(AQV410EH, 414EH) (AQV412EH)
Normally closed type
with reinforced insulation
GE 1 Form B
(AQV41❍EH)
FEATURES
8.8
.346
8.8
6.4
.346
.252
3.9
.154
6.4
.252
3.6
.142
(Height includes standoff)
mm
inch
1
2
3
6
5
4
1. 1 Form B output type
2. 60V type couples high capacity
(0.55A) with low on-resistance (Typ.
1Ω).
3. Low on-resistance
This has been realized thanks to the
built-in MOSFET processed by our
proprietary method, DSD (Double-
diffused and Selective Doping) method.
Cross section of the normally-closed type of
power MOS
Passivation membrane
Intermediate
Source electrode Gate electrode
insulating
membrane
5. High sensitivity and low on-
resistance
Can control max. 0.55 A load current with
5 mA input current.
Low on-resistance of Typ. 1Ω
(AQV412EH).
6. Low-level off-state leakage current
7. Reinforced insulation: 5,000 V
More than 0.4 mm internal insulation
distance between inputs and outputs.
Conforms to EN41003, EN60950
(reinforced insulation).
RoHS compliant
N
+
P
+
N
+
N
+
P
+
N
+
Gate
oxidation
membrane
TYPICAL APPLICATIONS
• Power supply
• Measuring equipment
• Security equipment
• Telephone equipment
• Sensing equipment
N–
Drain
electrode
N
+
4. Controls low-level analog signals
PhotoMOS feature extremely low closed-
circuit offset voltage to enable control of
low-level analog signals without
distortion.
TYPES
Part No.
Output rating*
I/O isolation
voltage
Load
voltage
60 V
AC/DC
dual use
5,000 Vrms
(Reinforced)
350 V
400 V
Load
current
550 mA
130 mA
120 mA
DIP6-pin
Package
Through hole
terminal
Tube packing style
AQV412EH
AQV410EH
AQV414EH
AQV412EHA
AQV410EHA
AQV414EHA
Surface-mount terminal
Tape and reel packing style
Picked from the Picked from the
1/2/3-pin side
4/5/6-pin side
AQV412EHAX
AQV410EHAX
AQV414EHAX
AQV412EHAZ
AQV410EHAZ
AQV414EHAZ
Packing quantity
Tube
1 tube contains:
50 pcs.
1 batch contains:
500 pcs.
Tape and reel
1,000 pcs.
*Indicate the peak AC and DC values.
Note: The surface mount terminal shape indicator “A” and the packing style indicator “X” or “Z” are not marked on the device.
–1–
ASCTB127E 201703-T
GE 1 Form B (AQV41❍EH)
RATING
1. Absolute maximum ratings
(Ambient temperature: 25°C
77°F)
Item
LED forward current
LED reverse voltage
Peak forward current
Power dissipation
Load voltage (peak AC)
Continuous load
current
Peak load current
Power dissipation
Total power dissipation
I/O isolation voltage
Ambient
temperature
Operating
Storage
Symbol
I
F
V
R
I
FP
P
in
V
L
A
Output
I
L
I
peak
P
out
P
T
V
iso
T
opr
T
stg
B
C
Type of
connection
AQV412EH(A)
AQV410EH(A)
50 mA
5V
1A
75 mW
350 V
0.13 A
0.15 A
0.17 A
0.4 A
500 mW
550 mW
5,000 Vrms
–40 to +85°C
–40 to +185°F
–40 to +100°C
–40 to +212°F
AQV414EH(A)
Remarks
Input
f = 100 Hz, Duty factor = 0.1%
400 V
0.12 A
0.13 A
0.15 A
0.3 A
A connection: Peak AC, DC
B,C connection: DC
A connection: 100 ms (1 shot), V
L
= DC
60 V
0.55 A
0.65 A
0.8 A
1.5 A
(Non-icing at low temperatures)
2. Electrical characteristics
(Ambient temperature: 25°C
77°F)
Item
LED operate (OFF) current
Input
LED reverse (ON) current
LED dropout voltage
Typical
Maximum
Minimum
Typical
Typical
Maximum
Typical
R
on
Maximum
Typical
On resistance
Output
Maximum
Typical
R
on
Maximum
Off state leakage current
Operate (OFF) time*
Transfer
characteristics
Reverse (ON) time*
I/O capacitance
Initial I/O isolation resistance
Maximum
Typical
Maximum
Typical
Maximum
Typical
Maximum
Minimum
I
Leak
T
off
T
on
C
iso
R
iso
—
—
—
—
—
3 ms
8 ms
0.3 ms
1.5 ms
0.8 pF
1.5 pF
1,000 MΩ
C
R
on
B
A
Symbol
I
Foff
I
Fon
V
F
Type of
connection
—
—
—
1
Ω
2.5
Ω
0.55
Ω
1.3
Ω
0.3
Ω
0.7
Ω
AQV412EH(A)
AQV410EH(A)
1.9 mA
3.0 mA
0.4 mA
1.8 mA
1.25 V (1.14 V at I
F
= 5 mA)
1.5 V
18
Ω
35
Ω
13
Ω
17.5
Ω
6.5
Ω
8.8
Ω
10
μA
1.5 ms
3.0 ms
1.3 ms
25.2
Ω
50
Ω
19
Ω
25
Ω
10
Ω
12.5
Ω
AQV414EH(A)
Condition
I
L
= Max.
I
L
= Max.
I
F
= 50 mA
I
F
= 0 mA
I
L
= Max.
Within 1 s
I
F
= 0 mA
I
L
= Max.
Within 1 s
I
F
= 0 mA
I
L
= Max.
Within 1 s
I
F
= 5 mA
V
L
= Max.
I
F
= 0 mA
➝
5 mA
I
L
= Max.
I
F
= 5 mA
➝
0 mA
I
L
= Max.
f = 1 MHz
V
B
= 0 V
500 V DC
*Operate/Reverse time
Input
Output
10%
90%
Toff
Ton
3. Recommended operating conditions
(Ambient temperature: 25°C
77°F)
Please use under recommended operating conditions to obtain expected characteristics.
Item
LED current
Load voltage (Peak AC)
Continuous load current (A connection)
Load voltage (Peak AC)
Continuous load current (A connection)
Load voltage (Peak AC)
Continuous load current (A connection)
Symbol
I
F
V
L
I
L
V
L
I
L
V
L
I
L
Min.
5
—
—
—
—
—
—
Max.
30
48
0.55
280
0.13
320
0.12
Unit
mA
V
A
V
A
V
A
AQV412EH(A)
AQV410EH(A)
AQV414EH(A)
■
These products are not designed for automotive use.
If you are considering to use these products for automotive applications, please contact your local Panasonic Corporation
technical representative.
–2–
ASCTB127E 201703-T
GE 1 Form B (AQV41❍EH)
REFERENCE DATA
1-(1). Load current vs. ambient temperature
characteristics
Allowable ambient temperature: –40 to +85°C
–40 to +185°F
Type of connection: A
140
120
Load current, mA
100
80
60
40
20
0
–40 –20
0
20
40
60
80 85 100
AQV410EH
AQV414EH
1-(2). Load current vs. ambient temperature
characteristics
Allowable ambient temperature: –40 to +85°C
–40 to +185°F
Type of connection: A
700
600
Load current, mA
500
400
300
200
2. On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 4 and 6;
LED current: 0 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
50
On resistance,
Ω
AQV412EH
40
30
AQV414EH
20
AQV410EH
10
100
AQV412EH
0
-40
-20
0
20
40
60
80 85 100
0
-40
-20
Ambient temperature,
°C
Ambient temperature,
°C
0
20 40
60 8085
Ambient temperature,
°C
3. Operate (OFF) time vs. ambient temperature
characteristics
LED current: 5mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5.0
Operate (OFF) time, ms
4. Reverse (ON) time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0.8
Reverse (ON) time, ms
5. LED operate (OFF) current vs. ambient
temperature characteristics
Sample: All types;
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5
LED operate (OFF) curremt, mA
4.0
AQV412EH
4
0.6
3.0
AQV410EH
AQV414EH
2.0
AQV410EH
AQV414EH
3
0.4
2
0.2
1.0
AQV412EH
1
0
-40
-20
0
20
40
60
80 85
0
-40
-20
0
20
40
60
80 85
0
-40
-20
0
20
40
60
8085
Ambient temperature,
°C
Ambient temperature,
°C
Ambient temperature,
°C
6. LED reverse (ON) current vs. ambient
temperature characteristics
Sample: All types;
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5
LED reverse (ON) current, mA
7. LED dropout voltage vs. ambient
temperature characteristics
Sample: All types;
LED current: 5 to 50 mA
1.5
LED dropout voltage, V
1.4
1.3
1.2
1.1
1.0
0
50mA
30mA
20mA
10mA
5mA
8-(1). Current vs. voltage characteristics of
output at MOS portion
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C
77°F
140
AQV410EH
120
100
AQV414EH
80
60
40
20
–3 –2.5 –2 –1.5 –1 –0.5
0.5 1 1.5 2 2.5 3
–20
Voltage, V
–40
–60
–80
–100
–120
–140
Current, mA
4
3
2
1
0
-40
-20
0
20
40
60
80 85
–40
–20
0
20
40
60
80 85
Ambient temperature,
°C
Ambient temperature,
°C
–3–
ASCTB127E 201703-T
GE 1 Form B (AQV41❍EH)
8-(2). Current vs. voltage characteristics of
output at MOS portion
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C
77°F
0.6
Off state leakage current, A
10
–3
9. Off state leakage current vs. load voltage
characteristics
Sample: All types;
Measured portion: between terminals 4 and 6;
LED current: 5 mA; Ambient temperature: 25°C
77°F
10. Operate (OFF) time vs. LED forward
current characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C
77°F
10.0
Operate (OFF) time, ms
Current, A
0.4
0.2
AQV412EH
0
0
-0.2
-0.4
0.5
Voltage, V
1
8.0
10
–6
AQV414EH
AQV410EH
AQV410EH
AQV414EH
6.0
-1
-0.5
10
–9
AQV412EH
4.0
AQV412EH
2.0
10
–12
-0.6
0
20
40
60
80
100
0
10
20
30
40
50
60
Load voltage, V
LED forward current, mA
11. Reverse (ON) time vs. LED forward current
characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C
77°F
0.5
Reverse (ON) time, ms
12. Output capacitance vs. applied voltage
characteristics
Measured portion: between terminals 4 and 6;
Frequency: 1 MHz;
Ambient temperature: 25°C
77°F
500
Output capacitance, pF
0.4
AQV410EH, AQV414EH
AQV412EH
0.2
400
0.3
300
AQV412EH
200
0.1
100
AQV410EH, AQV414EH
0
0
10
20
30
40
50
60
0
10
20
30
40
50
60
LED forward current, mA
Applied voltage, V
–4–
ASCTB127E 201703-T
