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Features

•

Low-voltage and Standard-voltage Operation

•

– 2.7 (V

= 2.7V to 5.5V)

– 1.8 (V

= 1.8V to 5.5V)

User Selectable Internal Organization

– 16K: 2048 x 8 or 1024 x 16

Three-wire Serial Interface

Sequential Read Operation

Schmitt Trigger, Filtered Inputs for Noise Suppression

2 MHz Clock Rate (5V) Compatibility

Self-timed Write Cycle (10 ms max)

High Reliability

– Endurance: 1 Million Write Cycles

– Data Retention: 100 Years

Automotive Devices Available

8-lead JEDEC PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin Mini-MAP (MLP 2x3), and 8-

lead TSSOP Packages

Die Sales: Wafer Form, Waffle Pack and Bumped Wafers

Three-wire

Serial

EEPROM

16K

(2048 x 8 or 1024 x 16)

Description

The AT93C86A provides 16384 bits of serial electrically erasable programmable read

only memory (EEPROM), organized as 1024 words of 16 bits each when the ORG pin

is connected to V

and 2048 words of eight bits each when it is tied to ground. The

device is optimized for use in many industrial and commercial applications where low-

power and low-voltage operations are essential. The AT93C86A is available in space

saving 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead Ultra Thin

Mini-MAP (MLP 2x3)

, and 8-

lead TSSOP packages.

AT93C86A

Table 1.

Pin Configurations

Pin Name

GND

VCC

ORG

Function

Chip Select

Serial Data Clock

Serial Data Input

Serial Data Output

Ground

Power Supply

Internal Organization

No Connect

8-lead

Ultra Thin Mini-MAP (MLP

2x3)

VCC

ORG

GND

8-lead PDIP

VCC

ORG

GND

8-lead SOIC

VCC

ORG

GND

8-lead TSSOP

VCC

ORG

GND

Bottom View

Rev. 3408H–SEEPR–1/07

The AT93C86A is enabled through the Chip Select pin (CS), and accessed via a three-

wire serial interface consisting of Data Input (DI), Data Output (DO), and Shift Clock

(SK). Upon receiving a Read instruction at DI, the address is decoded and the data is

clocked out serially on the data output pin DO. The Write cycle is completely self-timed

and no separate Erase cycle is required before Write. The Write cycle is only enabled

when the part is in the Erase/Write Enable state. When CS is brought “high” following

the initiation of a Write cycle, the DO pin outputs the Ready/Busy status of the part. The

AT93C86A is available in a 2.7V to 5.5V version.

Absolute Maximum Ratings*

Operating Temperature......................................−55°C to +125°C

Storage Temperature

.........................................−65°C

to +150°C

Voltage on any Pin

with Respect to Ground

........................................ −1.0V

to +7.0V

Maximum Operating Voltage .......................................... 6.25V

DC Output Current........................................................ 5.0 mA

*NOTICE:

Stresses beyond those listed under “Absolute

Maximum Ratings” may cause permanent dam-

age to the device. This is a stress rating only and

functional operation of the device at these or any

other conditions beyond those indicated in the

operational sections of this specification is not

implied. Exposure to absolute maximum rating

conditions for extended periods may affect

device reliability

Figure 1.

Block Diagram

Vcc

GND

MEMORY ARRAY

ORG

2048 x 8

1024 x 16

ADDRESS

DECODER

DATA

MODE

DECODE

LOGIC

OUTPUT

BUFFER

CLOCK

GENERATOR

Note:

When the ORG pin is connected to Vcc, the x 16 organization is selected. When it is connected to ground, the x 8 organization

is selected. If the ORG pin is left unconnected and the application does not load the input beyond the capability of the internal 1

Meg ohm pullup, then the x 16 organization is selected.

AT93C86A

3408H–SEEPR–1/07

AT93C86A

Table 2.

Pin Capacitance

(1)

Applicable over recommended operating range from T

= 25°C, f = 1.0 MHz, V

= +5.0V (unless otherwise noted)

Symbol

OUT

Note:

Test Conditions

Output Capacitance (DO)

Input Capacitance (CS, SK, DI)

1. This parameter is characterized and is not 100% tested.

Max

Units

Conditions

OUT

= 0V

Table 3.

DC Characteristics

Applicable over recommended operating range from: T

−40°C

to +85°C, V

= +1.8V to +5.5V,

−40°C

to +125°C, V

= +1.8V to +5.5V (unless otherwise noted)

Symbol

CC1

CC2

CC3

SB1

SB2

SB3

IL1(1)

IH1(1)

IL2(1)

IH2(1)

OL1

OH1

OL2

OH2

Note:

Parameter

Supply Voltage

Supply Current

Standby Current

Input Leakage

Output Leakage

Input Low Voltage

Input High Voltage

Input Low Voltage

Input High Voltage

Output Low Voltage

Output High Voltage

Output Low Voltage

Output High Voltage

= 5.0V

= 1.8V

= 2.7V

= 5.0V

= 0V to V

2.7V

≤

5.5V

1.8V

≤

2.7V

≤

5.5V

1.8V

≤

2.7V

= 2.1 mA

= –0.4 mA

= 0.15 mA

= –100

µA

– 0.2

2.4

0.2

--−0.6

2.0

−0.6

x 0.7

READ at 1.0 MHz

WRITE at 1.0 MHz

CS = 0V

Test Condition

Min

1.8

2.7

4.5

0.5

6.0

0.1

Typ

Max

5.5

2.0

0.1

10.0

3.0

0.8

+ 1

x 0.3

+ 1

0.4

Unit

µA

1. V

min and V

max are reference only and are not tested.

3408H–SEEPR–1/07

Table 4.

AC Characteristics

Applicable over recommended operating range from T

−40°C

to + 85°C, T

−40°C

to +125°C, V

= As Specified,

CL = 1 TTL Gate and 100 pF (unless otherwise noted)

Symbol

Parameter

SK Clock

Frequency

SK High Time

SK Low Time

Minimum CS

Low Time

CS Setup Time

DI Setup Time

CS Hold Time

DI Hold Time

Output Delay to “1”

Output Delay to “0”

CS to Status Valid

CS to DO in High

Impedance

Write Cycle Time

5.0V, 25°C

Test Condition

4.5V

≤

5.5V

2.7V

≤

5.5V

1.8V

≤

5.5V

2.7V

≤

5.5V

1.8V

≤

5.5V

2.7V

≤

5.5V

1.8V

≤

5.5V

2.7V

≤

5.5V

1.8V

≤

5.5V

Relative to SK

AC Test

CS = V

2.7V

≤

5.5V

1.8V

≤

5.5V

2.7V

≤

5.5V

1.8V

≤

5.5V

2.7V

≤

5.5V

1.8V

≤

5.5V

2.7V

≤

5.5V

1.8V

≤

5.5V

2.7V

≤

5.5V

1.8V

≤

5.5V

1.8V

≤

5.5V

0.1

2.7V

≤

5.5V

1.8V

≤

5.5V

2.7V

≤

5.5V

1.8V

≤

5.5V

Min

250

1000

250

1000

250

1000

200

100

400

100

400

250

1000

250

1000

250

1000

150

400

Typ

Max

0.25

Units

MHz

SKH

SKL

CSS

DIS

CSH

DIH

PD1

PD0

Endurance

(1)

Write Cycles

Note:

1. This parameter is ensured by characterization.

AT93C86A

3408H–SEEPR–1/07

AT93C86A

Table 5.

Instruction Set for the AT93C86A

Address

Instruction

READ

EWEN

ERASE

WRITE

ERAL

WRAL

Op Code

– A

11XXXXXXXXX

– A

10XXXXXXXXX

01XXXXXXXXX

x 16

– A

11XXXXXXXX

– A

10XXXXXXXX

01XXXXXXXX

– D

Data

x 16

Comments

Reads data stored in memory,

at specified address.

Write enable must precede all

programming modes.

Erases memory location A

– A

Writes memory location A

– A

Erases all memory locations.

Valid only at V

= 4.5V to 5.5V.

Writes all memory locations.

Valid when V

= 4.5V to 5.5V and

Disable Register cleared.

Disables all programming

instructions.

EWDS

00XXXXXXXXX

00XXXXXXXX

Functional

Description

The AT93C86A is accessed via a simple and versatile three-wire serial communication

interface. Device operation is controlled by seven instructions issued by the host pro-

cessor.

A valid instruction starts with a rising edge of CS

and consists of a Start Bit

(logic “1”) followed by the appropriate Op Code and the desired memory address

location.

READ (READ):

The Read (READ) instruction contains the address code for the mem-

ory location to be read. After the instruction and address are decoded, data from the

selected memory location is available at the serial output pin DO. Output data changes

are synchronized with the rising edges of serial clock SK. It should be noted that a

dummy bit (logic “0”) precedes the 8- or 16-bit data output string. The AT93C86A sup-

ports sequential read operations. The device will automatically increment the internal

address pointer and clock out the next memory location as long as CS is held high. In

this case, the dummy bit (logic “0”) will not be clocked out between memory locations,

thus allowing for a continuous stream of data to be read.

ERASE/WRITE (EWEN):

To assure data integrity, the part automatically goes into the

Erase/Write Disable (EWDS) state when power is first applied. An Erase/Write Enable

(EWEN) instruction must be executed first before any programming instructions can be

carried out. Please note that once in the EWEN state, programming remains enabled

until an EWDS instruction is executed or V

power is removed from the part.

ERASE (ERASE):

The Erase (ERASE) instruction programs all bits in the specified

memory location to the logical “1” state. The self-timed erase cycle starts once the

ERASE instruction and address are decoded. The DO pin outputs the Ready/Busy sta-

tus of the part if CS is brought high after being kept low for a minimum of 250 ns (t

). A

logic “1” at pin DO indicates that the selected memory location has been erased, and the

part is ready for another instruction.

WRITE (WRITE):

The Write (WRITE) instruction contains the 8 or 16 bits of data to be

written into the specified memory location. The self-timed programming cycle t

starts

after the last bit of data is received at serial data input pin DI. The DO pin outputs the

Ready/Busy status of the part if CS is brought high after being kept low for a minimum of

3408H–SEEPR–1/07

参数对比

与AT93C86A-10PU-2.7相近的元器件有：AT93C86A-10PU-1.8、AT93C86A_07、AT93C86AY6-10YH-1.8、AT93C86A-10TU-1.8、AT93C86AY1-10YU-1.8、AT93C86A-W1.8-11、AT93C86A-10SU-1.8、AT93C86A-10TU-2.7、AT93C86A-10SU-2.7。描述及对比如下：

型号	AT93C86A-10PU-2.7	AT93C86A-10PU-1.8	AT93C86A_07	AT93C86AY6-10YH-1.8	AT93C86A-10TU-1.8	AT93C86AY1-10YU-1.8	AT93C86A-W1.8-11	AT93C86A-10SU-1.8	AT93C86A-10TU-2.7	AT93C86A-10SU-2.7
描述	1K X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8	1K X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8	1K X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8	1K X 16 MICROWIRE BUS SERIAL EEPROM, DSO8	1K X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8	1K X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8	1K X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8	1K X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8	1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8	1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
内存宽度	16	16	16	16	16	16	16	16	16	16
功能数量	1	1	1	1	1	1	1	1	1	1
组织	1KX16	1KX16	1K X 16	1KX16	1KX16	1KX16	1KX16	1KX16	1KX16	1KX16
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	NO LEAD	GULL WING	NO LEAD	NO LEAD	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	UPPER	DUAL	DUAL	DUAL
是否无铅	不含铅	不含铅	-	不含铅	不含铅	不含铅	含铅	不含铅	不含铅	不含铅
是否Rohs认证	符合	符合	-	符合	符合	符合	-	符合	符合	符合
厂商名称	Atmel (Microchip)	Atmel (Microchip)	-	Atmel (Microchip)	Atmel (Microchip)	-	-	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)
零件包装代码	DIP	DIP	-	SON	TSSOP	MSOP	DIE	SOIC	TSSOP	SOIC
包装说明	DIP, DIP8,.3	DIP, DIP8,.3	-	2 X 3 MM, 0.50 MM PITCH, GREEN, MO-229, MLP-8	TSSOP, TSSOP8,.25	VSON, SOLCC8,.2,25	DIE,	SOP, SOP8,.25	TSSOP, TSSOP8,.25	SOP, SOP8,.25
针数	8	8	-	8	8	8	-	8	8	8
Reach Compliance Code	compli	compli	-	unknow	compli	compli	unknow	compli	compli	compli
ECCN代码	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
备用内存宽度	8	8	-	8	8	8	8	8	8	8
数据保留时间-最小值	100	100	-	100	100	100	-	100	100	100
耐久性	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	-	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	-	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles	1000000 Write/Erase Cycles
JESD-30 代码	R-PDIP-T8	R-PDIP-T8	-	R-XDSO-N8	R-PDSO-G8	R-XDSO-N8	X-XUUC-N	R-PDSO-G8	R-PDSO-G8	R-PDSO-G8
JESD-609代码	e3	e3	-	e4	e3	e3	-	e3	e3	e3
长度	9.271 mm	9.271 mm	-	3 mm	4.4 mm	4.9 mm	-	4.9 mm	4.4 mm	4.9 mm
内存密度	16384 bi	16384 bi	-	16384 bi	16384 bi	16384 bi	16384 bi	16384 bi	16384 bi	16384 bi
内存集成电路类型	EEPROM	EEPROM	-	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM	EEPROM
端子数量	8	8	8	8	8	8	-	8	8	8
字数	1024 words	1024 words	-	1024 words	1024 words	1024 words	1024 words	1024 words	1024 words	1024 words
字数代码	1000	1000	-	1000	1000	1000	1000	1000	1000	1000
工作模式	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	85 °C	-	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	-	UNSPECIFIED	PLASTIC/EPOXY	UNSPECIFIED	UNSPECIFIED	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	DIP	DIP	-	VSON	TSSOP	VSON	DIE	SOP	TSSOP	SOP
封装等效代码	DIP8,.3	DIP8,.3	-	SOLCC8,.11,20	TSSOP8,.25	SOLCC8,.2,25	-	SOP8,.25	TSSOP8,.25	SOP8,.25
封装形状	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	UNSPECIFIED	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	IN-LINE	-	SMALL OUTLINE, VERY THIN PROFILE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE, VERY THIN PROFILE	UNCASED CHIP	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	SMALL OUTLINE
并行/串行	PARALLEL	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	SERIAL	PARALLEL
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	-	260	260	260	-	260	260	260
电源	3/5 V	2/5 V	-	2/5 V	2/5 V	2/5 V	-	2/5 V	3/5 V	3/5 V
认证状态	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	5.334 mm	5.334 mm	-	0.6 mm	1.2 mm	0.9 mm	-	1.75 mm	1.2 mm	1.75 mm
串行总线类型	MICROWIRE	MICROWIRE	-	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE	MICROWIRE
最大待机电流	0.00001 A	1e-7 A	-	1e-7 A	1e-7 A	1e-7 A	-	1e-7 A	0.00001 A	0.00001 A
最大压摆率	0.002 mA	0.002 mA	-	0.002 mA	0.002 mA	0.002 mA	-	0.002 mA	0.002 mA	0.002 mA
最大供电电压 (Vsup)	5.5 V	5.5 V	-	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	2.7 V	1.8 V	-	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	2.7 V	2.7 V
标称供电电压 (Vsup)	5 V	2.7 V	-	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	5 V	5 V
表面贴装	NO	NO	-	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
端子面层	Matte Tin (Sn)	Matte Tin (Sn)	-	Nickel/Palladium/Gold (Ni/Pd/Au)	Matte Tin (Sn)	Matte Tin (Sn) - annealed	-	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
端子节距	2.54 mm	2.54 mm	-	0.5 mm	0.65 mm	0.65 mm	-	1.27 mm	0.65 mm	1.27 mm
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	-	40	40	40	-	40	40	40
宽度	7.62 mm	7.62 mm	-	2 mm	3 mm	3 mm	-	3.9 mm	3 mm	3.9 mm
最长写入周期时间 (tWC)	10 ms	10 ms	-	10 ms	10 ms	10 ms	10 ms	10 ms	10 ms	10 ms
写保护	SOFTWARE	SOFTWARE	-	SOFTWARE	SOFTWARE	SOFTWARE	-	SOFTWARE	SOFTWARE	SOFTWARE