APM9904K
Dual N-Channel Enhancement Mode MOSFET
Features
•
30V/8A,
R
DS(ON)
=20mΩ(typ.) @ V
GS
= 10V
R
DS(ON)
=25mΩ(typ.) @ V
GS
= 4.5V
Pin Description
D1
D1
D2
D2
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
S1
G1
S2
G2
SOP
−
8
(7) (8)
D1 D1
(5) (6)
D2 D2
Applications
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
(2)
G1
(4)
G2
S1
(1)
S2
(3)
N-Channel MOSFET
Ordering and Marking Information
APM9904
Lead Free Code
Handling Code
Tem p. Range
Package Code
Package Code
K : SOP-8
Operating Junction Tem p. Range
C : -55 to 150°C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
APM9904 K :
APM9904
XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
1
www.anpec.com.tw
APM9904K
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θJA
*
Note:
*Surface Mounted on 1in
pad area, t
≤
10sec.
2
(T
A
= 25°C unless otherwise noted)
Rating
30
±16
8
V
GS
=10V
30
4
150
-55 to 150
T
A
=25°C
T
A
=100°C
2
0.8
62.5
W
°C/W
V
A
A
°C
Unit
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continue Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Electrical Characteristics
Symbol
Parameter
(T
A
= 25°C unless otherwise noted)
APM9904K
Min.
30
1
30
0.8
1
20
25
0.8
1.6
±100
26
32
1.3
Typ.
Max.
Test Condition
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
SD
a
a
V
GS
=0V, I
DS
=250µA
V
DS
=24V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±16V, V
DS
=0V
V
GS
=10V, I
DS
=8A
V
GS
=4.5V, I
DS
=5.6A
I
SD
=4A, V
GS
=0V
V
µA
V
nA
mΩ
V
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
Diode Forward Voltage
b
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
C
rss
R
G
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
V
GS
=0V, V
DS
=0V, f=1MHz
790
130
80
2
Ω
pF
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
2
www.anpec.com.tw
APM9904K
Electrical Characteristics(Cont.)
Symbol
Parameter
b
(T
A
= 25°C unless otherwise noted)
APM9904K
Min.
Typ.
3
Max.
6
28
44
33
ns
Test Condition
Unit
Dynamic Characteristics
t
d(ON)
Turn-on Delay Time
T
r
t
d(OFF)
T
f
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
b
V
DD
=15V, R
L
=15Ω,
I
DS
=1A, V
GEN
=10V,
R
G
=6Ω
15
24
18
Gate Charge Characteristics
Q
g
Total Gate Charge
Q
gs
Q
gd
Notes:
15.5
V
DS
=15V, V
GS
=10V,
I
DS
=8A
1.8
2.2
20
nC
Gate-Source Charge
Gate-Drain Charge
a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
3
www.anpec.com.tw
APM9904K
Typical Characteristics
Power Dissipation
2.5
10
Drain Current
2.0
8
I
D
- Drain Current (A)
P
tot
- Power (W)
1.5
6
1.0
4
0.5
o
2
o
T
A
=25 C
0.0
0
0
20
40
60
80 100 120 140 160
T
A
=25 C,V
G
=10V
0
20
40
60
80
100 120 140 160
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistence
100
2
1
Thermal Transient Impedance
I
D
- Drain Current (A)
Rd
s
10
(o
n)
L
im
Duty = 0.5
0.2
0.1
it
300
µ
s
1ms
0.1
0.05
0.02
0.01
1
10ms
100ms
0.1
1s
DC
0.01
Single Pulse
0.01
0.01
T
A
=25 C
o
0.1
1
10
100
1E-3
1E-4
Mounted on 1in pad
o
R
θ
JA
: 62.5 C/W
2
1E-3
0.01
0.1
1
10 30
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
4
www.anpec.com.tw
APM9904K
Typical Characteristics (Cont.)
Output Characteristics
30
V
GS
= 4,5,6,7,8,9,10V
3V
Drain-Source On Resistance
36
R
DS(ON)
- On - Resistance (mΩ)
25
32
I
D
- Drain Current (A)
20
28
V
GS
=4.5V
15
2.5V
24
V
GS
=10V
20
10
16
5
2V
0
0
1
2
3
4
5
12
0
5
10
15
20
25
30
V
DS
- Drain-Source Voltage (V)
I
D
- Drain Current (A)
Transfer Characteristics
30
Gate Threshold Voltage
1.4
I
DS
=250
µ
A
Normalized Threshold Voltage
25
1.2
I
D
- Drain Current (A)
20
1.0
15
T
j
=125 C
10
T
j
=25 C
o
o
0.8
T
j
=-55 C
o
5
0.6
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.4
-50 -25
0
25
50
75
100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
ANPEC Electronics Corp.
Rev. B.2 - Mar., 2005
5
www.anpec.com.tw
