AT45DB161E
16-Mbit DataFlash (with Extra 512-Kbits), 2.3V or 2.5V Minimum
SPI Serial Flash Memory
DATASHEET
Features
Single 2.3V - 3.6V or 2.5V - 3.6V supply
Serial Peripheral Interface (SPI) compatible
Supports SPI modes 0 and 3
Supports RapidS
™
operation
Up to 85MHz
Low-power read option up to 15MHz
Clock-to-output time (t
V
) of 6ns maximum
512 bytes per page
528 bytes per page (default)
Page size can be factory pre-configured for 512 bytes
Allows receiving data while reprogramming the main memory array
Byte/Page Program (1 to 512/528 bytes) directly into main memory
Buffer Write
Buffer to Main Memory Page Program
Page Erase (512/528 bytes)
Block Erase (4KB)
Sector Erase (128KB)
Chip Erase (16-Mbits)
Continuous read capability through entire array
User configurable page size
Two fully independent SRAM data buffers (512/528 bytes)
Flexible programming options
Flexible erase options
Program and Erase Suspend/Resume
Advanced hardware and software data protection features
Individual sector protection
Individual sector lockdown to make any sector permanently read-only
64 bytes factory programmed with a unique identifier
64 bytes user programmable
128-byte, One-Time Programmable (OTP) Security Register
Hardware and software controlled reset options
JEDEC Standard Manufacturer and Device ID Read
Low-power dissipation
400nA Ultra-Deep Power-Down current (typical)
3μA Deep Power-Down current (typical)
25μA Standby current (typical at 20MHz)
11mA Active Read current (typical)
Endurance: 100,000 program/erase cycles per page minimum
Data retention: 20 years
Complies with full industrial temperature range
Green (Pb/Halide-free/RoHS compliant) packaging options
8-lead SOIC (0.150" wide and 0.208" wide)
8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
9-ball Ultra-thin UBGA (6 x 6 x 0.6mm)
8782G–DFLASH–10/2013
Description
The Adesto
®
AT45DB161E is a 2.3V or 2.5V minimum, serial-interface sequential access Flash memory ideally suited for
a wide variety of digital voice, image, program code, and data storage applications. The AT45DB161E also supports the
RapidS serial interface for applications requiring very high speed operation. Its 17,301,504 bits of memory are organized
as 4,096 pages of 512 bytes or 528 bytes each. In addition to the main memory, the AT45DB161E also contains two
SRAM buffers of 512/528 bytes each. The buffers allow receiving of data while a page in the main memory is being
reprogrammed. Interleaving between both buffers can dramatically increase a system's ability to write a continuous data
stream. In addition, the SRAM buffers can be used as additional system scratch pad memory, and E
2
PROM emulation
(bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation.
Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the
Adesto DataFlash
®
uses a serial interface to sequentially access its data. The simple sequential access dramatically
reduces active pin count, facilitates simplified hardware layout, increases system reliability, minimizes switching noise,
and reduces package size. The device is optimized for use in many commercial and industrial applications where
high-density, low-pin count, low-voltage, and low-power are essential.
To allow for simple in-system re-programmability, the AT45DB161E does not require high input voltages for
programming. The device operates from a single 2.3V to 3.6V or 2.5V to 3.6V power supply for the erase and program
and read operations. The AT45DB161E is enabled through the Chip Select pin (CS) and accessed via a 3-wire interface
consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).
All programming and erase cycles are self-timed.
1.
Pin Configurations and Pinouts
Figure 1-1. Pinouts
8-lead SOIC
Top View
SI
SCK
RESET
CS
1
2
3
4
8
7
6
5
SO
GND
V
CC
WP
SI
SCK
RESET
CS
8-pad UDFN
Top View
1
2
3
4
8-ball UBGA
Top View
SO
7
GND
6
V
CC
5
WP
8
SCK
GND
V
CC
CS
NC
WP
SO
SI
RST
Note:
1.
The metal pad on the bottom of the UDFN package is not internally connected to a voltage potential.
This pad can be a “no connect” or connected to GND.
AT45DB161E
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Table 1-1.
Pin Configurations
Asserted
State
Symbol
Name and Function
Chip Select:
Asserting the CS pin selects the device. When the CS pin is deasserted, the
device will be deselected and normally be placed in the standby mode (not Deep Power-Down
mode) and the output pin (SO) will be in a high-impedance state. When the device is
deselected, data will not be accepted on the input pin (SI).
A high-to-low transition on the CS pin is required to start an operation and a low-to-high
transition is required to end an operation. When ending an internally self-timed operation such
as a program or erase cycle, the device will not enter the standby mode until the completion of
the operation.
Serial Clock:
This pin is used to provide a clock to the device and is used to control the flow of
data to and from the device. Command, address, and input data present on the SI pin is
always latched on the rising edge of SCK, while output data on the SO pin is always clocked
out on the falling edge of SCK.
Serial Input:
The SI pin is used to shift data into the device. The SI pin is used for all data input
including command and address sequences. Data on the SI pin is always latched on the rising
edge of SCK. Data present on the SI pin will be ignored whenever the device is deselected (CS
is deasserted).
Serial Output:
The SO pin is used to shift data out from the device. Data on the SO pin is
always clocked out on the falling edge of SCK. The SO pin will be in a high-impedance state
whenever the device is deselected (CS is deasserted).
Write Protect:
When the WP pin is asserted, all sectors specified for protection by the Sector
Protection Register will be protected against program and erase operations regardless of
whether the Enable Sector Protection command has been issued or not. The WP pin functions
independently of the software controlled protection method. After the WP pin goes low, the
contents of the Sector Protection Register cannot be modified.
Type
CS
Low
Input
SCK
—
Input
SI
—
Input
SO
—
Output
WP
If a program or erase command is issued to the device while the WP pin is asserted, the device
will simply ignore the command and perform no operation. The device will return to the idle
state once the CS pin has been deasserted. The Enable Sector Protection command and the
Sector Lockdown command, however, will be recognized by the device when the WP pin is
asserted.
The WP pin is internally pulled-high and may be left floating if hardware controlled protection
will not be used. However, it is recommended that the WP pin also be externally connected to
V
CC
whenever possible.
Reset:
A low state on the reset pin (RESET) will terminate the operation in progress and reset
the internal state machine to an idle state. The device will remain in the reset condition as long
as a low level is present on the RESET pin. Normal operation can resume once the RESET pin
is brought back to a high level.
The device incorporates an internal power-on reset circuit, so there are no restrictions on the
RESET pin during power-on sequences. If this pin and feature is not utilized, then it is
recommended that the RESET pin be driven high externally.
Low
Input
RESET
Low
Input
V
CC
GND
Device Power Supply:
The V
CC
pin is used to supply the source voltage to the device.
Operations at invalid V
CC
voltages may produce spurious results and should not be attempted.
Ground:
The ground reference for the power supply. GND should be connected to the system
ground.
—
—
Power
Ground
AT45DB161E
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2.
Block Diagram
Figure 2-1. Block Diagram
WP
Flash Memory Array
Page (512/528 bytes)
Buffer 1 (512/528 bytes)
Buffer 2 (512/528 bytes)
SCK
CS
RESET
V
CC
GND
SI
I/O Interface
SO
AT45DB161E
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3.
Memory Array
To provide optimal flexibility, the AT45DB161E memory array is divided into three levels of granularity comprising of
sectors, blocks, and pages.
Figure 3-1, Memory Architecture Diagram
illustrates the breakdown of each level and details
the number of pages per sector and block. Program operations to the DataFlash can be done at the full page level or at
the byte level (a variable number of bytes). The erase operations can be performed at the chip, sector, block, or page
level.
Figure 3-1. Memory Architecture Diagram
Sector Architecture
Sector 0a = 8 pages
4,096/4,224 bytes
Block Architecture
Sector 0a
Block 0
Block 1
Block 2
Page Architecture
8 Pages
Page 0
Page 1
Sector 0b = 248 pages
126,976/130,944 bytes
Sector 0b
Block 0
Page 6
Block 30
Page 7
Page 8
Page 9
Sector 1 = 256 pages
131,072 /135,168 bytes
Block 31
Block 33
Sector 2 = 256 pages
131,072/135,168 bytes
Sector 1
Block 1
Block 32
Page 14
Page 15
Block 62
Block 63
Block 64
Page 16
Page 17
Page 18
Sector 15 = 256 pages
131,072/135,168 bytes
Sector 2
Sector 14 = 256 pages
131,072/135,168 bytes
Block 65
Block 510
Block 511
Page 4,094
Page 4,095
Block = 4,096/4,224 bytes
Page = 512/528 bytes
AT45DB161E
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