APM2030ND
N-Channel Enhancement Mode MOSFET
Features
•
20V/6A ,
R
DS(ON)
=28mΩ(typ.) @ V
GS
=4.5V
R
DS(ON)
=38mΩ(typ.) @ V
GS
=2.5V
Pin Description
G
D
S
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Top View of SOT-89
(2)
D
Applications
•
•
Switching Regulators
Switching Converters
(1)
G
S
(3)
N-Channel MOSFET
Ordering and Marking Information
A PM 2030N
L e a d F re e C o d e
H a n d lin g C o d e
T em p. R ange
P ackage C ode
P ackage C ode
D : S O T -8 9
O p e ra tin g J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 °C
H a n d lin g C o d e
TU : Tube
TR : Tape & Reel
L e a d F re e C o d e
L : L e a d F re e D e v ic e B la n k : O rig in a l D e v ic e
A PM 2030N D :
APM 2030
XXXXX
X X X X X - D a te C o d e
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1
www.anpec.com.tw
APM2030ND
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise noted)
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θJA
*
Note:
*Surface Mounted on 1in
pad area, t
≤
10sec.
2
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Power Dissipation for Single Operation
Thermal Resistance-Junction to Ambient
T
A
=25°C
T
A
=100°C
V
GS
=4.5V
Rating
20
±12
6
24
2.3
150
-55 to 150
1.47
0.58
85
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics
Symbol
Parameter
(T
A
= 25°C unless otherwise noted)
APM2030ND
Min.
Typ.
Max.
Test Condition
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
SD
a
a
V
GS
=0V, I
DS
=250µA
V
DS
=18V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±12V, V
DS
=0V
V
GS
=4.5V, I
DS
=6A
V
GS
=2.5V, I
DS
=2A
I
SD
=1.5A, V
GS
=0V
20
1
30
0.5
0.7
28
38
0.7
1
±100
32
45
1.3
V
µA
V
nA
mΩ
V
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Diode Forward Voltage
b
Gate Charge Characteristics
Q
g
Total Gate Charge
Q
gs
Q
gd
Gate-Drain Charge
9
V
DS
=10V, V
GS
=4.5V,
I
DS
=6A
3.6
1
11
nC
Gate-Source Charge
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
2
www.anpec.com.tw
APM2030ND
Electrical Characteristics (Cont.)
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
b
Test Condition
APM2030ND
Min.
Typ.
Max.
Unit
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Notes:
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
2
520
110
70
17
32
29
56
32
15
45
25
Ω
pF
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=10V, R
L
=10Ω,
I
DS
=1A, V
GEN
=4.5V,
R
G
=6Ω
ns
a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
3
www.anpec.com.tw
APM2030ND
Typical Characteristics
Power Dissipation
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T
A
=25 C
0
20
40
60
80 100 120 140 160
o
Drain Current
7
6
5
4
3
2
1
0
0
T
A
=25 C,V
G
=4.5V
20
40
60
80 100 120 140 160
o
T
j
- Junction Temperature (°C)
I
D
- Drain Current (A)
P
tot
- Power (W)
T
j
- Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
50
im
it
Thermal Transient Impedance
2
1
Duty = 0.5
0.2
0.1
I
D
- Drain Current (A)
R
ds
10
(o
n)
L
100
µ
s
300
µ
s
1ms
0.1
0.02
0.01
0.05
1
10ms
100ms
1s
0.1
0.01
Single Pulse
DC
0.01
T
C
=25 C
0.1
1
10
80
o
1E-3
1E-4 1E-3 0.01
Mounted on 1in pad
o
R
θ
JA
: 85 C/W
2
0.1
1
10
100
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
4
www.anpec.com.tw
APM2030ND
Typical Characteristics (Cont.)
Output Characteristics
20
V
GS
=4,5,6,7,8,9,10V
18
16
3V
70
80
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mΩ)
60
50
40
30
20
10
0
I
D
- Drain Current (A)
14
12
10
8
6
4
1.5V
2
0
0
1
2
3
4
5
2V
V
GS
=2.5V
V
GS
=4.5V
0
4
8
12
16
20
24
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
Transfer Characteristics
24
21
1.6
Gate Threshold Voltage
I
DS
=250
µ
A
Normalized Threshold Vlotage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
I
D
- Drain Current (A)
18
15
12
9
6
3
0
T
j
=125 C
T
j
=25 C
o
o
T
j
=-55 C
o
0
1
2
3
4
0
25
50
75
100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
5
www.anpec.com.tw
