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ATTL7582AC

Telecom Circuit, 1-Func, PDIP16, PLASTIC, DIP-16

器件类别:无线/射频/通信    电信电路   

厂商名称:Zarlink Semiconductor (Microsemi)

厂商官网:http://www.zarlink.com/

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器件参数
参数名称
属性值
厂商名称
Zarlink Semiconductor (Microsemi)
包装说明
DIP,
Reach Compliance Code
unknown
Is Samacsys
N
JESD-30 代码
R-PDIP-T16
功能数量
1
端子数量
16
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装形状
RECTANGULAR
封装形式
IN-LINE
认证状态
Not Qualified
座面最大高度
5.08 mm
标称供电电压
5 V
表面贴装
NO
电信集成电路类型
TELECOM CIRCUIT
温度等级
INDUSTRIAL
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
宽度
7.62 mm
Base Number Matches
1
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NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS
NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS
L7582 Tip Ring Access Switch
Features
Small size/surface-mount packaging
Monolithic IC reliability
Low impulse noise
Make-before-break, break-before-make operation
Clean, bounce-free switching
Low, matched ON-resistance
Built-in current limiting, thermal shutdown, and SLIC
protection
5 V only operation, very low power consumption
Battery monitor, all OFF state upon loss of battery
No EMI
TR
AN
NO
SF
T
RE
ER
NE CO
R
Only one external protector required
Latched logic level inputs, no drive circuitry
Applications
Central office
DLC
PBX
DAML
HFC/FITL
Description
The L7582 Tip Ring Access Switch is a monolithic solid-
state device that provides the switching
functionality of a 2 form C switch.
The L7582 is designed to provide power ringing access to
tip and ring in central office, digital loop carrier, private
branch exchange, digitally added main line, and hybrid
fiber coax/fiber-in-the-loop analog line card applications.
Document ID#
080967
Rev:
A
Distribution:
Public
Date:
Version:
Oct 31, 2002
1
W MM
E
D
DE E
SI ND
D
GN E D
E
VI
S FO
C
R
E
An additional pair of solid-state contacts provides access
to the telephone loop for line test access or message wait-
ing in the PBX application.
The L7582 has four states: the idle talk state (line break
switches closed, ringing and loop access switches open),
the power ringing state (ringing access switches closed,
line break and loop access switches open), loop access
state (loop access switches closed, line break and ringing
access switches open), and an all OFF state.
The L7582 offers break-before-make or make-before-
break switching, with simple logic level input control.
Because of the solid-state construction, voltage transients
generated when switching into an inductive ringing load
during ring cadence or ring trip are minimized, possibly
eliminating the need for external zero cross switching cir-
cuitry. State control is via logic level inputs so no addi-
tional driver circuitry is required.
The line break switch is a linear switch that has exception-
ally low ON-resistance and an excellent ON-resistance
matching characteristic. The ringing access switch has a
breakdown voltage rating >480 V which is sufficiently
high, with proper protection, to prevent breakdown in the
presence of a transient fault condition (i.e., passing the
transient on to the ringing generator).
Incorporated into the L7582Axx is a diode bridge/SCR
clamping circuit, current-limiting circuitry, and a thermal
shutdown mechanism to provide protection to the SLIC
device and subsequent circuitry during fault conditions
(see Figure 1). Positive and negative lightning is reduced
by the current-limiting circuitry and steered to ground via
diodes and the integrated SCR. Power cross is also
reduced by the current-limiting and thermal shutdown cir-
cuits.
L7582 Tip Ring Access Switch
Data Sheet
November 1999
Description
(continued)
The L7582Bxx version provides only an integrated diode
bridge along with current limiting and thermal shutdown as
shown in Figure 2. This will cause positive faults to be
directed to ground and negative faults to battery. In either
polarity, faults are reduced by the current-limit and/or ther-
mal shutdown mechanisms.
To protect the L7582 from an overvoltage fault condition,
use of a secondary protector is required. The secondary pro-
tector must limit the voltage seen at the tip/ring terminals to
prevent the breakdown voltage of the switches from being
exceeded. To minimize stress on the solid-state contacts, use
of a foldback- or crowbar- type secondary protector is rec-
ommended. With proper choice of secondary protection, a
line card using the L7582 will meet all relevant ITU-T,
LSSGR, FCC, or
UL*
protection requirements.
The L7582 operates from a 5 V supply only. This
gives the device extremely low idle and active power dissi-
pation and allows use with virtually any range of battery
voltage. This makes the L7582 especially appropriate for
remote power applications such as DAML or FOC/FITL or
other Bellcore TA 909 applications where power dissipation
is particularly critical.
A battery voltage is also used by the L7582, only as a refer-
ence for the integrated protection circuit. The L7582 will
enter an all OFF state upon loss of battery.
Pin Information
F
GND
T
BAT
T
LINE
T
RINGING
T
ACCESS
1
2
SW1
3
SW3
4
SW5
NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS
SCR
AND
TRIP
CKT
SW2
16
15
14
SW4
13
SW6
12
11
CONTROL
LOGIC
10
9
V
BAT
NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS
R
BAT
R
LINE
R
RINGING
R
ACCESS
LATCH
IN
RING
IN
ACCESS
W MM
E
D
DE E
SI ND
D
GN E D
E
VI
S FO
C
R
E
5
V
DD
6
T
SD
7
8
D
GND
F
GND
1
2
3
4
5
T
BAT
SW1
SW3
SW5
T
LINE
T
RINGING
T
ACCESS
V
DD
6
T
SD
D
GND
7
8
12-2306.i (F)
Note: Shown with A version protection. The 16-pin SOG is available with
either A or B version protection.
Figure 1. 16-Pin, Plastic SOG
TR
AN
NO
SF
T
RE
ER
NE CO
R
During power ringing, to turn on and maintain the ON state,
the ring access switch will draw a nominal 2 mA or 4 mA
from the ring generator.
16
15
SW2
14
SW4
13
SW6
12
11
CONTROL
LOGIC
10
9
V
BAT
R
BAT
R
LINE
R
RINGING
R
ACCESS
LATCH
IN
RING
IN
ACCESS
The L7582 device is packaged in a 16-pin, plastic DIP pack-
age (L7582AC/BC) and a 16-pin, plastic SOG package
(L7582AAE/BAE). The L7582AAE/BAE are pin compati-
ble with the L7542AAE/BAE.
*UL is a registered trademark of Underwriters Laboratories, Inc.
12-2306.c (F)
Note: Shown with B version protection. The 16-pin DIP is available with
either A or B version protection.
Figure 2. 16-Pin, Plastic DIP
2
Data Sheet
November 1999
L7582 Tip Ring Access Switch
Pin Information
(continued)
Table 1. Pin Descriptions
DIP SOG
1
1
Symbol
Description
F
GND
Fault ground.
T
BAT
T
LINE
T
RINGING
T
ACCESS
V
DD
T
SD
Connect to TIP on SLIC side.
Connect to TIP on line side.
Connect to return ground for ringing
generator.
Test access.
5 V supply.
DIP
16
15
14
13
12
11
SOG
16
15
14
13
12
11
Symbol
V
BAT
R
BAT
R
LINE
R
RINGING
Description
Battery voltage. Used as a refer-
ence for protection circuit.
Connect to RING on SLIC side.
Connect to RING on line side.
Connect to ringing generator.
NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS
NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS
2
3
4
5
6
7
2
3
4
5
6
7
8
8
D
GND
Temperature shutdown pin. Can be
used as a logic level input or output.
See Table 13, Truth Table, and the
Switching Behavior section of this
data sheet for input pin description.
As an output, will read 5 V when
device is in its operational mode and
0 V in the thermal shutdown mode.
To disable the thermal shutdown
mechanism, tie this pin to 5 V (not
recommended).
Digital ground.
Absolute Maximum Ratings
TR
AN
NO
SF
T
RE
ER
NE CO
R
Min
–40
–40
5
Max
110
150
95
260
7
–85
7
330
330
Stresses in excess of the absolute maximum ratings can
cause permanent damage to the device. These are absolute
stress ratings only. Functional operation of the device is not
implied at these or any other conditions in excess of those
given in the operational sections of the data sheet. Exposure
to absolute maximum ratings for extended periods can
adversely affect device reliability.
Table 2. Absolute Maximum Ratings Parameters
Parameter
Operating Temperature Range
Storage Temperature Range
Relative Humidity Range
Pin Soldering Temperature (t = 10
s max)
5 V Power Supply
Battery Supply
Logic Input Voltage
Input-to-output Isolation
Pole-to-pole Isolation
W MM
E
D
DE E
SI ND
D
GN E D
E
VI
S FO
C
R
E
10
10
9
9
R
ACCESS
Test access.
LATCH Data latch control, active-high,
transparent low.
IN
RING
Logic level input switch control.
IN
ACCESS
Logic level input switch control.
Handling Precautions
Unit
°C
°C
%
°C
V
V
V
V
V
Although protection circuitry has been designed into this
device, proper precautions should be taken to avoid exposure
to electrostatic discharge (ESD) during handling and mount-
ing. Legerity employs a human-body model (HBM) and a
charged-device model (CDM) for ESD-susceptibility testing
and protection design evaluation. ESD voltage thresholds are
dependent on the circuit parameters used to define the
model. No industry-wide standard has been adopted for
CDM. However, a standard HBM (resistance = 1500
Ω,
capacitance = 100 pF) is widely used and therefore can be
used for comparison purposes. The HBM ESD threshold
presented here was obtained by using these circuit parame-
ters.
Table 3. HBM ESD Threshold Voltage
Device
L7582
Rating
1000 V
3
L7582 Tip Ring Access Switch
Data Sheet
November 1999
Electrical Characteristics
T
A
= –40
°C
to +85
°C,
unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of
engineering evaluations. Typical values are for information purposes only and are not part of the testing requirements.
NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS
NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS
Table 4. Power Supply Specifications
Supply
V
DD
V
BAT*
Min
4.5
–19
Typ
5
Max
5.5
–72
Unit
V
V
Table 5. Break Switches, 1 and 2
Parameter
OFF-state Leakage
Current:
+25
°C
+85
°C
–40
°C
ON-resistance
(SW1, SW2):
+25
°C
+85
°C
–40
°C
ON-resistance Match
Test Condition
W MM
E
D
DE E
SI ND
D
GN E D
E
VI
S FO
C
R
E
Measure
Min
Iswitch
Iswitch
Iswitch
V
ON
V
ON
V
ON
Magnitude
R
ON
SW1 – R
ON
SW2
V
ON
Iswitch
Iswitch
Iswitch
80
Iswitch
Iswitch
Iswitch
* V
BAT
is used only as a reference for internal protection circuitry. If V
BAT
rises above –10 V, the device will enter an all OFF state and will remain in the all
OFF state until the battery voltage drops below –15 V.
Typ
Max
Unit
Vswitch (differential) = –320 V to Gnd
Vswitch (differential) = –60 V to +260 V
Vswitch (differential) = –330 V to Gnd
Vswitch (differential) = –60 V to +270 V
Vswitch (differential) = –310 V to Gnd
Vswitch (differential) = –60 V to +250 V
1
1
1
µA
µA
µA
ON-state Voltage*
dc Current Limit:
+85
°C
–40
°C
Dynamic Current Limit
(t = < 0.5
µs)
TR
AN
NO
SF
T
RE
ER
NE CO
R
T
LINE
=
±10
mA,
±40
mA, T
BAT
= –2 V
T
LINE
=
±10
mA,
±40
mA, T
BAT
= –2 V
T
LINE
=
±10
mA,
±40
mA, T
BAT
= –2 V
Per ON-resistance test
condition of SW1, SW2
Iswitch = I
LIMIT
@ 50 Hz/60 Hz
19.5
14.5
0.2
2.5
28
1.0
220
250
V
mA
mA
A
Vswitch (on) =
±10
V
Vswitch (on) =
±10
V
Break switches in ON state; ringing access
switches off; apply
±1000
V at 10/1000
µs
pulse; appropriate secondary protection in
place
Vswitch (both poles) =
±320
V,
Logic inputs = Gnd
Vswitch (both poles) =
±330
V,
Logic inputs = Gnd
Vswitch (both poles) =
±310
V,
Logic inputs = Gnd
Isolation:
+25
°C
+85
°C
–40
°C
200
1
1
1
µA
µA
µA
V/µs
dV/dt Sensitivity
* This parameter is not tested in production. Choice of secondary protector should ensure this rating is not exceeded.
† Applied voltage is 100 Vp-p square wave at 100 Hz.
4
Data Sheet
November 1999
L7582 Tip Ring Access Switch
Electrical Characteristics
(continued)
Table 6. Ring Return Switch, 3
Parameter
OFF-state Leakage Cur-
rent (SW3):
+25
°C
+85
°C
–40
°C
dc Current Limit
Dynamic Current Limit
(t = < 0.5
µs)
ON-resistance
ON-state Voltage*
Isolation:
+25
°C
+85
°C
–40
°C
dV/dt Sensitivity
Test Condition
Measure
Min Typ Max Unit
NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS
NOT RECOMMENDED FOR NEW DESIGNS NOT RECOMMENDED FOR NEW DESIGNS
W MM
E
D
DE E
SI ND
D
GN E D
E
VI
S FO
C
R
E
Vswitch (differential) = –320 V to Gnd
Vswitch (differential) = –60 V to +260 V
Vswitch (differential) = –330 V to Gnd
Vswitch (differential) = –60 V to +270 V
Vswitch (differential) = –310 V to Gnd
Vswitch (differential) = –60 V to +250 V
Vswitch (on) =
±10
V
Break switches in ON state; ringing access switches off;
apply
±1000
V at 10/1000
µs
pulse; appropriate second-
ary protection in place
Iswitch (on) =
±0
mA,
±10
mA
Iswitch = I
LIMIT
@ 50 Hz/60 Hz
Vswitch (both poles) =
±320
V, Logic inputs = Gnd
Vswitch (both poles) =
±330
V, Logic inputs = Gnd
Vswitch (both poles) =
±310
V, Logic inputs = Gnd
Iswitch
Iswitch
Iswitch
Iswitch
Iswitch
V
ON
V
ON
200
2.5
1
1
1
µA
µA
µA
mA
A
V
µA
µA
µA
V/µs
200
100
130
1
1
1
Iswitch
Iswitch
Iswitch
* This parameter is not tested in production. Choice of secondary protector should ensure this rating is not exceeded.
† Applied voltage is 100 Vp-p square wave at 100 Hz.
Table 7. Ringing Access Switch, 4
Parameter
OFF-state Leakage Cur-
rent (SW4):
+25
°C
+85
°C
–40
°C
TR
AN
NO
SF
T
RE
ER
NE CO
R
Test Condition
Measure
Min Typ Max Unit
ON Voltage
Ring Generator Current
During Ring
Steady-state Current
Surge Current
Release Current
ON-resistance
Isolation:
+25
°C
+85
°C
–40
°C
dV/dt Sensitivity
Vswitch (differential) = –255 V to +210 V
Vswitch (differential) = +255 V to –210 V
Vswitch (differential) = –270 V to +210 V
Vswitch (differential) = +270 V to –210 V
Vswitch (differential) = –245 V to +210 V
Vswitch (differential) = +245 V to –210 V
Iswitch (on) =
±1
mA
V
CC
= 5 V
IN
ACCESS
= 0
Iswitch (on) =
±70
mA,
±80
mA
Iswitch
Iswitch
Iswitch
*
500
1
1
1
3
150
2
12
1
1
1
µA
µA
µA
V
mA
mA
A
µA
µA
µA
µA
V/µs
I
RINGSOURCE
V
on
Iswitch
Iswitch
Iswitch
Vswitch (both poles) =
±320
V, Logic inputs = Gnd
Vswitch (both poles) =
±330
V, Logic inputs = Gnd
Vswitch (both poles) =
±310
V, Logic inputs = Gnd
200
* At the time of publication of this data sheet, the current device design will be a nominal 4 mA. Devices are being redesigned to reduce this current to less
than 2 mA nominally. Consult your Legerity account executive for additional details.
† Choice of secondary protector and series current-limit resistor should ensure these ratings are not exceeded.
‡ Applied voltage is 100 Vp-p square wave at 100 Hz.
5
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参数对比
与ATTL7582AC相近的元器件有:ATTL7582BC、ATTL7582BAE、ATTL7582BAE-TR。描述及对比如下:
型号 ATTL7582AC ATTL7582BC ATTL7582BAE ATTL7582BAE-TR
描述 Telecom Circuit, 1-Func, PDIP16, PLASTIC, DIP-16 Telecom Circuit, 1-Func, PDIP16, PLASTIC, DIP-16 Telecom Circuit, 1-Func, PDSO16, PLASTIC, SO-16 Telecom Circuit, 1-Func, PDSO16, PLASTIC, SO-16
厂商名称 Zarlink Semiconductor (Microsemi) Zarlink Semiconductor (Microsemi) Zarlink Semiconductor (Microsemi) Zarlink Semiconductor (Microsemi)
包装说明 DIP, DIP, SOP, SOP,
Reach Compliance Code unknown unknown unknown unknown
JESD-30 代码 R-PDIP-T16 R-PDIP-T16 R-PDSO-G16 R-PDSO-G16
功能数量 1 1 1 1
端子数量 16 16 16 16
最高工作温度 85 °C 85 °C 85 °C 85 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 DIP DIP SOP SOP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 5.08 mm 5.08 mm 2.67 mm 2.67 mm
标称供电电压 5 V 5 V 5 V 5 V
表面贴装 NO NO YES YES
电信集成电路类型 TELECOM CIRCUIT TELECOM CIRCUIT TELECOM CIRCUIT TELECOM CIRCUIT
温度等级 INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
端子形式 THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING
端子节距 2.54 mm 2.54 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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