APTLM50HM75FRT
Phase Shift Operation
MOSFET Power Module
V
DSS
= 500V
R
DSon
= 75mΩ max @ Tj = 25°C
I
D
= 43A @ Tc = 25°C
Application
•
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Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
High frequency Power Supply
Battery charger
Welder power stage
High power class ‘D’Amplifier
Features
•
Power MOS 7
®
FREDFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Integrated gate Driver
Very low stray inductance
- Symmetrical design
Internal thermistor for temperature monitoring
High level of integration
Up to 3kW output power
220V/240V AC Single Phase Input
high switching frequency (up to 100kHz using a
Phase Shifted ZVT Controller)
Power Factor Corrector Circuit
Input Rectifier Bridge
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Benefits
•
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These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTLM50HM75FRT – Rev 2
June, 2004
Outstanding performance at high frequency
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals for signal and M3 for power
for easy PCB mounting
APTLM50HM75FRT
All ratings @ T
j
= 25°C unless otherwise specified
Symbol
BV
DSS
I
D
I
DM
P
D
R
DS(on)
R
SH
P
SH
R
thJC
Boost Switch Static Electrical Characteristics
Characteristic
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain Current
Total Power dissipation
Drain – Source on Resistance
Shunt Resistor Value
Shunt Resistor Value
Junction to Case
Test Conditions
V
GS
= 0V, I
D
= 1mA
Tc=25°C
Min
500
Typ
Max
55
240
410
60
10.5
10
0.3
Unit
V
A
W
mΩ
W
°C/W
V
GS
= 10V, I
D
= 55A
9.5
T
C
= 80°C
10
Symbol Characteristic
t
r
Rise time
t
f
Fall time
Boost Switch Dynamic Characteristics
Test Conditions
V
in
= 15V, V
BUS
= 250V
I
D
= 24A
Min
Typ
10
5
Max
Unit
ns
Boost Switch Body Diode Characteristics
Symbol
I
S
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Min
Typ
V
GS
= 0V, I
S
= -55A
Max
55
1.3
I
S
= -55A, dI
S
/dt = 300A/µs
I
S
= -55A, dI
S
/dt = 100A/µs
544
24
Unit
A
V
ns
µC
Boost Switch Driver Electrical Characteristics
Symbol
V5
IV5
H5
(max)
H5
(th+)
H5
(th-)
H5
(hys)
ZH5
T
d(on)
T
d(off)
Characteristic
Operating Auxiliary Supply Voltage
Operating Auxiliary Supply Current
Maximum Input Voltage
Positive Going Threshold Voltage
Negative Going Threshold Voltage
Hysteresis Voltage
Input Impedance
Turn On delay time
Turn Off delay time
Test Conditions
Fout = 100kHz, V5 = 15V
Min
13
-0.5
6.8
4.0
1.6
Typ
15
140
8.8
5.8
2.1
1
220
1300
Max
16
16.5
10.8
7.4
5.0
300
1500
Unit
V
mA
V
kΩ
ns
V5 = 15V
V5 = 15V
V5 = 15V
Driver + Mosfet
Driver + Mosfet
Boost Diode Characteristics
Symbol
V
RRM
V
F
I
F(av)
I
RRM
t
rr
R
thJC
T
c
= 85°C
T
j
= 100°C
6.9
74
A
ns
Junction to Case
1.2
°C/W
APT website – http://www.advancedpower.com
2–6
APTLM50HM75FRT – Rev 2
Reverse Recovery Time
June, 2004
Characteristic
Peak Repetitive Reverse Voltage
Diode Forward Voltage
Maximum Average Forward Current
Reverse Recovery Current
Test Conditions
I
F
= 30A
Duty cycle = 50%
I
F
= 30A
V
R
=400V
Di
F
/dt=200A/µs
Min
600
Typ
2.2
Max
2.7
30
Unit
V
APTLM50HM75FRT
Bridge Rectifier Static Electrical Characteristics
Symbol
V
RRM
V
F
I
F(av)
R
thJC
Characteristic
Peak Repetitive Reverse Voltage
Diode Forward Voltage
Average Rectifier Forward Current
Junction to Case
I
F
= 40A
T
C
= 80°C
Test Conditions
Min
1200
Typ
Max
1.3
40
1
Unit
V
A
°C/W
Full Bridge Static Electrical Characteristics
Symbol Characteristic
BV
DSS
Drain - Source Breakdown Voltage
I
D
I
DM
P
D
R
DS(on)
R
thJC
Continuous Drain Current
Pulsed Drain Current
Total Power dissipation
Drain – Source on Resistance
Junction to Case
Test Conditions
V
GS
= 0V, I
D
= 1mA
Tc=25°C
Tc=80°C
Min
500
Typ
Max
43
32
184
312
75
0.4
Unit
V
A
W
mΩ
°C/W
V
GS
= 10V, I
D
= 23A
Symbol Characteristic
t
r
Rise time
t
f
Fall time
Full Bridge Dynamic Characteristics
Test Conditions
V
in
= 15V, V
BUS
= 330V
I
D
= 43A
Min
Typ
50
30
Max
Unit
ns
Full Bridge Body Diode Characteristics
Symbol
I
S
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
Min
Typ
V
GS
= 0V, I
S
= -43A
Max
43
1.3
Unit
A
V
ns
µC
I
S
= -43A
V
R
= 250V
dI
S
/dt = 100A/µs
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
233
499
1.9
5.7
Full Bridge Driver Electrical Characteristics
Symbol
Vi
IVi
Hi
Hi
(th+)
Hi
(th-)
Hi
(hys)
ZHi
T
d(on)
T
d(off)
Characteristic
Operating Auxiliary Supply Voltage
Test Conditions
i = 1, 3, 4
Fout =100kHz, Vi=15V, i=1, 3, 4
Min
13
-16
7.5
4.7
1.6
APT website – http://www.advancedpower.com
3–6
APTLM50HM75FRT – Rev 2
Operating Auxiliary Supply Current
Maximum Input Voltage
Positive Going Threshold Voltage
Negative Going Threshold Voltage
Hysteresis Voltage
Input Impedance
Turn On delay time
Turn Off delay time
Typ
15
100
9.5
6.5
2.1
1.0
280
600
Max
16
16
11.5
8.1
5.0
400
1000
Unit
V
mA
V
kΩ
ns
June, 2004
i = 1, 2, 3, 4
Vi = 15V, i= 1, 2, 3, 4
Vi = 15V, i= 1, 2, 3, 4
Vi = 15V, i= 1, 2, 3, 4
i= 1, 2, 3, 4
Driver + Mosfet
Driver + Mosfet
APTLM50HM75FRT
Thermal and package characteristics
Symbol
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
For terminals
M5
M3
Min
2500
-25
-25
-25
2
Typ
Max
150
100
70
3.5
Unit
V
°C
N.m
g
Unit
kΩ
K
0.5
620
Min
Typ
68
4080
Max
Temperature sensor NTC
Symbol Characteristic
R
25
Resistance @ 25°C
B
25/85
T
25
= 298.16 K
R
T
=
R
25
1
1
exp
B
25 / 85
−
T
25
T
T: Thermistor temperature
R
T
: Thermistor value at T
Package outline
APT website – http://www.advancedpower.com
4–6
APTLM50HM75FRT – Rev 2
June, 2004
APTLM50HM75FRT
Typical MOSFET Full Bridge Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.45
Thermal Impedance (°C/W)
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0.3
0.1
0.05
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
0.7
0.5
0.9
0
0.00001
Low Voltage Output Characteristics
180
160
I
D
, Drain Current (A)
140
120
100
80
60
40
20
0
0
5
10
15
20
V
DS
, Drain to Source Voltage (V)
R
DS
(on) vs Drain Current
I
D
, DC Drain Current (A)
Normalized to
V
GS
=10V @ 23A
Transfert Characteristics
120
V
GS
=10&15V
I
D
, Drain Current (A)
8V
7.5V
7V
6.5V
6V
5.5V
100
80
60
40
20
0
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
T
J
=25°C
T
J
=125°C
T
J
=-55°C
25
0
1
2
3
4
5
6
7
8
V
GS
, Gate to Source Voltage (V)
DC Drain Current vs Case Temperature
50
40
30
20
10
0
R
DS
(on) Drain to Source ON Resistance
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0
V
GS
=10V
V
GS
=20V
20
40
60
80
100
25
I
D
, Drain Current (A)
APT website – http://www.advancedpower.com
5–6
APTLM50HM75FRT – Rev 2
June, 2004
50
75
100
125
T
C
, Case Temperature (°C)
150
