ASMT-MxA0
Moonstone
TM
1W Power LED Light Source on MCPCB
Data Sheet
Description
1W Power LED Light Source is a high performance energy
efficient device which can handle high thermal and high
driving current. The exposed pad design has excellent
heat transfer from the package to the motherboard.
The 1W Power LED light source is mounted on to metal
core PCB enabling optimum heat dissipation and ease of
installation.
The low profile package design is suitable for a wide
variety of applications especially where height is a con-
straint.
Features
•
Available in red, amber, green, blue, cool white and
warm white color.
•
Energy efficient
•
High current operation.
•
Long operation life.
•
Wide viewing angle.
•
Silicone encapsulation
Specifications
•
AllnGaP Technology for Red and Amber
•
InGaN Technology for Green, Blue, Cool White & Warm
White Color
•
2.4V, 350mA (typical) for AlInGaP Technology
•
3.6V, 350mA (typical) for InGaN Technology
•
110 viewing angle for White Products
•
120 viewing angle for Mono color Products
Applications
•
Portable (flash light, bicycle head light)
•
Reading light
•
Architectural lighting
•
Garden lighting
•
Decorative lighting
Device Selection Guide at Junction Temperature T
j
= 25
°
C
Luminous Flux, Φv
[1, 2, 3]
(lm)
Color
Red
Red
Amber
Green
Blue
Cool White
Warm White
Part Number
ASMT-MRA0-AGH00
ASMT-MRA0-AHJ00
ASMT-MAA0-AGH00
ASMT-MGA0
ASMT-MBA0
ASMT-MWA0
ASMT-MYA0
Min
25.5
33.0
25.5
43.0
11.5
43.0
43.0
Typ
35.0
40.0
35.0
60.0
15.0
60.0
50.0
Max
43.0
56.0
43.0
73.0
25.5
73.0
73.0
Test Current
(mA)
350
350
350
350
350
350
350
Dice
Technology
AlInGaP
AlInGaP
AlInGaP
InGaN
InGaN
InGaN
InGaN
Notes:
1. Φ
V
is the total luminous flux output as measured with an integrating sphere at 25ms mono pulse condition.
2. Flux tolerance is ±10 %
3. Φ
V
data are only applicable for ASMT-Mx00 component level device only.
Package Dimensions
NOTES:
1. ALL DIMENSIONS IN MILLIMETERS.
2. TOLERANCE IS ±0.1MM UNLESS OTHERWISE SPECIFIED.
Part Numbering System
ASMT - M x A0 - N x
1
x x
3
0
Color Bin Selection
Max Flux Bin Selection
Min Flux Bin Selection
Color
R – Red
A – Amber
B - Blue
G - Green
W - Cool White
Y - Warm White
2
Absolute Maximum Ratings
[3]
at T
A
= 25°C
Parameter
DC Forward Current
[1]
Peak Pulsing Current
[2]
Power Dissipation for AlInGaP
Power Dissipation for InGaN
LED Junction Temperature for AlInGaP
LED Junction Temperature for InGaN
Operating Ambient Temperature Range
Storage Temperature Range
ASMT-MxK0
350
500
1050
1400
120
110
-40 to +85
-40 to +100
Units
mA
mA
mW
mW
°C
°C
°C
°C
Note:
1. DC forward current – derate linearly based on Figure 5 for AlInGaP & Figure 11 for InGaN.
2. Pulse condition duty factor = 10%, Frequency = 1kHz.
3. Absolute Maximum Rating data are only applicable for ASMT-Mx00 component level device only.
Optical Characteristics
[3]
(T
A
= 25 °C)
Peak Wavelength
λ
PEAK
(nm)
Part Number
ASMT-MRA0-AGH00
ASMT-MRA0-AHJ00
ASMT-MAA0-AGH00
ASMT-MGA0
ASMT-MBA0
Dominant Wavelength
λ
D [1]
(nm)
Typ.
625
625
590
525
467
Viewing Angle
2q½
[2]
(Degrees)
Typ.
120
120
120
120
120
Luminous Efficiency
(lm/W)
Typ.
42
48
42
48
12
Color
Red
Red
Amber
Green
Blue
Typ.
635
635
598
519
460
Correlated Color Temperature,
CCT (Kelvin)
Part Number
ASMT-MWA0
ASMT-MYA0
Viewing Angle
2q½
[2]
(Degrees)
Typ
110
110
Luminous Efficiency
(lm/W)
Typ
48
40
Color
Cool White
Warm White
Min.
4000
2600
Max.
10000
4000
Notes:
1. The dominant wavelength,
λ
D
, is derived from the CIE Chromaticity Diagram and represents the color of the device.
2.
q½
is the off-axis angle where the luminous intensity is ½ the peak intensity.
3. Optical Characteristics data are only applicable for ASMT-Mx00 component level device only.
Electrical Characteristic
[2]
(T
A
= 25°C)
Forward Voltage
V
F
(Volts) @ I
F
= 350mA
Dice Type
AlInGaP
InGaN
Reverse Voltage
V
R
(Volts)
Max.
3.0
4.0
Thermal Resistance
Rq
j-b
(°C/W)
[1]
Typ.
12
18
Min.
2.0
3.2
Typ
2.4
3.6
Max.
5
5
Note:
1. Rq
j-b
is Thermal Resistance from LED junction to MCPCB.
2. Electrical Characteristic data are only applicable for ASMT-Mx00 component level device only.
3
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
380
430
480
530 580 630
WAVELENGTH - nm
680
730
780
FORWARD CURRENT - mA
RED
AMBER
500
450
400
350
300
250
200
150
100
50
0
0.00
RELATIVE INTENSITY
0.50
1.00
1.50
2.00
FORWARD VOLTAGE - V
2.50
3.00
Figure 1. Relative Intensity vs. Wavelength for AllnGaP
Figure 2. Forward Current vs Forward Voltage for AllnGaP
1.4
RELATIVE LUMINOUS FLUX (v) - lm
1.2
RELATIVE INTENSITY
1.0
0.8
0.6
0.4
0.2
0.0
0
50
100 150 200 250 300 350 400 450 500
MONO PULSE CURRENT - mA
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-90
-70
-50
-30 -10 10
30
OFF-AXIS ANGLE - °
50
70
90
Figure 3. Relative Luminous Flux vs. Mono Pulse Current for AllnGaP
Figure 4. Radiation Pattern for AllnGaP
400
I
F
- MAX FORWARD CURRENT - mA
350
300
250
200
150
100
50
0
0
10
20
30
40
50
60
70
T
A
- AMBIENT TEMPERATURE - °C
80
90
R
JA
= 50°C/W
R
JA
= 30°C/W
RELATIVE LOP (NORMAIZED AT 25°C)
2
RED
AMBER
1.5
1
0.5
0
-40
-25
-10
5 20 35 50 65
JUNCTION TEMPERATURE - °C
80
95
110
Figure 5. Maximum forward current vs. ambient temperature for AllnGaP
Derated based on T
J
MAX = 110°C, Rq
JA
= 30°C/W / 40°C/W and 50°C/W
Figure 6. Dominant wavelength vs. forward current – AllnGaP devices
Note: All parametric charts are only applicable for ASMT-Mx00 component level device only.
4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
380
FORWARD CURRENT - mA
RELATIVE INTENSITY
GREEN
BLUE
COOL WHITE
WARM WHITE
430
480
530 580 630
WAVELENGTH - nm
680
730
780
500
450
400
350
300
250
200
150
100
50
0
0.00
0.50
1.00
1.50 2.00 2.50 3.00
FORWARD VOLTAGE - V
3.50
4.00
Figure 7. Relative Intensity vs. Wavelength for InGaN
Figure 8. Forward Current vs Forward Voltage for InGaN
1.4
V
- RELATIVE LUMINOUS FLUX - lm
1.2
RELATIVE INTENSITY
1.0
0.8
0.6
0.4
0.2
0.0
0
50
100 150 200 250 300 350 400 450 500
MONO PULSE CURRENT - mA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-90
GREEN
BLUE
COOL WHITE
WARM WHITE
-70
-50
-30 -10 10
30
OFF-AXIS ANGLE (°)
50
70
90
Figure 9. Relative Luminous Flux vs. Mono Pulse Current for InGaN
Figure 10. Radiation Pattern for InGaN
400
I
F
- MAX FORWARD CURRENT - mA
DOMINANT WAVELENGTH - nm
350
300
250
200
150
100
50
0
0
10
20
30
40
50
60
70
T
A
- AMBIENT TEMPERATURE - °C
80
90
R
JA
= 50°C/W
R
JA
= 40°C/W
R
JA
= 30°C/W
540
530
520
510
500
490
480
470
460
450
100
150
200
250
300
FORWARD CURRENT - mA
GREEN
BLUE
350
400
Figure 11. Maximum forward current vs. ambient temperature for InGaN
Derated based on T
J
MAX = 110°C, Rq
JA
= 30°C/W / 40°C/W and 50°C/W
Figure 12. Dominant wavelength vs. forward current – InGaN devices
Note: All parametric charts are only applicable for ASMT-Mx00 component level device only.
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