The AS6WA25616 is a low-power CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 262,144 words × 16 bits.
It is designed for memory applications where slow data access, low power, and simple interfacing are desired.
Equal address access and cycle times (t
AA
, t
RC
, t
WC
) of 55 ns are ideal for low-power applications. Active high and low chip selects (CS) permit
easy memory expansion with multiple-bank memory systems.
When CS is high, or UB and LB are high, the device enters standby mode: the AS6WA25616 is guaranteed not to exceed 72
µW
power
consumption at 3.6V and 55 ns. The device also returns data when V
CC
is reduced to 1.5V for even lower power consumption.
A write cycle is accomplished by asserting write enable (WE) and chip select (CS) low, and UB and/or LB low. Data on the input pins
I/O1–O16 is written on the rising edge of WE (write cycle 1) or CS (write cycle 2). To avoid bus contention, external devices should drive I/
O pins only after outputs have been disabled with output enable (OE) or write enable (WE).
A read cycle is accomplished by asserting output enable (OE), chip select (CS), UB and LB low, with write enable (WE) high. The chip drives
I/O pins with the data word referenced by the input address. When either chip select or output enable is inactive, or write enable is active, or
(UB) and (LB), output drivers stay in high-impedance mode.
These devices provide multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be written and
read. LB controls the lower bits, I/O1–I/O8, and UB controls the higher bits, I/O9–I/O16.
All chip inputs and outputs are CMOS-compatible, and operation is from a single 3.0 to 3.6V supply. Device is available in the JEDEC standard
400-mm, TSOP 2, and 48-ball FBGA packages.
Absolute maximum ratings
Parameter
Voltage on V
CC
relative to V
SS
Voltage on any I/O pin relative to GND
Power dissipation
Storage temperature (plastic)
Temperature with V
CC
applied
DC output current (low)
Device
Symbol
V
tIN
V
tI/O
P
D
T
stg
T
bias
I
OUT
Min
–0.5
–0.5
–
–65
–55
–
1.0
+150
+125
20
Max
V
CC
+ 0.5
Unit
V
V
W
°
C
°
C
mA
Note: Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Truth table
CS
H
L
L
L
WE
X
X
H
H
OE
X
X
H
L
LB
X
H
X
L
H
L
L
L
L
X
H
L
Key: X = Don’t care, L = Low, H = High.
UB
X
H
X
H
L
L
H
L
L
Supply
Current
I
SB
I
CC
I
CC
I/O1–I/O8 I/O9–I/O16
High Z
High Z
D
OUT
High Z
D
OUT
D
IN
High Z
High Z
High Z
D
OUT
D
OUT
High Z
D
IN
D
IN
Mode
Standby (I
SB
)
Output disable (I
CC
)
Read (I
CC
)
I
CC
High Z
D
IN
Write (I
CC
)
7/9/02; v.1.3
Alliance Semiconductor
P. 2 of 9
AS6WA25616
Recommended operating condition (over the operating range)
此前有传言称，MacBook Pro 最早将于 2026 年转向 OLED 显示技术。苹果分析师郭明錤和显示行业分析师罗斯・杨最近都预测，2025 款 14 英寸和 16 英寸的 MacBook Pro 将继续采用 Mini LED 显示屏。 此外，今年早些时候，彭博社的马克・古尔曼表示，苹果正在“努力在未来几年内使 MacBook Pro 更薄”。他表示，苹果的目标是创造“应该是整个科技行...[详细]
嵌入式系统
