AP92T03GS/P-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower On-resistance
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
30V
4mΩ
80A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching,ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP92T03GP)
are available for low-profile applications.
G
D
S
TO-263(S)
G
D
TO-220(P)
S
Units
V
V
A
A
A
W
W/℃
℃
℃
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
+20
80
50
320
89
0.71
-55 to 150
-55 to 150
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
4
Value
1.4
40
62
Units
℃/W
℃/W
℃/W
1
201303053
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
AP92T03GS/P-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=40A
V
GS
=4.5V, I
D
=30A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Symbol
V
SD
t
rr
Q
rr
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=40A
V
DS
=24V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=40A
V
DS
=20V
V
GS
=4.5V
V
DS
=15V
I
D
=40A
R
G
=1Ω,V
GS
=10V
R
D
=0.375Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Test Conditions
I
S
=40A, V
GS
=0V
I
S
=20A, V
GS
=0V,
dI/dt=100A/µs
Drain-Source Leakage Current (T
j
=125
o
C)
V
DS
=24V ,V
GS
=0V
Min.
30
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
Typ.
-
-
-
-
100
-
-
-
45
6
26
12
63
40
7
930
770
Typ.
-
39
42
Max. Units
-
4
5.2
2
-
1
250
+100
72
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
3500 5600
Source-Drain Diode
Max. Units
1.3
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A .
4.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP92T03GS/P-HF
280
240
240
T
C
= 25 C
o
I
D
, Drain Current (A)
200
I
D
, Drain Current (A)
10 V
7.0 V
5.0 V
4.5 V
T
C
= 150
o
C
200
160
10V
7.0V
5.0V
4.5V
160
120
120
V
G
= 3.0 V
V
G
= 3 .0V
80
80
40
40
0
0
2
4
6
8
0
0
2
4
6
8
10
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.4
I
D
=30A
T
C
=25
o
C
2.0
8
I
D
=40A
V
G
=10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.6
6
1.2
4
0.8
2
2
4
6
8
10
0.4
25
50
75
100
125
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
6.0
40
30
5.0
R
DS(ON)
(m
Ω
)
T
j
=150 C
I
S
(A)
o
T
j
=25 C
o
V
GS
=4.5V
4.0
20
V
GS
=10V
3.0
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
2.0
0
20
40
60
80
100
V
SD
, Source-to-Drain Voltage (V)
I
D
, Drain Current (A)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. On-Resistance vs.
Drain Current
3
AP92T03GS/P-HF
f=1.0MHz
14
10000
I
D
= 40 A
V
GS
, Gate to Source Voltage (V)
12
10
8
C (pF)
V
DS
= 12 V
V
DS
= 16 V
V
DS
= 20 V
C
iss
1000
6
C
oss
C
rss
4
2
0
0
20
40
60
80
100
120
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
100us
0.2
I
D
(A)
0.1
0.1
0.05
1ms
10
T
C
=25 C
Single Pulse
1
0.1
1
10
o
10ms
100ms
1s
DC
P
DM
0.02
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
Single Pulse
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
280
V
DS
=5V
240
V
G
Q
G
T
j
=25 C
o
I
D
, Drain Current (A)
200
T
j
=150 C
o
4.5V
Q
GS
Q
GD
160
120
80
40
Charge
0
Q
0
1
2
3
4
5
6
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
微控制器 MCU
