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AS29LV016BRG-90/ET

16 Megabit (2M x 8-bit / 1M x 16-bit) cmos 3.0 volt-only boot sector flash memory

厂商名称:AUSTIN

厂商官网:http://www.austinsemiconductor.com/

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COTS PEM
COTS
BOOT SECTOR
BOOT SECTOR FLASH
Austin Semiconductor, Inc.
AS29LV016
16 Megabit (2M x 8-Bit / 1M x 16-Bit)
CMOS 3.0 Volt-Only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
Commercial Off The Shelf, up-screened device
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
Manufactured on 200nm process technology
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
thirty-one 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
thirty-one 32 Kword sectors (word mode)
Sector Protection features
— A hardware method of locking a sector to prevent
any program or erase operations within that
sector
— Sectors can be locked in-system or via
programming equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
Top or bottom boot block configurations
available
Compatibility with JEDEC standards
— Pinout and software compatible with single-power
supply Flash
— Superior inadvertent write protection
PERFORMANCE CHARACTERISTICS
High performance
— Access times as fast as 70 ns @ Enhanced
Temp [/ET]
— Extended temp range available [/XT] (-55°C to
+125°C)
Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 9 mA read current
— 20 mA program/erase current
Cycling endurance: 1,000,000 cycles per sector
typical
Data retention: 20 years typical
SOFTWARE FEATURES
CFI (Common Flash Interface) compliant
— Provides device-specific information to the
system, allowing host software to easily
reconfigure for different Flash devices
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
Data# Polling and toggle bits
— Provides a software method of detecting program
or erase operation completion
PACKAGE OPTIONS
48-pin TSOP1
HARDWARE FEATURES
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program
or erase cycle completion
Hardware reset pin (RESET#)
AS29LV016
Rev. 2.1 10/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
COTS PEM
COTS
BOOT SECTOR
BOOT SECTOR FLASH
Austin Semiconductor, Inc.
AS29LV016
GENERAL DESCRIPTION
The AS29LV016 is a 16 Mbit, 3.0 Volt-only Flash
memory organized as 2,097,152 bytes or
1,048,576 words. The word-wide data (x16)
appears on DQ15–DQ0; the byte-wide (x8) data
appears on DQ7–DQ0. This device is designed to
be programmed in-system with the standard
system 3.0 volt V
CC
supply. A 12.0 V V
PP
or 5.0
V
CC
are not required for write or erase operations.
The device can also be programmed in standard
EPROM programmers.
The device offers access times of 70 ns, 90 ns
and 100 ns allowing high speed microprocessors
to operate without wait states. To eliminate bus
contention the device has separate chip enable
(CE#), write enable (WE#) and output enable
(OE#) controls.
The device requires only a
single 3.0 volt power
supply
for both read and write functions. Internally
generated and regulated voltages are provided
for the program and erase operations.
The AS29LV016 is entirely command set
compatible with the
JEDEC single-power-supply
Flash standard.
Commands are written to the
command register using standard microprocessor
write timings. Register contents serve as input
to an internal state-machine that controls the
erase and programming circuitry. Write cycles also
internally latch addresses and data needed for
the programming and erase operations. Reading
data out of the device is similar to reading from
other Flash or EPROM devices.
Device programming occurs by executing the
program command sequence. This initiates the
Embedded Program
algorithm—an internal
algorithm that automatically times the program
pulse widths and verifies proper cell margin. The
Unlock Bypass
mode facilitates faster programming
times by requiring only two write cycles to program
data instead of four.
Device erasure occurs by executing the erase
command sequence. This initiates the
Embedded
Erase
algorithm—an internal algorithm that
automatically preprograms the array (if it is not
AS29LV016
Rev. 2.1 10/08
already programmed) before executing the erase
operation. During erase, the device automatically
times the erase pulse widths and verifies proper
cell margin.
The host system can detect whether a program
or erase operation is complete by observing the
RY/BY# pin, or by reading the DQ7 (Data# Polling)
and DQ6 (toggle)
status bits.
After a program or
erase cycle has been completed, the device is
ready to read array data or accept another
command.
The
sector erase architecture
allows memory
sectors to be erased and reprogrammed without
affecting the data contents of other sectors. The
device is fully erased when shipped from the
factory.
Hardware data protection
measures include a low
V
CC
detector that automatically inhibits write
operations during power transitions. The
hardware
sector protection
feature disables both program
and erase operations in any combination of the
sectors of memory. This can be achieved in-system
or via programming equipment.
The
Erase Suspend/Erase Resume
feature enables
the user to put erase on hold for any period of
time to read data from, or program data to, any
sector that is not selected for erasure. True
background erase can thus be achieved.
The
hardware RESET# pin
terminates any operation
in progress and resets the internal state machine
to reading array data. The RESET# pin may be
tied to the system reset circuitry. A system reset
would thus also reset the device, enabling the
system microprocessor to read the boot-up
firmware from the Flash memory.
The device offers two power-saving features.
When addresses have been stable for a specified
amount of time, the device enters the
automatic
sleep mode.
The system can also place the device
into the
standby mode.
Power consumption is
greatly reduced in both these modes.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
COTS PEM
COTS
BOOT SECTOR
BOOT SECTOR FLASH
Austin Semiconductor, Inc.
AS29LV016
PRODUCT SELECTOR GUIDE
Family Part Number
Speed Option
Voltage Range: Vcc = 2.7-3.6V
Max access time, ns (t
ACC
)
Max CE# access time, ns (t
CE
)
70
70
70
AS29LV016
90
90
90
35
100
100
100
40
Max OE# access time, nc (t
OE
)
30
Note:
See AC Characteristics on page 29 for full specifications
g
BLOCK DIAGRAM
RY/BY#
V
CC
V
SS
Sector Switches
Erase Voltage
Generator
DQ0
DQ15 (A-1)
RESET#
Input/Output
Buffers
WE#
BYTE#
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
STB
Data
Latch
CE#
OE#
STB
Y-Decoder
Y-Gating
V
CC
Detector
Timer
Address Latch
X-Decoder
Cell Matrix
A0–A19
AS29LV016
Rev. 2.1 10/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
COTS PEM
COTS
BOOT SECTOR
BOOT SECTOR FLASH
Austin Semiconductor, Inc.
AS29LV016
PIN CONFIGURATION
A0–A19
=
DQ0–DQ14 =
DQ15/A-1 =
BYTE#
CE#
OE#
WE#
RESET#
RY/BY#
V
CC
V
SS
NC
=
=
=
=
=
=
=
20 addresses
15 data inputs/outputs
DQ15 (data input/output, word mode),
A-1 (LSB address input, byte mode)
Selects 8-bit or 16-bit mode
Chip enable
Output enable
Write enable
Hardware reset pin
Ready/Busy output
3.0 volt-only single power supply (see
Product Selector Guide for speed
options and voltage supply tolerances)
Device ground
Pin not connected internally
LOGIC SYMBOL
,
20
A0–A19
DQ0–DQ15
(A-1)
CE#
OE#
WE#
RESET#
BYTE#
RY/BY#
16 or 8
=
=
CONNECTION DIAGRAMS
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE#
RESET#
NC
NC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
V
SS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
V
SS
CE#
A0
Standard TSOP
AS29LV016
Rev. 2.1 10/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
COTS PEM
COTS
BOOT SECTOR
BOOT SECTOR FLASH
Austin Semiconductor, Inc.
AS29LV016
ORDERING INFORMATION
AS29LV016TRG-70/ET
AS29LV016BRG-70/ET
AS29LV016TRG-90/ET
AS29LV016BRG-90/ET
AS29LV016TRG-90/XT
AS29LV016BRG-90/XT
AS29LV016TRG-100/ET
AS29LV016BRG-100/ET
AS29LV016TRG-100/XT
AS29LV016BRG-100/XT
TOP BOOT
BOTTOM BOOT
TOP BOOT
BOTTOM BOOT
TOP BOOT
BOTTOM BOOT
TOP BOOT
BOTTOM BOOT
TOP BOOT
BOTTOM BOOT
TSOP1-48
TSOP1-48
TSOP1-48
TSOP1-48
TSOP1-48
TSOP1-48
TSOP1-48
TSOP1-48
TSOP1-48
TSOP1-48
ENHANCED
ENHANCED
ENHANCED
ENHANCED
EXTENDED
EXTENDED
ENHANCED
ENHANCED
EXTENDED
EXTENDED
PB-FREE OPTION (WHERE AVAILABLE)
AS29LV016TRGR-70/ET TOP BOOT
AS29LV016TRGR-70/ET BOTTOM BOOT
TAPE / REEL OPTION (WHERE AVAILABLE)
.14-14” Reel (32mm TAPE)
.7-7” Reel (32mm TAPE)
TSOP1-48
TSOP1-48
ENHANCED
ENHANCED
AS29LV016
Rev. 2.1 10/08
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
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