ASMT-QxBE-Nxxxx
Super 0.5W Power PLCC-4
Surface Mount LED Indicator
Data Sheet
Description
The Super 0.5W Power PLCC-4 SMT LED is first Blue &
Green mid-Power PLCC-4 SMT LEDs using InGaN chip
technology. The package can be driven at high current
due to its superior package design. The product is able
to dissipate the heat more efficiently compared to the
Power PLCC-4 SMT LEDs. These LEDs produce higher light
output with better flux performance compared to the
Power PLCC-4 SMT LED.
The Super 0.5W Power PLCC-4 SMT LEDs are designed for
higher reliability, better performance, and operate under
a wide range of environmental conditions. The perfor-
mance characteristics of these new mid-power LEDs
make them uniquely suitable for use in harsh conditions
such as in automotive applications, and in electronics
signs and signals.
To facilitate easy pick and place assembly, the LEDs are
packed in EIA-compliant tape and reel. Every reel is
shipped in single intensity and color bin, to provide close
uniformity.
Features
x
Industry Standard PLCC 4 platform (3.2x2.8x1.9mm)
x
High reliability package with enhanced silicone resin
encapsulation
x
High brightness with optimum flux performance
using InGaN chip technologies
x
Available in Blue and Green color
x
Available in 8mm carrier tape & 7 inch reel
x
Low Thermal Resistance 40°C/W
x
Super wide viewing angle at 120 degree
x
JEDEC MSL 2a
Applications
1. Electronic signs and signals
a. Decorative/Advertising Lighting
b. Channel Lettering
c. Signs Luminaire
d. RGB Backlighting
CAUTION:
ASMT-QXBE-Nxxxx LEDs are ESD sensitive. Please observe appropriate precautions
during handling and processing. Refer to Avago Application Note AN-1142 for additional details.
Package Drawing
0.79 ± 0.3
2.8 ± 0.2
2.2 ± 0.2
A
A
1.9 ± 0.2
0.6 ± 0.3
1.15 ± 0.2
3.6 ± 0.2
3.2 ± 0.2
Ø 2.4
0.97
C
CATHODE
MARKING
C
0.7
Notes:
1. All dimensions in millimeters
2. Lead polarity as shown in figure 13.
3. Terminal finish: Ag plating.
4. Encapsulation material: silicone resin.
Figure 1. Package Drawing
Table 1. Device Selection Guide
Luminous Flux,
)
V[1]
(lm)
Color
Blue
Green
Part Number
ASMT-QBBE-N0B0E
ASMT-QGBE-NFH0E
Min. Flux (lm)
3.4
15.0
Typ. Flux (lm)
4.8
23.0
Max. Flux (lm)
7.0
33.0
0.56
(TYP.)
0.41
(TYP.)
Test Current (mA)
150
150
Dice Technology
InGaN
InGaN
Notes:
1.
)
V
is the total luminous flux output as measured with an integrating sphere at mono pulse conditions.
2. Tolerance = ±12%
Part Numbering System
ASMT–QX
1
BE–NX
2
X
3
X
4
X
5
Packaging
Option
Colour Bin Selection
Max.
Flux
Bin Selection
Min.
Flux
Bin Selection
Color
B - Blue
G - Green
2
Table
2.
Absolute Maximum
Ratings
(T
A
=
25
°C)
Parameters
DC Forward Current
[1]
Peak Forward Current
[2]
Power Dissipation
Reverse Voltage
Junction Temperature
Operating Temperature
Storage Temperature
Notes:
1. Derate Linearly as shown in Figure 6.
2. Duty Factor = 10%, Frequency = 1kHz
ASMT-QWBE-Nxxxx
150 mA
300 mA
513 mW
-4V
125 °C
-40 °C to +110 °C
-40 °C to +110 °C
Table
3. Optical
Characteristics (T
J
=
25
°C)
Peak
Wavelength
λ
PEAK
(nm)
Typ.
459.0
516.5
Color
Blue
Green
Part Number
ASMT-QBBE-Nxxxx
ASMT-QGBE-Nxxxx
Dice
Technology
InGaN
InGaN
Viewing
Dominant
Wavelength λ
D
Angle
2T
½[1]
(nm)
(Degrees)
Typ.
464.5
522.0
Typ.
120
120
Luminous
Efficiency
K
e
(lm/W)
Typ.
10
35
Total Flux /
Luminous Intensity
Φ
V
(lm) / I
V
(cd)
Typ.
2.75
2.75
Notes:
1.
T
½
is the off-axis angle where the luminous intensity is ½ the peak intensity.
Table
4.
Electrical Characteristics (T
J
=
25
°C)
Forward Voltage VF (Volts) @ IF = 150 mA
Part Number
ASMT-QBBE-N0B0E
ASMT-QGBE-NFH0E
Typ.
3.6
3.6
Max.
4.1
4.1
Thermal
Resistance RT
J-P
(°C/W)
40
40
3
1.0
0.9
0.8
0.7
Blue
0.6
0.5
0.4
0.3
0.2
0.1
0.0
380
430
350
300
FORWARD
CURRENT
-
mA
250
200
150
100
50
480
530
580
630
WAVELENGTH
-
nm
680
730
780
0
0
1
2
3
FORWARD
VOLTAGE
-
V
4
5
Green
RELATIVE INTENSITY
Figure
2. Relative
Intensity Vs. Wavelength
Figure
3.
Forward Current Vs. Forward Voltage
1.2
RELATIVE LUMINOUS FLUX
(NORMALIZED AT 150 mA)
RELATIVE
LUMINOUS FLUX
(NORMALIZED AT
25°C)
1
0.8
0.6
0.4
0.2
0
0
30
60
90
120
DC FORWARD CURRENT - mA
150
1.2
1.1
1
0.9
0.8
0.7
-50
0.6
0
50
100
JUNCTION TEMPERATURE - °C
150
Figure
4. Relative
Flux Vs. Forward Current
Figure
5. Relative
Flux Vs. Temperature
160
140
120
CURRENT - mA
100
80
60
40
20
0
0
20
40
60
80
TEMPERATURE (°C)
100
120
RT
JA
=
90°C/W
CURRENT - mA
RT
JA
= 110°C/W
160
140
120
100
80
60
40
20
0
0
20
40
60
80
TEMPERATURE (°C)
100
120
RT
JP
=
40°C/W
Figure
6a.
Maximum Forward Current Vs. Ambient Temperature.
DeratedBased on T
JMAX
= 125°C,
Rθ
J-A
=110°C/W &
90°C/W
Figure
6b.
Maximum Forward Current Vs. Solder Point Temperature.
Derated Based on T
JMAX
= 125°C,
Rθ
J-P
=40°C/W.
4
0.40
D
=
0.05
0.10
0.25
0.50
1
0.40
D
=
0.30
CURRENT
-
A
t
p
T
t
p
I
F
T
0.30
CURRENT
-
A
0.20
0.20
D
=
0.05
0.10
0.25
0.50
1
0.10
t
D
=
p
T
0.00
0.00001 0.0001 0.001
0.01
0.1
t
p
- Time -
(s)
0
t
p
I
F
T
10
100
0.10
0.00
0.00001 0.0001 0.001
0.01
0.1
t
p
- Time -
(s)
0
10
100
Figure
7a.
Maximum Pulse Current Vs. Ambient Temperature.
Derated Based on T
A
=
25°C, Rθ
J-A
=110°C/W.
Figure
7b.
Maximum Pulse Current Vs. Ambient Temperature.
Derated Based on T
A
=
85°C, Rθ
J-P
=110°C/W.
540
DOMINANT WAVELENGTH
-
nm
530
520
510
500
490
480
470
460
0
30
60
90
FORWARD
CURRENT
-
mA
120
150
FORWARD
VOLTAGE SHIFT
-
V-
-
0.25
0.2
0.15
0.1
0.05
-50
-25
0
0
-0.05
-0.1
-0.15
-0.2
-0.25
25
50
75
100
T
J
-
JUNCTION
TEMPERATURE -
°C
Figure
9.
Forward Voltage Shift Vs. Temperature.
Figure
8.
Dominant wavelength Vs. forward current.
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-90
NORMALIZED
INTENSITY
-60
-30
0
30
60
ANGULAR DISPLACEMENT
-
DEGREES
90
Figure 10.
Radiation
Pattern
5
电源技术
