APM2055N
N-Channel Enhancement Mode MOSFET
Features
•
20V/12A, R
DS(ON)
=55mΩ(typ.) @ V
GS
=10V
R
DS(ON)
=75mΩ(typ.) @ V
GS
=4.5V
R
DS(ON)
=140mΩ(typ.) @ V
GS
=2.5V
Pin Description
•
•
•
Super High Dense Cell Design
High Power and Current Handling Capability
TO-252 and SOT-223 Packages
1
2
3
1
2
3
G
D
S
G
D
S
Top View of TO-252
D
Top View of SOT-223
Applications
•
•
Switching Regulators
Switching Converters
G
Ordering and Marking Information
A P M 2 055 N
H a n d lin g C o d e
Tem p. R ange
Package C ode
S
N-Channel MOSFET
Package C ode
U : T O -2 5 2
V : S O T -2 2 3
O p e ra tio n J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0
°
C
H a n d lin g C o d e
TR : Tape & R eel
AP M 2055N U :
AP M 2055N
XXXXX
XXXXX
- D a te C o d e
AP M 2055N V :
AP M 2055N
XXXXX
XXXXX
- D a te C o d e
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
I
DM
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
20
±16
12
20
A
V
Unit
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
1
www.anpec.com.tw
APM2055N
Absolute Maximum Ratings (Cont.)
Symbol
Parameter
T
A
=25
°
C
P
D
Maximum Power Dissipation
T
A
=100
°
C
T
J
T
STG
R
θjA
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance – Junction to Ambient
TO-252
SOT-223
TO-252
SOT-223
(T
A
= 25°C unless otherwise noted)
Rating
50
3
10
1.2
150
-55 to 150
50
°
C
°
C
°
C/W
W
Unit
Electrical Characteristics
Symbol
Static
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
Parameter
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
(T
A
= 25°C unless otherwise noted)
APM2055N
Min.
Typ.
Max.
20
1
0.7
0.9
1.5
±100
55
75
140
0.7
70
90
160
1.3
V
mΩ
Test Condition
V
GS
=0V, I
D
=250µA
V
DS
=16V, V
GS
=0V
V
DS
=V
GS
, I
D
=250
µ
A
V
GS
=±16V, V
DS
=0V
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=6A
V
GS
=2.5V, I
D
=2A
Unit
V
µA
V
nA
V
SD
Dynamic
Q
g
Q
gs
Q
gd
t
d(ON)
t
r
t
d(OFF)
t
f
Diode Forward Voltage
I
S
=2A, V
GS
=0V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DS
=15V, V
GS
=4.5V,
I
D
=1.5A
7
2.5
1.5
8.5
nC
V
DD
=15V, I
D
=2A,
V
GS
=10V, R
G
=6Ω
9.2
14
31
16
18.6
27
58
21
ns
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
2
www.anpec.com.tw
APM2055N
Typical Characteristics
Output Characteristics
20
V
GS
=4,5,6,7,8,9,10V
Transfer Characteristics
20
I
D
-Drain Current (A)
V
GS
=3V
12
I
D-
Drain Current (A)
16
16
12
8
8
T
J
=125°C
4
V
GS
=2V
4
T
J
=25°C
T
J
=-55°C
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
I
DS
=250uA
On-Resistance vs. Drain Current
0.125
V
GS(th)-
Threshold Voltage (V)
(Normalized)
1.25
1.00
0.75
0.50
0.25
0.00
-50
R
DS(ON)
-On-Resistance (Ω)
0.100
V
GS
=4.5V
0.075
V
GS
=10V
0.050
0.025
0.000
-25
0
25
50
75
100 125 150
0
2
4
6
8
10 12 14 16 18 20
Tj - Junction Temperature (°C)
I
D
- Drain Current (A)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
3
www.anpec.com.tw
APM2055N
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.200
I
D
=5A
On-Resistance vs. Junction Temperature
2.25
V
GS
=4.5V
2.00
I
D
=5A
R
DS(ON)
-On-Resistance (Ω)
0.175
0.150
0.125
0.100
0.075
0.050
0.025
R
DS(ON)
-On-Resistance (Ω)
(Normalized)
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
1
2
3
4
5
6
7
8
0.00
-50
-25
0
25
50
75
100 125 150
V
GS
- Gate-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
Gate Charge
5
V
DS
=15V
I
D
=1.5A
Capacitance
600
500
Frequency=1MHz
V
GS
-Gate-Source Voltage (V)
4
Capacitance (pF)
400
300
200
Ciss
3
2
1
Coss
100
0
Crss
0
0
1
2
3
4
5
6
7
8
0
5
10
15
20
Q
G
- Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
4
www.anpec.com.tw
APM2055N
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
20
10
250
Single Pulse Power
I
S
-Source Current (A)
200
Power (W)
1.2
1.4
1.6
150
1
T
J
=150°C
T
J
=25°C
100
50
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
1E-3
0.01
0.1
1
10
100
V
SD
-Source-to-Drain Voltage (V)
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle=0.5
D=0.2
D=0.1
D=0.05
0.1
D=0.02
D=0.01
SINGLE PULSE
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R
thJA
=50°C/W
3.T
JM
-T
A
=P
DM
Z
thJA
0.01
1E-4
1E-3
0.01
0.1
1
10
100
Square Wave Pulse Duration (sec)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Feb., 2003
5
www.anpec.com.tw
