APM9935
Dual P-Channel Enhancement Mode MOSFET
Features
•
•
•
•
-20V/-6A, R
DS(ON)
=45mΩ(max.) @ V
GS
=-4.5V
R
DS(ON)
=65mΩ(max.) @ V
GS
=-2.5V
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
SO-8 Package
Pin Description
5
/
5
/
!
"
&
%
$
#
,
,
,
,
SO
−
8
5
5
Applications
•
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
/
/
,
,
,
,
Ordering and Marking Information
APM9935
Lead Free Code
Handling Code
Temp. Range
Package Code
APM9935
XXXXX
P-Channel MOSFET
Package Code
K : SO-8
Operation Junction Temp. Range
C : -55 to 150
°
C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device
Blank : Orginal Device
XXXXX - Date Code
APM9935K :
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
(T
A
= 25°C unless otherwise noted)
Rating
-20
±12
-6
-10
Unit
V
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current Continuous
Maximum Drain Current Pulsed
I
DM
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
1
www.anpec.com.tw
APM9935
Absolute Maximum Ratings (Cont.)
Symbol
P
D
T
J
T
STG
R
θJA
*
(T
A
= 25°C unless otherwise noted)
Rating
Unit
W
°C
°C
°C/W
Parameter
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance Junction to Ambient
T
A
=25°C
T
A
=100°C
2.5
1.0
150
-55 to 150
50
* Surface Mounted on FR4 Board, t
≤
10 sec.
Electrical Characteristics
Sym bol
Static
BV
DSS
I
DSS
V
G S(th)
I
G SS
R
DS(O N)
V
SD
Dynam ic
Q
g
Q
gs
Q
gd
t
d(O N)
T
r
t
d(O FF)
T
f
C
iss
C
oss
C
rss
>
=
=
(T
A
= 25°C unless otherwise noted)
APM 9935
M in. Typ. M ax.
-20
-1
-0.5
-0.7
-1
±100
45
65
-0.7
17
4.1
1.6
23
45
45
32
V
G S
=0V , V
DS
=-15V
Frequency=1.0M H z
1242
341
217
pF
45
80
90
55
ns
-1.3
22
nC
Param eter
Test Condition
Unit
D rain-Source Breakdown Voltage
Zero G ate Voltage D rain C urrent
G ate T hreshold Voltage
G ate Leakage C urrent
D rain-Source O n-state R esistance
D iode Forward Voltage
Total G ate C harge
G ate-Source C harge
G ate-D rain C harge
Turn-on D elay Tim e
Turn-on R ise Tim e
Turn-off D elay Tim e
Turn-off Fall Tim e
Input C apacitance
O utput C apacitance
R everse Transfer C apacitance
V
G S
=0V , I
DS
=-250µA
V
DS
=-16V , V
G S
=0V
V
DS
=V
G S
, I
DS
=-250µA
V
G S
=±12V , V
DS
=0V
V
G S
=-4.5V , I
DS
=-6A
V
G S
=-2.5V , I
DS
=-5A
I
S
=-2A , V
G S
=0V
V
ìA
V
nA
m
Ω
V
V
DS
=-4V , I
DS
=-6A
V
G S
=-4.5V
V
DD
=-4V , I
DS
=-6A ,
V
G EN
=-4.5V , R
G
=10Ω
Notes
a
: Pulse test ; pulse width
≤300µs,
duty cycle
≤
2%
b
: Guaranteed by design, not subject to production testing
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
2
www.anpec.com.tw
APM9935
Typical Characteristics
Output Characteristics
10
8
Transfer Characteristics
10
-V
GS
=3,4,5,6,7,8,9,10V
-I
D
-Drain Current (A)
-I
D-
Drain Current (A)
8
6
-V
GS
=2V
6
4
4
T
J
=125°C
2
0
2
T
J
=25°C
T
J
=-55°C
0
1
2
3
4
5
6
7
8
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-V
DS
- Drain-to-Source Voltage (V)
-V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
-I
DS
=250uA
On-Resistance vs. Drain Current
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
-V
GS
=4.5V
-V
GS
=2.5V
-V
GS(th)-
Threshold Voltage (V)
(Normalized)
1.25
1.00
0.75
0.50
0.25
0.00
-50
-25
0
25
50
75
100 125 150
R
DS(ON)
-On-Resistance (Ω)
0.00
Tj - Junction Temperature (°C)
0
1
2
3
4
5
6
7
8
9
10
-I
D
- Drain Current (A)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
3
www.anpec.com.tw
APM9935
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
0.12
On-Resistance vs. Junction Temperature
1.8
-I
D
=6A
R
DS(ON)
-On-Resistance (Ω)
0.10
0.08
0.06
0.04
0.02
0.00
R
DS(ON)
-On-Resistance (Ω)
(Normalized)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-V
GS
=4.5V
-I
D
=6A
1
2
3
4
5
6
7
8
9
10
-25
0
25
50
75
100
125
150
-V
GS
- Gate-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
Gate Charge
5
Capacitance
2000
-V
GS
-Gate-Source Voltage (V)
-V
DS
=4V
-I
D
=6A
Frequency=1MHz
4
1600
3
Capacitance (pF)
Ciss
1200
2
800
Coss
Crss
1
400
0
0
4
8
12
16
20
0
0
4
8
12
16
20
Q
G
-Total Gate Charge (nC)
-V
DS
- Drain-to-Source Voltage (V)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
4
www.anpec.com.tw
APM9935
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
10
Single Pulse Power
80
-I
S
-Source Current (A)
60
T
J
=150°C
T
J
=25°C
Power (W)
1
0.1
20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0.01
0.1
1
10
30
-V
SD
-Source-to-Drain Voltage (V)
Time
(sec)
Normalized Thermal Transient Impedence, Junction to Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R
thJA
=50°C/W
3.T
JM
-T
A
=P
DM
Z
thJA
4.Surface Mounted
D=0.02
SINGLE PULSE
0.01
1E-4
1E-3
0.01
0.1
1
10
30
Square Wave Pulse Duration (sec)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Aug., 2003
5
www.anpec.com.tw
40
