AP75T10GS/P-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower On-resistance
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
100V
15mΩ
65A
S
Description
Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole
version (AP75T10GP) are available for low-profile applications.
G
D
TO-220(P)
S
GD
S
TO-263(S)
Units
V
V
A
A
A
W
W/℃
℃
℃
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
100
+20
65
41
260
138
1.11
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
0.9
40
62
Units
℃/W
℃/W
℃/W
1
201309044
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
AP75T10GS/P-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=1mA
Min.
100
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
Typ.
-
0.09
-
-
-
52
-
-
-
69
12
39
12
75
220
250
540
310
1.1
Typ.
-
51
74
Max. Units
-
-
15
21
3
-
10
100
+100
110.4
-
-
-
-
-
-
-
-
-
V
V/℃
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Symbol
V
SD
t
rr
Q
rr
V
GS
=10V, I
D
=30A
V
GS
=4.5V, I
D
=16A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=30A
V
DS
=100V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=30A
V
DS
=80V
V
GS
=4.5V
V
DS
=50V
I
D
=30A
R
G
=10Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Test Conditions
I
S
=30A, V
GS
=0V
I
S
=30A, V
GS
=0V
dI/dt=100A/µs
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=80V ,V
GS
=0V
5690 9100
Source-Drain Diode
Max. Units
1.3
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP75T10GS/P-HF
250
120
T
C
= 25
o
C
200
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
6.0 V
5.0V
4.5V
T
C
= 150
o
C
100
80
10V
6.0V
5.0V
4.5V
V
G
=3.0V
150
60
V
G
=3.0V
100
40
50
20
0
0
2
4
6
8
0
0
1
2
3
4
5
6
7
8
9
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
17
2.0
I
D
=16A
16
1.8
I
D
=30A
V
G
=10V
T
C
=25
o
C
Normalized R
DS(ON)
1.6
R
DS(ON)
(m
Ω
)
15
1.4
14
1.2
1.0
13
0.8
12
0.6
11
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
45
30
Normalized V
GS(th)
1.5
I
S
(A)
T
j
=150
o
C
15
1
T
j
=25 C
o
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP75T10GS/P-HF
f=1.0MHz
10
10000
I
D
= 30 A
V
GS
, Gate to Source Voltage (V)
8
C
iss
6
V
DS
= 50 V
V
DS
= 64 V
V
DS
= 80 V
C (pF)
1000
4
C
oss
C
rss
2
0
0
20
40
60
80
100
120
140
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
Operation in this
area limited by
R
DS(ON)
0.2
I
D
(A)
100us
1ms
10
0.1
0.1
0.05
P
DM
0.02
0.01
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
10ms
T
c
=25 C
Single Pulse
1
0.1
1
10
100
o
100ms
DC
1000
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
模拟电子
