AP98T03GW-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Ultra-low On-resistance
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
30V
3mΩ
145A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The TO-3P package is widely preferred for commercial-industrial
surface mount applications and suited for higher voltage applications
such as SMPS.
D
S
TO-3P
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Chip)
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
3
Rating
30
+20
145
80
80
320
104
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
W
℃
℃
Continuous Drain Current, V
GS
@ 10V
3
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
1.2
40
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
201001251
AP98T03GW-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=40A
V
GS
=4.5V, I
D
=30A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=40A
V
DS
=30V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=40A
V
DS
=24V
V
GS
=4.5V
V
DS
=15V
I
D
=40A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
90
-
-
71
9
41
14
78
74
136
810
400
1.1
Max. Units
-
3
4.2
3
-
10
+100
115
-
-
-
-
-
-
-
-
2.2
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
o
3100 4960
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Test Conditions
I
S
=40A, V
GS
=0V
I
S
=10A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
54
74
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP98T03GW-HF
300
160
T
C
= 25 C
250
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
200
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
T
C
= 1 50
o
C
120
10V
7.0V
6.0V
5.0V
V
G
= 4.0V
150
80
100
40
50
0
0
2
4
6
8
10
12
0
0
1
2
3
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
4
2.0
I
D
=30A
4
T
C
=25 C
1.6
o
I
D
=40A
V
G
=10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
3
1.2
3
0.8
2
2
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
40
30
Normalized V
GS(th)
(V)
1.2
1.4
1.2
T
j
=150
o
C
I
S
(A)
T
j
=25
o
C
20
0.8
10
0.4
0
0
0.2
0.4
0.6
0.8
1
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP98T03GW-HF
10
4000
f=1.0MHz
I
D
= 40 A
V
GS
, Gate to Source Voltage (V)
8
6
C (pF)
V
DS
= 15 V
V
DS
= 18 V
V
DS
= 24 V
3000
C
iss
2000
4
1000
2
C
oss
C
rss
0
0
20
40
60
80
1
5
9
13
17
21
25
29
0
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
Operation in this area
limited by R
DS(ON)
100
0.2
I
D
(A)
100us
0.1
0.1
0.05
1ms
10
0.02
0.01
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
T
C
=25
o
C
Single Pulse
1
0.1
1
10
10ms
100ms
DC
Single Pulse
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
stm32/stm8
