AP9936GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
DC-DC Application
▼
Dual N-channel Device
▼
Surface Mount Package
▼
RoHS Compliant & Halogen-Free
S2
D1
D1
D2
D2
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
BV
DSS
R
DS(ON)
G2
30V
50mΩ
5A
I
D
SO-8
S1
G1
Description
AP9936 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The SO-8 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
D1
G2
S1
D2
G1
S2
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
3
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
Rating
30
+20
5
4
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
Data and specifications subject to change without notice
1
201501094
AP9936GM-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=3.9A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=250uA
V
DS
=15V, I
D
=5A
V
DS
=30V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=5A
V
DS
=15V
V
GS
=5V
V
DS
=15V
I
D
=1.5A
R
G
=3.3Ω,V
GS
=10V
R
D
=10Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Min.
30
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
6
-
-
6.1
1.4
3.3
6.7
6.4
22.1
2.1
240
145
55
Max. Units
-
50
80
3
-
10
+100
-
-
-
-
-
-
-
-
-
-
V
m
m
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
I
S
V
SD
Parameter
Continuous Source Current ( Body Diode )
Test Conditions
V
D
=V
G
=0V , V
S
=1.2V
T
j
=25℃, I
S
=1.7A, V
GS
=0V
Min.
-
-
Typ.
-
-
Max. Units
1.67
1.2
A
V
Forward On Voltage
2
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 135℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9936GM-HF
50
40
10V
40
10V
T
A
=150 C
o
T
A
=25
o
C
8.0V
I
D
, Drain Current (A)
30
8.0V
I
D
, Drain Current (A)
30
5.0V
6.0V
20
20
4.0V
10
4.0V
10
V
GS
=3.0V
V
GS
=3.0V
0
0
2
4
6
0
0
2
4
6
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
1.8
I
D
=5A
T
A
=25
℃
100
I
D
=5A
V
GS
=10V
1.6
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
1.4
80
1.2
60
1
40
0.8
20
2
4
6
8
10
12
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
10
2
1
V
GS(th)
(V)
1.6
Tj=150
o
C
I
S
(A)
Tj=25
o
C
1.5
1
0.1
0
0.4
0.8
1.2
0.5
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9936GM-HF
f=1.0MHz
12
1000
V
GS
, Gate to Source Voltage (V)
10
8
C (pF)
Ciss
Coss
100
6
4
Crss
2
0
0
2
4
6
8
10
12
10
1
8
15
22
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig7. Gate Charge Characteristics
Fig 8 . Typical Capacitance Characteristics
100
1
Duty Factor = 0.5
Normalized Thermal Response (R
thja
)
0.2
10
0.1
0.1
I
D
(A)
0.05
1
1ms
10ms
0.02
0.01
P
DM
t
T
Duty Factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
Rthja=135
o
C/W
0.01
Single Pulse
0.1
100ms
T
A
=25
o
C
Single Pulse
1s
DC
1
10
100
0.01
0.001
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
V
DS
90%
t
d(on)
V
G
Q
G
5V
Q
GS
Q
GD
10%
V
GS
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP9936GM-HF
MARKING INFORMATION
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
9936GM
YWWSSS
5
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