AP9923GEO-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Low On-Resistance
▼
Small & Thin Package
▼
Capable of 1.8V Gate Drive
▼
RoHS Compliant & Halogen-Free
D2
S2
G2
S2
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
S1
D1
S1
G1
-12V
25mΩ
-7A
TSSOP-8
I
D
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1
G1
G2
D2
S1
S2
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
3
, V
GS
@ 4.5V
Drain Current
3
, V
GS
@ 4.5V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Rating
- 12
+8
-7.0
-5.0
-30
1
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Rthj-L
Parameter
Maximum Thermal Resistance, Junction-ambient
Maximum Thermal Resistance, Junction-lead
3
Value
125
75
Unit
℃/W
℃/W
1
201501275
Data and specifications subject to change without notice
AP9923GEO-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-4.5V, I
D
=-7A
V
GS
=-2.5V, I
D
=-6A
V
GS
=-1.8V, I
D
=-5A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-5V, I
D
=-7A
V
DS
=-12V, V
GS
=0V
V
GS
=+8V, V
DS
=0V
I
D
= -7A
V
DS
= -6V
V
GS
= -4.5V
V
DS
= -6V
I
D
= -5A
R
G
= 3.3Ω
V
GS
= -5V
V
GS
=0V
V
DS
=-6V
f=1.0MHz
f=1.0MHz
Min.
-12
-
-
-
-0.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
7
-
-
-
28
3
8
12
55
75
100
635
565
5
Max. Units
-
25
32
48
-1
-
-1
-10
+30
45
-
-
-
-
-
-
-
-
7.5
V
mΩ
mΩ
mΩ
V
S
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Drain-Source Leakage Current (T
j
=70
o
C)
V
DS
=-9.6V ,V
GS
=0V
2250 3600
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
T
j
=25℃, I
S
=-0.84A, V
GS
=0V
I
S
= -7A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
61
56
Max. Units
-1.2
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9923GEO-HF
30
30
T
A
=25
o
C
25
-I
D
, Drain Current (A)
20
-I
D
, Drain Current (A)
-5.0V
-4.5V
-3.5V
-2.5V
V
G
= -1.8V
T
A
=150
o
C
25
20
-5.0V
-4.5V
-3.5V
-2.5V
V
G
= -1.8 V
15
15
10
10
5
5
0
0
1
2
3
0
0
1
2
3
4
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
40
1.6
I
D
= -6.0A
T
A
=25 C
1.3
o
I
D
= -7.0A
V
G
= -4.5V
Normalized R
DS(ON)
30
R
DS(ON)
(m
Ω
)
1.0
20
0.7
10
0
2
4
6
8
0.4
-50
0
50
100
150
-V
GS
(V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
0.8
10
8
0.6
6
T
j
=150
o
C
4
T
j
=25 C
o
-V
GS(th)
(V)
1.2
-I
S
(A)
0.4
0.2
2
0
0
0.2
0.4
0.6
0.8
1
0
-50
0
50
100
150
-V
SD
(V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9923GEO-HF
f=1.0MHz
8
10000
-V
GS
, Gate to Source Voltage (V)
6
V
DS
= -6V
4
C (pF)
I
D
= -7A
C
iss
1000
C
oss
C
rss
2
0
0
10
20
30
40
50
100
1
3
5
7
9
11
13
Q
G
, Total Gate Charge (nC)
-V
DS
(V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty Factor=0.5
10
Operation in this
area limited by
R
DS(ON)
Normalized Thermal Response (R
thja
)
100us
1ms
0.2
0.1
0.1
0.05
-I
D
(A)
1
10ms
100ms
0.02
0.01
0.01
P
DM
t
T
Single Pulse
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ Ta
R
thja
=208
o
C/W
0.1
T
A
=25
o
C
Single Pulse
0.01
0.01
0.1
1
10
1s
DC
0.001
100
0.0001
0.001
0.01
0.1
1
10
100
-V
DS
(V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
o
V
DS
= -5V T
j
=25 C
25
T
j
=150
o
C
V
G
Q
G
-I
D
, Drain Current (A)
20
-4.5V
Q
GS
Q
GD
15
10
5
Charge
0
1
2
3
4
Q
0
-V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4
AP9923GEO-HF
MARKING INFORMATION
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
9923GEO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
