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Datasheet
AS1358 / AS1359
1 5 0 m A / 3 0 0 m A , U l t r a -L o w - N o i s e , H i g h - P S R R L o w D r o p o u t R e g u l a t o r s
1 General Description
The AS1358 / AS1359 are ultra-low-noise, low-dropout linear
regulators specifically designed to deliver up to 150/300mA
continuous output current, and can achieve a low 140mV dropout for
300mA load current. The LDOs are designed and optimized to work
with low-cost, small-capacitance ceramic capacitors.
The devices are available as the standard products listed in
Table 1.
Table 1. Standard Products
Model
AS1358
AS1359
Load Current
150mA
300mA
Output Voltage
2 Key Features
Preset Output Voltages: 1.5V to 4.5V (in 50mV steps)
Output Noise: 9µV
RMS
@ 100Hz to 100kHz
Power-Supply Rejection Ratio: 92dB @ 1kHz
Low Dropout: 140mV @ 300mA Load
An integrated P-channel MOSFET pass transistor allows the devices
to maintain extremely low quiescent current (40µA).
The AS1358 / AS1359 uses an advanced architecture to achieve
ultra-low output voltage noise of 9µV
RMS
and a power-supply
rejection-ratio of better than 80dB (up to 10kHz).
The AS1358 / AS1359 requires only 1µF output capacitor for stability
at any load. When the LDO is disabled, current consumption drops
below 500nA.
The devices are available in a TSOT23 5-pin package.
Figure 1. Typical Application Circuit
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Guaranteed 150mA / 300mA Output
1.25V Internal Reference
Stable with 1µF Ceramic Capacitor for any Load
Preset – 1.5V to 4.5V
Preset – 1.5V to 4.5V
Extremely-Low Quiescent Current: 40µA
Excellent Load/Line Transient
Overcurrent and Thermal Protection
TSOT23 5-pin Package
3 Applications
The devices are ideal for mobile phones, wireless phones, PDAs,
handheld computers, mobile phone base stations, Bluetooth portable
radios and accessories, wireless LANs, digital cameras, personal
audio devices, and any other portable, battery-powered application.
Input
2V to 5.5V
1
5
Output
1.5V to 4.5V
C
IN
1µF
IN
OUT
2
GND
AS1358 / AS1359
On
Off
3
SHDNN
4
C
BYPASS
10nF
C
OUT
1µF
BYPASS
Revision 1.5
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AS1358 / AS1359
Datasheet - P i n A s s i g n m e n t s
4 Pin Assignments
Figure 2. Pin Assignments (Top View)
IN 1
5 OUT
4.1 Pin Descriptions
Table 2. Pin Descriptions
Pin Number
1
2
3
4
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SHDNN 3
4 BYPASS
GND 2
AS1358 /
AS1359
TSOT23 5-pin
Pin Name
IN
Description
Unregulated Input Supply.
GND
Ground.
Provides the electrical connection to system ground and also serves as a heat sink.
Connect pin GND to the system ground using a large pad or ground plane.
Shutdown.
Pull this pin low to disable the LDO.
Noise Bypass for Low-Noise Operation.
Connect a 10nF capacitor from this pin to
OUT.
Note:
This pin is shorted to GND in shutdown mode.
Regulated Output Voltage.
Bypass this pin with a capacitor to GND.
SHDNN
BYPASS
OUT
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AS1358 / AS1359
Datasheet - A b s o l u t e M a x i m u m R a t i n g s
5 Absolute Maximum Ratings
Stresses beyond those listed in
Table 3
may cause permanent damage to the device. These are stress ratings only, and functional operation of
the device at these or any other conditions beyond those indicated in
Electrical Characteristics on page 4
is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Table 3. Absolute Maximum Ratings
Parameter
IN to GND
OUT, SHDNN to GND
BYPASS to GND
Output Short-Circuit Duration
Thermal Resistance
JA
Min
-0.3
-0.3
-0.3
Max
+7
IN +0.3
OUT +0.3
Infinite
201.7
+85
ºC/W
ºC
Units
V
V
V
Comments
Operating Temperature Range
Junction Temperature
Storage Temperature Range
Package Body Temperature
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-40
+125
ºC
ºC
-65
+150
+260
ºC
Revision 1.5
Junction-to-ambient thermal resistance is very dependent
on application and board-layout. In situations where high
maximum power dissipation exists, special attention must
be paid to thermal dissipation during board design.
The reflow peak soldering temperature (body temperature)
specified is in accordance with
IPC/JEDEC J-STD-020D
“Moisture/Reflow Sensitivity Classification for Non-
Hermetic Solid State Surface Mount Devices”.
The lead finish for Pb-free leaded packages is matte tin
(100% Sn).
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AS1358 / AS1359
Datasheet - E l e c t r i c a l C h a r a c t e r i s t i c s
6 Electrical Characteristics
All limits are guaranteed. The parameters with Min and Max values are guaranteed by production tests or SQC (Statistical Quality Control)
methods.
V
IN
= V
OUT
+0.5V, C
IN
= 1µF, C
OUT
= 1µF, C
BYPASS
= 10nF, T
AMB
= -40 to +85ºC (unless otherwise specified).
Typical values are at T
AMB
= +25ºC.
Table 4. Electrical Characteristics
Symbol
V
IN
Parameter
Input Voltage Range
I
OUT
= 1mA, T
AMB
= +25ºC
I
OUT
= 100µA to 150mA,
T
AMB
= +25ºC (AS1358)
Output Voltage Accuracy
I
OUT
= 100µA to 300mA,
T
AMB
= +25ºC (AS1359)
Condition
Min
2
-0.5
-0.75
-1.0
Typ
Max
5.5
+0.5
Unit
V
I
OUT
I
LIMIT
Maximum Output Current
Current Limit
Dropout Voltage
I
Q
V
LNR
V
LDR
I
SHDNN
PSRR
Quiescent Current
Line Regulation
Load Regulation
Shutdown Supply Current
Ripple Rejection
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Output Noise Voltage (RMS)
Shutdown
Shutdown Exit Delay
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SHDNN Logic Low Level
SHDNN Logic High Level
Thermal Protection
T
SHDNM
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
160
15
ºC
ºC
T
SHDNM
1. Dropout is defined as V
IN
- V
OUT
when V
OUT
is 100mV below the value of V
OUT
for V
IN
= V
OUT
+ 0.5V
2. Time needed for V
OUT
to reach 90% of final value
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I
OUT
= 100µA to 150mA, (AS1358)
AS1358
-1.5
-2.0
150
300
+1.5
+2.0
I
OUT
= 100µA to 300mA, (AS1359)
AS1359
AS1358, OUT = 90% of nom., T
AMB
= +25ºC
AS1359, OUT = 90% of nom., T
AMB
= +25ºC
V
OUT
3V, I
OUT
= 150mA
V
OUT
3V, I
OUT
= 300mA, (AS1359 only)
2.5V
V
OUT
3V, I
OUT
= 150mA
2.5V
V
OUT
3V, I
OUT
= 300mA,
(AS1359 only)
270
510
70
95
140
90
200
120
1
170
2.0V
V
OUT
2.5V, I
OUT
= 150mA
140
2.0V
V
OUT
2.5V, I
OUT
= 300mA,
(AS1359 only)
I
OUT
= 0.05mA
V
IN
= V
OUTNOM
- 0.1V, I
OUT
= 0mA
I
OUT
= 1 to 150mA / 300mA
SHDNN = 0V
f = 1kHz, I
OUT
= 10mA
270
40
150
V
IN
= (V
OUT
+0.5V) to 5.5V, I
OUT
= 0.1mA
0.02
9
0.0005
92
80
62
9
f = 10kHz, I
OUT
= 10mA
f = 100kHz, I
OUT
= 10mA
f = 100Hz to 100kHz,
I
LOAD
= 0 to 150mA / 300mA
R
LOAD
= 50
V
IN
= 2V to 5.5V
V
IN
= 2V to 5.5V
1.5
2
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+1.0
%
mA
mA
230
mV
190
350
90
250
µA
%/V
nA
dB
%/mA
500
µV
300
0.4
µs
V
V
