Advance Information
June 2001
®
AS6YB51216
1.65V to 2.2V 512K × 16 Intelliwatt™ Super Low-Power CMOS SRAM
Features
•
•
•
•
•
•
•
AS6YB51216
Intelliwatt™ active power circuitry
Industrial temperature range (-40
o
- +85
o
C)
Organization:
524,288 words x 16 bits
1.65V to 2.2V power supply range
Fast access time of 55ns
Low power consumption: ACTIVE
- 33 mW max at 2.2 V and 55 ns
• Low power consumption: STANDBY
- 33
µ
W max at 2.2V
• 1.0V data retention
• Equal access and cycle times
• Easy memory expansion with CS1, CS2, OE inputs
• Smallest footprint package
- 48-ball FBGA; 7.0 x 9.0 mm
• ESD protection
≥
2000 volts
• Latch-up current
≥
200 mA
Logic block diagram
Row Decoder
V
DD
512K × 16
Array
(8,388,608)
V
SS
BBBBBBBBPin
arrangement (top view)
48-CSP Ball-Grid-Array Package
I/O1–I/O8
I/O9–I/O16
WE
I/O
buffer
Control circuit
Column decoder
A
B
C
D
E
F
G
H
1
LB
I/O9
I/O10
V
SS
V
CC
I/O15
I/O16
A18
2
3
OE
A0
UB
A3
I/O11 A5
I/O12 A17
I/O13 V
SS
I/O14 A14
DNU A12
A8
A9
4
A1
A4
A6
A7
A16
A15
A13
A10
5
A2
CS1
I/O2
I/O4
I/O5
I/O6
WE
A11
6
CS2
I/O1
I/O3
V
CC
V
SS
I/O7
I/O8
DNU
A0~A8
A9~A18
UB
OE
LB
CS1
CS2
Note: DNU = Do Not Use
Selection guide
V
CC
Range
Product
AS6YB51216
Min
(V)
1.65
Typ
(V)
1.8 - 2.0
Max
(V)
2.2
Speed
(ns)
55/70
Power Dissipation
Operating (I
CC1
)
Max (mA)
2
Standby (I
SB1
)
Max (
µ
A)
15
6/14/01; V.0.9.2
Alliance Semiconductor
Copyright © Alliance Semiconductor. All rights reserved.
