
30
V
G
T
j
=25
o
C
T
j
=150
o
C
Q
G
4.5V
20
Q
GS
Q
GD
10
Charge
0
0
2
4
6
8
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
