AP9408AGH
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼
Lower Gate Charge
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
30V
10mΩ
53A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
□
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±20
53
33
160
44.6
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
2.8
110
Units
℃/W
℃/W
Data & specifications subject to change without notice
1
200810283
AP9408AGH
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=30A
V
GS
=4.5V, I
D
=20A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=30A
V
DS
=30V, V
GS
=0V
V
GS
=±20V
I
D
=20A
V
DS
=24V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=3.3Ω,V
GS
=10V
R
D
=15Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
30
-
-
6.5
1.8
3.7
7
4.5
16
6
600
185
80
2.5
Max. Units
-
10
15
3
-
10
±100
10.5
-
-
-
-
-
-
960
-
-
3.8
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=30A, V
GS
=0V
I
S
=10A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
23
16
Max. Units
1.2
-
-
V
ns
nC
t
rr
Q
rr
Notes:
1.Pulse width limited by max. junction temperature
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9408AGH
160
100
T
C
=25 C
o
I
D
, Drain Current (A)
120
I
D
, Drain Current (A)
10V
7.0 V
6.0V
5.0 V
T
C
=150 C
80
o
10V
7 .0V
6.0V
5.0 V
V
G
=4.0V
V
G
= 4.0 V
80
60
40
40
20
0
0.0
1.0
2.0
3.0
4.0
5.0
0
0.0
1.0
2.0
3.0
4.0
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
14
2.0
I
D
=20A
13
T
C
=25 C
Normalized R
DS(ON)
1.6
o
I
D
=30A
V
G
=10V
R
DS(ON)
(m
Ω
)
12
11
1.2
10
0.8
9
8
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
30
20
o
T
j
=150 C
T
j
=25
o
C
Normalized V
GS(th)
(V)
1.2
1.2
I
S
(A)
0.8
10
0.4
0
0
0.4
0.8
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9408AGH
8
1000
f=1.0MHz
I
D
=20A
V
GS
, Gate to Source Voltage (V)
800
6
4
C (pF)
V
DS
=15V
V
DS
=18V
V
DS
=24V
600
C
iss
400
2
200
C
oss
C
rss
0
0
2
4
6
8
10
12
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
100
Normalized Thermal Response (R
thjc
)
Duty factor = 0.5
0.2
100us
I
D
(A)
10
0.1
0.1
0.05
1
T
C
=25
o
C
Single Pulse
0
0.1
1
10
1ms
10ms
100ms
DC
P
DM
t
0.02
T
Duty Factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
Single Pulse
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D
D1
SYMBOLS
Millimeters
MIN
NOM
MAX
A2
A3
B1
D
D1
E3
F
1.80
0.40
0.40
6.00
4.80
3.50
2.20
0.50
5.10
0.50
--
0.35
2.30
0.50
0.70
6.50
5.35
4.00
2.63
0.85
5.70
1.10
2.30
0.50
2.80
0.60
1.00
7.00
5.90
4.50
3.05
1.20
6.30
1.80
--
0.65
E2
E3
E1
F1
E1
E2
e
C
B1
F1
F
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
e
A2
R : 0.127~0.381
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Laser Marking
Part Number
Meet Rohs requirement
for low voltage MOSFET only
9408AGH
LOGO
YWWSSS
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
