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ASMT-MB00-NC4

SINGLE COLOR LED, BLUE, 5.26mm, ROHS COMPLIANT PACKAGE-3

器件类别:光电子/LED    光电   

厂商名称:AVAGO

厂商官网:http://www.avagotech.com/

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
AVAGO
包装说明
ROHS COMPLIANT PACKAGE-3
Reach Compliance Code
compliant
颜色
BLUE
配置
SINGLE WITH BUILT-IN ZENER DIODE
最大正向电流
0.35 A
安装特点
SURFACE MOUNT
功能数量
1
端子数量
2
最高工作温度
85 °C
最低工作温度
-40 °C
光电设备类型
SINGLE COLOR LED
总高度
3.3 mm
包装方法
TUBE
峰值波长
460 nm
形状
ROUND
尺寸
5.26 mm
表面贴装
YES
视角
120 deg
文档预览
ASMT-Mx00
1 W Power LED Light Source
Data Sheet
Description
1W Power LED Light Source is a high performance
energy efficient device which can handle high thermal
and high driving current. The exposed pad design has
excellent heat transfer from the package to the mother-
board.
The Warm White Power LED is available in various color
temperature ranging from 2600K to 4000K. The product
has high Color Rendering Index (CRI) which provides
excellent color perception and visual clarity.
The low profile package design is suitable for a wide
variety of applications especially where height is a
constraint.
The package is compatible with reflow soldering
process. This will give more freedom and flexibility to
the light source designer.
Features
Available in Green, Blue, Cool White and Warm White
color
Energy efficient
Exposed pad for excellent heat transfer
Suitable for reflow soldering process
High current operation
Long operation life
Wide viewing angle
Silicone encapsulation
ESD of 16kV
MSL 2A
Specifications
InGaN technology
3.6 V, 350 mA (typical)
120 viewing angle
Applications
Portable (flash light, bicycle head light)
Reading light
Architectural lighting
Garden lighting
Decorative lighting
Package Dimensions
10.00
1
2
3
ANODE
CATHODE
ANODE
3.30
8.50
METAL SLUG
3
1.27
5.26
10.60
8.50
8.00
1.30
1
2
2.00
5.25
0.81
5.08
LED
+
NOTES:
1. ALL DIMENSIONS IN MILLIMETERS.
2. TOLERANCE IS ± 0.1 mm UNLESS OTHERWISE SPECIFIED.
ZENER
Device Selection Guide at Junction Temperature Tj = 25°C
Luminous Flux,
f
V[1,2]
(lm)
Color
Green
Blue
Cool White
Warm White
Part Number
ASMT-MG00
ASMT-MB00
ASMT-MW00
ASMT-MY00
Min.
25.5
5.5
43.0
43.0
Typ.
40.0
10.0
60.0
50.0
Max.
73.0
19.5
73.0
73.0
Test Current
(mA)
350
350
350
350
Dice
Technology
InGaN
InGaN
InGaN
InGaN
Notes
1.
f
V
is the total luminous flux output as measured with an integrating sphere at 25 ms mono pulse condition.
2. Flux tolerance is ± 10 %.
2
Part Numbering System
ASMT-M x 00 - N x
1
x
2
x
3
0
Color Bin Selection
Max Flux Bin Selection
Min Flux Bin Selection
Color
B - Blue
G - Green
W - Cool White
Y - Warm White
Absolute Maximum Ratings (T
A
= 25°C)
Parameter
DC Forward Current
[1]
Peak Pulsing Current
[2]
Power Dissipation
LED Junction Temperature
Operating Ambient Temperature Range
Storage Temperature Range
Soldering Temperature
Notes:
1. DC forward current – derate linearly based on Figure 5.
2. Pulse condition duty factor = 10%, Frequency = 1 kHz.
ASMT-Mx00
350
500
1400
110
-40 to +85
-40 to +100
Refer to Figure 8
Units
mA
mA
mW
°C
°C
°C
Optical Characteristics (T
A
= 25 °C)
Part Number
ASMT- MG00
ASMT- MB00
Color
Green
Blue
Peak Wavelength
l
PEAK
(nm)
Typ.
519
460
Dominant Wavelength
l
D [1]
(nm)
Typ.
525
467
Viewing Angle
2q
1/2 [2]
(Degrees)
Typ.
120
120
Viewing Angle
2q
½ [2]
(Degrees)
Typ.
110
110
Luminous Efficiency
(lm/W)
Typ.
32
8
Luminous Efficiency
(lm/W)
Typ.
48
40
Correlated Color Temperature,
CCT (Kelvin)
Part Number
ASMT-MW00
ASMT-MY00
Color
Cool White
Warm White
Min.
4000
2600
Max.
10000
4000
Notes:
1. The dominant wavelength,
l
D
, is derived from the CIE Chromaticity Diagram and represents the color of the device.
2.
q
1/2
is the off-axis angle where the luminous intensity is 1/2 the peak intensity.
3
Electrical Characteristic (T
A
= 25°C)
Forward Voltage
V
F
(Volts) @ I
F
= 350mA
Dice Type
InGaN
Typ.
3.6
Max.
4.0
Reverse Voltage
V
R
(Volts)
Max.
5
Thermal Resistance
Rq
j-ms
(°C/W)
[1]
Typ.
10
Notes:
1. R
qJ-ms
is Thermal Resistance from LED junction to metal slug.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
380
430
480
530
580
630
WAVELENGTH - nm
680
730
780
500
GREEN
BLUE
COOL WHITE
WARM WHITE
450
FORWARD CURRENT - mA
400
350
300
250
200
150
100
50
0
0.00 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00
FORWARD VOLTAGE - V
RELATIVE INTENSITY
Figure 1. Relative intensity vs. wavelength
1.4
Figure 2. Forward current vs. forward voltage
1.0
0.9
0.8
RELATIVE INTENSITY
RELATIVE LUMINOUS FLUX (φ
V
) - lm
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
50 100 150 200 250 300 350 400 450 500
MONO PULSE CURRENT - mA
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-90
-70
-50
-30
GREEN
BLUE
COOL WHITE
WARM WHITE
-10
10
30
50
70
90
OFF-AXIS ANGLE (°)
Figure 3. Relative luminous flux vs. mono pulse current
400
I
F
– MAXIMUM FORWARD CURRENT – mA
Figure 4. Radiation pattern
540
DOMINANT WAVELENGTH – nm
JA
= 50 C/W
JA
= 40 C/W
350
300
250
200
150
100
50
0
0
10
20
30
40
50
60
70
80
90
530
520
510
500
490
480
470
460
450
100
150
200
250
GREEN
JA
= 30 C/W
BLUE
300
350
400
T
A
– AMBIENT TEMPERATURE – C
FORWARD CURRENT – mA
Figure 5. Maximum forward current vs. ambient temperature
Derated based on T
J
MAX = 110°C, Rq
JA
= 30°C/W, 40°C/W and 50°C/W
Figure 6. Dominant wavelength vs. forward current – InGaN devices
4
0.016
0.014
0.012
Y-COORDINATES
100 mA
150 mA
TEMPERATURE
10 - 30 SEC.
255 - 260 C
217 C
200 C
150 C
3 C/SEC. MAX.
60 - 120 SEC.
100 SEC. MAX.
3 C/SEC. MAX.
-6 C/SEC. MAX.
0.01
0.008
0.006
0.004
0.002
0
0
350 mA
0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008
X-COORDINATES
300 mA
250 mA
TIME
(Acc. to J-STD-020C)
Figure 7. Chromaticity shift vs. current
*Note: (x,y) values @ 350 mA reference to (0.0)
Figure 8. Recommended reflow soldering profile
10.70 ± 0.10
300
RELATIVE FORWARD VOLTAGE SHIFT (mV)
250
200
150
100
50
0
-50
-100
-150
-200
-250
-300
-40
-15
10
35
TEMPERATURE - °C
60
85
8.40 ± 0.10
17.00 ± 0.20
1.00 ± 0.10
3.1 ± 0.10
5.08 ± 0.10
Figure 9. Recommended soldering land pattern
Figure 10. Temperature vs. relative forward voltage shift
100
90
80
RELATIVE LOP (%)
70
60
50
40
30
20
10
0
25
30
35
40
45
50
55
60
65
70
75
80
85
90
GREEN
BLUE
COOL WHITE
WARM WHITE
95 100 105 110
JUNCTION TEMPERATURE (°C)
Figure 11. Relative LOP vs. junction temperature
5
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