Outstanding performance at high frequency operation
Low losses
Low noise switching
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
~
Absolute maximum ratings
Symbol
V
R
V
RRM
I
F(AV)
I
FSM
Parameter
Maximum DC reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Average Forward Current
Duty cycle = 50%
Non-Repetitive Forward Surge Current
10 µs
Max ratings
600
T
C
= 100°C
T
C
= 25°C
30
370
Unit
V
A
APT30DC60HJ – Rev 0 November, 2009
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
1-3
APT30DC60HJ
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
V
F
I
RM
Q
C
C
Diode Forward Voltage
Maximum Reverse Leakage Current
Total Capacitive Charge
Total Capacitance
Test Conditions
I
F
= 30A
T
j
= 25°C
T
j
= 175°C
T
j
= 25°C
V
R
= 600V
T
j
= 175°C
I
F
= 30A, V
R
= 300V
di/dt =1000A/µs
f = 1MHz, V
R
= 200V
f = 1MHz, V
R
= 400V
Min
Typ
1.6
2
150
300
42
195
150
Max
1.8
2.4
600
3000
Unit
V
µA
nC
pF
Thermal and package characteristics
Symbol
R
thJC
R
thJA
V
ISOL
T
J
,T
STG
T
L
Torque
Wt
Characteristic
Junction to Case Thermal resistance
Junction to Ambient
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min
Typ
Max
0.9
20
175
300
1.5
Unit
°C/W
V
°C
N.m
g
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque
(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
2500
-55
29.2
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
0.75 (.030)
0.85 (.033)
25.2 (0.992)
25.4 (1.000)
3.30 (.130) 12.6 (.496)
4.57 (.180) 12.8 (.504)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
1.95 (.077)
2.14 (.084)
APT30DC60HJ – Rev 0 November, 2009
Dimensions in Millimeters and (Inches)
www.microsemi.com
2-3
APT30DC60HJ
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
Thermal Impedance (°C/W)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.05
0.0001
0.001
Single Pulse
0.01
0.1
1
10
0
0.00001
Rectangular Pulse Duration (Seconds)
Forward Characteristics
Reverse Characteristics
600
T
J
=25°C
T
J
=175°C
60
I
F
Forward Current (A)
I
R
Reverse Current (µA)
50
40
30
T
J
=125°C
T
J
=75°C
T
J
=175°C
500
400
300
200
100
0
200
T
J
=125°C
T
J
=75°C
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
V
F
Forward Voltage (V)
Capacitance vs.Reverse Voltage
T
J
=25°C
300
400
500
600
700
800
V
R
Reverse Voltage (V)
1200
C, Capacitance (pF)
1000
800
600
400
200
0
1
APT30DC60HJ – Rev 0 November, 2009
10
100
V
R
Reverse Voltage
1000
ISOTOP® is a registered trademark of ST Microelectronics NV
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
