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APA2010QBI-TRL

Audio Amplifier, 3W, 1 Channel(s), 1 Func, CMOS, PDSO8, 3 X 3 MM, ROHS COMPLIANT, TDFN-8

器件类别:模拟混合信号IC    消费电路   

厂商名称:American Power Devices Inc

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
American Power Devices Inc
零件包装代码
DFN
包装说明
HVSON,
针数
8
Reach Compliance Code
compliant
ECCN代码
EAR99
商用集成电路类型
AUDIO AMPLIFIER
JESD-30 代码
S-PDSO-N8
JESD-609代码
e3
长度
3 mm
信道数量
1
功能数量
1
端子数量
8
最高工作温度
85 °C
最低工作温度
-40 °C
标称输出功率
3 W
封装主体材料
PLASTIC/EPOXY
封装代码
HVSON
封装形状
SQUARE
封装形式
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
座面最大高度
0.85 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
2.4 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子面层
Matte Tin (Sn)
端子形式
NO LEAD
端子节距
0.65 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
40
宽度
3 mm
文档预览
APA2010/2010A
3W Mono Class-D Audio Power Amplifier
Features
Operating Voltage: 2.4V-5.5V
High efficiency up to 90%
Low Supply Current
– I
DD
=2mA at V
DD
=5V
– I
DD
=1.6mA at V
DD
=3.6V
Low Shutdown Current
– I
DD
=1µA at V
DD
=5V
Output Power
at 1% THD+N (TDFN3x3-8)
– 1.3W, at V
DD
=5V, R
L
=8Ω
– 0.6W, at V
DD
=3.6V, R
L
=8Ω
– 2.4W, at V
DD
=5V, R
L
=4Ω (WLCSP-9)
– 2.1W, at V
DD
=5V, R
L
=4Ω
– 1.2W, at V
DD
=3.6V, R
L
=4Ω
at 10% THD+N (TDFN3x3-8)
– 1.6W, at V
DD
=5V, R
L
=8Ω
– 0.8W, at V
DD
=3.6V, R
L
=8Ω
– 3.1W, at V
DD
=5V, R
L
=4Ω (WLCSP-9)
– 2.65W, at V
DD
=5V, R
L
=4Ω
– 1.3W, at V
DD
=3.6V, R
L
=4Ω
Less External Components Required
Fast Startup Time (4 ms)
High PSRR: 80 dB at 217 Hz
Thermal and Over-Current Protections
Space Saving Packages
WLCSP-9 Bump, 3mmx3mm TDFN-8
Lead Free Available (RoHS Compliant)
General Description
The APA2010/2010A is a mono, filter-free Class-D audio
amplifier available in a WLCSP-9 and TDFN3x3-8
packages. The gain can be set by an external input
resistance. High PSRR and differential architecture pro-
vide increased immunity to noise and RF rectification. In
addition to these features, a fast startup time and small
package size make the APA2010/2010A an ideal choice
for both cellular handsets and PDAs.
The APA2010/2010A is capable of driving 1.5W at 5V or
730mW at 3.6V into 8Ω. It is also capable of driving 4Ω.
The APA2010/2010A is designed with a Class-D archi-
tecture and operating with highly efficiency compared
with Class-AB amplifier. It's suitable for power sensitive
application, such as battery powered devices. The filter-
free architecture eliminates the output filter, reduces the
external component count, board area, and system costs,
and simplifies the design.
Moreover, the APA2010/2010A provides thermal and over-
current protections.
Applications
Mobile Phones
Handsets
PDAs
Portable multimedia devices
Ordering and Marking Information
APA2010
APA2010A
Lead Free Code
Handling Code
Temperature Range
Package Code
APA2010 HA:
APA2010 QB:
A20
Package Code
HA: WLCSP-9 QB : TDFN3x3-8
Operating Ambient Temperature Range
I : -40 to 85
°
C
Handling Code
TR : Tape & Reel
Lead Free Code
L : Lead Free Device
A21
X
APA
2010
XXXXX
APA2010A HA:
APA2010A QB:
X
APA
2010A
XXXXX
X - Date Code
XXXXX - Date Code
Note 1: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination
finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering operations. ANPEC lead-
free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak
reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
©
ANPEC Electronics Corp.
Rev. A.5 - Mar., 2008
1
www.anpec.com.tw
APA2010/2010A
Pin Configurations
(Note 2)
VON
(A3)
GND
(A2)
INP
(A1)
PGND
(B3)
VOP
(C3)
SD
(C2)
INN
(C1)
PVDD
(B2)
A20
X
Marking
Date
Code
SD 1
NC 2
TDFN-8
8 VON
7 GND
6 VDD
5 VOP
INP 3
INN 4
VDD
(B1)
PIN A1
WLCSP-9
Top View
Top View
Note 2: The marking for APA2010 is "A20" and "A21" is for APA2010A
Absolute Maximum Ratings
(Note 3)
(Over operating free-air temperature range unless otherwise noted.)
Symbol
V
DD
V
IN
, V
SD
T
A
T
J
T
STG
T
SDR
P
D
Parameter
Supply Voltage (VDD, PVDD)
Input Voltage (SD, INP, INN)
Operating Ambient Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Maximum Lead Soldering Temperature, 10 Seconds
Power Dissipation
Rating
-0.3 to 6
-0.3 to 6
-40 to 85
150
-65 to +150
260
Internally Limited
Unit
V
V
ο
ο
C
C
C
C
ο
ο
W
Notes 3: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
Thermal Characteristics
Symbol
θ
JA
(Note 4)
Parameter
Value
WLCSP-9
TDFN3x3-8
(Note 2)
165
50
Unit
ο
Thermal Resistance -Junction to Ambient
C /W
Note 4 : Please refer to “ Layout Recommendation”, the ThermalPad on the bottom of the IC should soldered directly to the PCB's ThermalPad area that
with several thermal vias connect to the ground plan, and the PCB is a 2-layer, 5-inch square area with 2oz copper thickness.
Recommended Operating Conditions
Min.
Supply Voltage V
DD
High level threshold voltage, V
IH
Low level threshold voltage, V
IL
SD
SD
2.4
1
0.35
Max.
5.5
Unit
V
V
V
Copyright
©
ANPEC Electronics Corp.
Rev. A.5 - Mar., 2008
2
www.anpec.com.tw
APA2010/2010A
Electrical Characteristics
V
DD
=5V, GND=0V, T
A
= 25
ο
C (unless otherwise noted)
Symbol
I
DD
I
SD
I
i
F
osc
Parameter
Supply Current
Shutdown Current
Input current
Oscillator Frequency
P-Channel MOSFET
(WLCSP-9)
N-Channel MOSFET
(WLCSP-9)
P-Channel MOSFET
(WLCSP-9)
N-Channel MOSFET
(WLCSP-9)
P-Channel MOSFET
(WLCSP-9)
N-Channel MOSFET
(WLCSP-9)
SD = 0V
SD
200
Test Condition
APA2010/2010A
Min.
Typ.
2
1
0.1
250
340
195
400
215
550
260
mΩ
300
Max.
Unit
mA
µA
µA
kHz
V
DD
= 5V
R
DSCON
Static drain-source on-state
resistance
V
DD
= 3.6V
V
DD
= 2.4V
V
DD
=5V, T
A
=25°
C
R
L
= 4Ω
THD+N = 1%,
f
in
= 1kHz
P
O
Output Power
THD+N = 10%,
f
in
= 1kHz
(WLCSP-9)
R
L
= 4Ω
R
L
= 8Ω
R
L
= 4Ω
(WLCSP-9)
R
L
= 4Ω
R
L
= 8Ω
Total Harmonic Distortion
Pulse Noise
Power Supply Rejection Ratio
Output Offset Voltage
R
L
= 4Ω
P
O
= 1.6W
R
L
= 8Ω
P
O
= 0.96W
1
2.45
2.1
1.3
3.1
2.65
1.6
0.3
%
0.1
80
25
90
100
dB
mV
dB
µV
(rms)
W
THD+N
f
in
= 1kHz
PSRR
V
OS
S/N
Vn
R
L
= 8Ω, f
in
= 217Hz
R
L
= 8Ω
With A-weighting Filter
P
O
= 0.96W, R
L
= 8Ω
Noise Output Voltage
With A-weighting Filter
Copyright
©
ANPEC Electronics Corp.
Rev. A.5 - Mar., 2008
3
www.anpec.com.tw
APA2010/2010A
Electrical Characteristics (Cont.)
V
DD
=5V, GND=0V, T
A
= 25
ο
C (unless otherwise noted)
APA2010/2010A
Min.
Typ.
Max.
Symbol
V
DD
=3.6V, T
A
=25°
C
Parameter
Test Condition
Unit
R
L
= 4Ω
THD+N = 1%,
f
in
= 1kHz
P
O
Output Power
THD+N =
10%,
f
in
= 1kHz
(WLCSP-9)
R
L
= 4Ω
R
L
= 8Ω
R
L
= 4Ω
(WLCSP-9)
R
L
= 4Ω
R
L
= 8Ω
R
L
= 4Ω
P
O
= 0.82W,
R
L
= 8Ω
P
O
= 0.45W
1.2
1.1
0.6
1.5
1.35
0.8
W
THD+N
Total Harmonic Distortion Pulse
Noise
Power Supply Rejection Ratio
Output Offset Voltage
0.35
%
0.1
75
25
85
105
dB
mV
dB
µV
(rms)
f
in
= 1kHz
PSRR
V
OS
S/N
Vn
R
L
= 8Ω, f
in
= 217Hz
R
L
= 8Ω
With A-weighting Filter
P
O
= 0.43W, R
L
= 8Ω,
Noise Output Voltage
With A-weighting Filter
V
DD
=2.5V, T
A
=25°
C
THD+N = 1%,
f
in
= 1kHz
P
O
Output Power
THD+N =10%,
f
in
= 1kHz
R
L
= 4Ω
R
L
= 8Ω
P
O
= 0.34W,
R
L
= 4Ω
P
O
= 0.22W,
R
L
= 8Ω
R
L
= 4Ω
R
L
= 8Ω
0.45
0.3
0.55
0.35
0.35
%
0.2
70
25
83
120
dB
mV
dB
µV
(rms)
W
THD+N
Total Harmonic Distortion
Pulse Noise
Power Supply Rejection Ratio
Output Offset Voltage
f
in
= 1kHz
PSRR
V
OS
S/N
Vn
R
L
= 8Ω, f
in
= 217Hz
R
L
= 8Ω
With A-weighting Filter
P
O
= 0.2W, R
L
= 8Ω
Noise Output Voltage
With A-weighting Filter
Copyright
©
ANPEC Electronics Corp.
Rev. A.5 - Mar., 2008
4
www.anpec.com.tw
APA2010/2010A
Typical Operating Characteristics
Efficiency vs. Output Power
100
90
80
70
V
DD
=3.6V
V
DD
=2.4V
V
DD
=5V
90
80
70
V
DD
=5V
Efficiency vs. Output Power (4Ω)
Efficiency (%)
60
50
40
30
20
10
0
0
Efficiency (%)
60
50
40
30
20
10
V
DD
=2.4V
V
DD
=3.6V
R
L
=8Ω&33µH
f
in
=1kHz
C
in
=0.47µF
R
in
=150kΩ
AUX-0025
AES-17 (20kHz)
0.2
0.4
0.6
0.8
1.0
1.2
0
R
L
=4Ω&33µH
f
in
=1kHz
C
in
=0.47µF
R
in
=150kΩ
AUX-0025
AES-17 (20kHz)
0
0.4
0.8
1.2
1.6
2.0
Output Power (W)
Output Power (W)
Output Power vs. Load Resistance
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
V
DD
=2.4V
V
DD
=5V,WLCSP-9
V
DD
=5V
Output Power vs. Load Resistance
2.5
V
DD
=5V,WLCSP-9
Output Power (W)
V
DD
=3.6V,WLCSP-9
Output Power (W)
THD+N=10%
f
in
=1kHz
C
in
=0.22µF
R
in
=150kΩ
AUX-0025
AES-17(20kHz)
2
V
DD
=5V
THD+N=1%
f
in
=1kHz
C
in
=0.22µF
R
in
=150kΩ
AUX-0025
AES-17(20kHz)
1.5
V
DD
=3.6V,WLCSP-9
V
DD
=2.4V,WLCSP-9
V
DD
=2.4V,WLCSP-9
V
DD
=3.6V
1
V
DD
=3.6V
0.5
V
DD
=2.4V
4
8
12
16
20
24
28
32
0
4
8
12
16
20
24
28
32
Load Resistance (Ω)
Output Power vs. Supply Voltage
3.2
Load Resistance (Ω)
THD+N vs. Output Power
10
Output Power (W)
f
in
=1kHz
C
in
=0.22µF
2.8
R
in
=150kΩ
AUX-0025
2.4
AES-17(20kHz)
2
1.6
R
L
=8Ω, THD+N=10%
R
L
=4Ω,WLCSP-9,
THD+N=10%
R
L
=4Ω,WLCSP-9,
THD+N=1%
V
DD
=2.4V
V
DD
=3.6V
R
L
=4Ω, THD+N=1%
THD+N (%)
R
L
=4Ω, THD+N=10%
1
V
DD
=5V
1.2
R
L
=8Ω,WLCSP-9,
THD+N=10%
R
L
=8Ω, THD+N=1%
R
L
=8Ω,WLCSP-9,
THD+N=1%
0.1
0.8
0.4
0
2.4
0.01
f
in
=1kHz
C
in
=0.22µF
R
in
=150kΩ
R
L
=4Ω
AUX-0025
AES-17(20kHz)
WLCSP-9
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
2.8
Supply Voltage (Volt)
3.2
3.6
4
4.4
4.8
5
Output Power (W)
Copyright
©
ANPEC Electronics Corp.
Rev. A.5 - Mar., 2008
5
www.anpec.com.tw
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参数对比
与APA2010QBI-TRL相近的元器件有:APA2010AHAI-TRL、APA2010AQBI-TRL、APA2010HAI-TRL。描述及对比如下:
型号 APA2010QBI-TRL APA2010AHAI-TRL APA2010AQBI-TRL APA2010HAI-TRL
描述 Audio Amplifier, 3W, 1 Channel(s), 1 Func, CMOS, PDSO8, 3 X 3 MM, ROHS COMPLIANT, TDFN-8 Audio Amplifier, 3W, 1 Channel(s), 1 Func, CMOS, PBGA9, 1.50 X 1.50 MM, ROHS COMPLIANT, WLCSP-9 Audio Amplifier, 3W, 1 Channel(s), 1 Func, CMOS, PDSO8, 3 X 3 MM, ROHS COMPLIANT, TDFN-8 Audio Amplifier, 3W, 1 Channel(s), 1 Func, CMOS, PBGA9, 1.50 X 1.50 MM, ROHS COMPLIANT, WLCSP-9
是否无铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合
厂商名称 American Power Devices Inc American Power Devices Inc American Power Devices Inc American Power Devices Inc
零件包装代码 DFN BGA DFN BGA
包装说明 HVSON, VFBGA, HVSON, VFBGA,
针数 8 9 8 9
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
商用集成电路类型 AUDIO AMPLIFIER AUDIO AMPLIFIER AUDIO AMPLIFIER AUDIO AMPLIFIER
JESD-30 代码 S-PDSO-N8 S-PBGA-B9 S-PDSO-N8 S-PBGA-B9
JESD-609代码 e3 e3 e3 e3
长度 3 mm 1.5 mm 3 mm 1.5 mm
信道数量 1 1 1 1
功能数量 1 1 1 1
端子数量 8 9 8 9
最高工作温度 85 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C
标称输出功率 3 W 3 W 3 W 3 W
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 HVSON VFBGA HVSON VFBGA
封装形状 SQUARE SQUARE SQUARE SQUARE
封装形式 SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE GRID ARRAY, VERY THIN PROFILE, FINE PITCH SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度) 260 260 260 260
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 0.85 mm 0.67 mm 0.85 mm 0.67 mm
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 2.4 V 2.4 V 2.4 V 2.4 V
表面贴装 YES YES YES YES
技术 CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
端子形式 NO LEAD BALL NO LEAD BALL
端子节距 0.65 mm 0.5 mm 0.65 mm 0.5 mm
端子位置 DUAL BOTTOM DUAL BOTTOM
处于峰值回流温度下的最长时间 40 40 40 40
宽度 3 mm 1.5 mm 3 mm 1.5 mm
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