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AUIR3241STR

IR_HSS-LSS-GATEDRIVER

器件类别:模拟混合信号IC    驱动程序和接口   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
包装说明
,
Reach Compliance Code
compliant
ECCN代码
EAR99
Factory Lead Time
26 weeks
接口集成电路类型
BUFFER OR INVERTER BASED MOSFET DRIVER
湿度敏感等级
2
峰值回流温度(摄氏度)
NOT SPECIFIED
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
Automotive IC
Automotive grade
Gate driver
AUIR3241S
LOW QUIESCENT CURRENT BACK TO BACK MOSFET DRIVER
Features
Very low quiescent current on and off state
Back to back configuration
Boost converter with integrated diode
Standard level gate voltage
Input active high and 3.3V compatible
Under voltage lockout with diagnostic
Wide operating voltage 3-36V
Ground loss protection
Lead-Free, Halogen Free, RoHS compliant
Product Summary
Operating voltage 3-36V
Vgate 11.5V min.
I Vcc average On 45µA max. at 25°C
I Vcc average Off 35µA max. at 25°C
Package
Applications
Power switch for Stop and Start board net stabilizer
Battery switch
SO8
Description
The AUIR3241S is a high side Mosfet driver for back to back topology targeting back to back switch. It features a very low
quiescent current both on and off state. The AUIR3241S is a combination of a boost DC/DC converter using an external inductor
and a gate driver. It drives standard level Mosfet even at low battery voltage. The input controls the gate voltage. The AUIR3241S
integrates an under voltage lock out protection to prevent to drive the Mosfet in linear mode.
Ordering Information
Base Part Number
AUIR3241S
Standard Pack
Package Type
Form
SOIC8
Tape and reel
Quantity
2500
AUIR3241STR
Complete Part Number
1
Rev 1.01
2017-09-12
AUIR3241S
Typical Connection – Back to Back
Main Battery
Loads
Out
Cout
AUIR3241S
VCC
Cin
Gate
Rg
18V
IN
Rin
Source
Sw
100µH
Rs
GND
Rs
Current measurement
Typical Connection – Q_diode
Main Battery
Loads
Out
Cout
AUIR3241S
VCC
Cin
Gate
Rg
18V
IN
Rin
Source
Sw
100µH
Rs
GND
Rs
Current measurement
2
Rev 1.01
2017-09-12
AUIR3241S
Typical Connection – Battery switch
Main Battery
Loads
Out
Cout
AUIR3241S
VCC
Cin
Gate
Rg
18V
IN
Rin
Source
Sw
100µH
Rs
GND
Rs
Current measurement
3
Rev 1.01
2017-09-12
AUIR3241S
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur.
Symbol
Vcc-gnd
Vsw-gnd
Vsw-Vrs
Vout-Vcc
Vout-gnd
Vout-Vgate
Vgate-Vsource
Vout-Vsource
Vrs-gnd
Vin-gnd
Isw
ID
Rg
Tj max.
Parameter
Maximum Vcc voltage
Maximum Sw voltage
Maximum Sw voltage
Maximum Vout-Vcc voltage
Maximum Vout voltage
Maximum Vout-Vgate voltage
Maximum Vgate-Vsource voltage
Maximum Vout-Vsource voltage
Maximum Rs pin voltage
Maximum IN pin voltage
Maximum continuous current in Sw pin
Maximum continuous current in the rectifier diode
Minimum gate resistor
Maximum operating junction temperature
Maximum storage temperature
Min.
-0.3
Vrs-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
-0.3
Max.
65
Vout+Vf
65
65
65
65
75
75
6
Vout+0.3
200
200
Units
V
mA
Ohm
°C
100
-40
-55
150
150
Thermal Characteristics
Symbol
Rth
Parameter
Thermal resistance junction to ambient
Typ.
100
Max.
Units
°C/W
Recommended Operating Conditions
Symbol
VIH
VIL
Parameter
High level input voltage
Low level input voltage
Min.
2.5
0
Max.
5.5
0.8
Units
V
4
Rev 1.01
2017-09-12
AUIR3241S
Static Electrical Characteristics
Tj=-40..125°C, Vcc=6..16V (unless otherwise specified), typical value are given for Vcc=14V and Tj=25°C.
Symbol
Parameter
Min.
Typ.
Max.
Units
Test Conditions
Supply voltage range for extended operation (some
Vcc op (ext).
parameters may be downgraded beyond nominal
3
36
V
See page 11
operation)
Vcc op (nom).
(1)
Supply voltage range for nominal operation
6
16
(2)
Iq Vcc Off
Supply current when Off, Tj=25°C
2
6
Vin=0V,K1/K2 off,
K3 on, Vout-Vcc=14V
Supply current when Off, Tj=125°C
3
8
Iq Vcc On
(2)
Supply current when On, Tj=25°C
3
6
Vin=5V,K1/K3 off,
µA
K2 on, Vout-Vcc=14V
Supply current when On, Tj=125°C
4
8
(2)
Iq Out Off
Quiescent current on Out pin, Tj=25°C
10
15
Vin=0V,K1/K2 off,
K3 on, Vout-Vcc=14V
Quiescent current on Out pin, Tj=125°C
13
25
(2)
Iq Out On
Quiescent current on Out pin, Tj=25°C
12
20
Vin=5V,K1/K3 off,
K2 on, Vout-Vcc=14V
Quiescent current on Out pin, Tj=125°C
15
30
Vbr Out
Breakdown voltage between Out and Source
75
90
I=10mA
Vbr Gate
Breakdown voltage between Gate and Source
75
90
V
I=10mA
OV
Over-voltage protection between Vout and Gnd
50
55
62
Iin
Input current
3
6
µA
Vin=5V
Vin_th
Input voltage threshold
0.8
1.5
2.5
Vout_th
Output voltage threshold
11.5
12.5
14
UV_LO
Undervoltage lockout between Vout and Vcc
6.5
8
10
V
See figure 7
Vout_th–UV_LO
Output voltage minus Undervoltage lockout threshold
3
4.5
Vrs th
Rs threshold
0.8
1
1.3
I latch UV_LO
Under voltage lockout Latch current between Vout and
10
25
40
See page 11
mA
Vcc
Vf
Forward voltage of rectifier diode
0.9
1.1
V
I=100mA, Tj=25°C
Rdson K1
Rdson of K1, Tj=-40°C
8
13
I=100mA,
Vout-Vcc=12.5V
Rdson of K1, Tj=25°C
11
15
Rdson of K1, Tj=125°C
15
20
Rdson K2
Rdson of K2, Tj=25°C
25
I=100mA
Rdson K3
Rdson of K3, Tj=25°C
25
(1)
If the part is supply outside of this range (ex: during ramp up of Vcc), other values in this table might not be guaranteed
(2)
Supply current might be higher than specified during the start-up of the part (especially during the charge of Cout)
Timing Converter Characteristics
Tj=-40..125°C, Vcc=6..16V (unless otherwise specified), typical value are given for Vcc=14V and Tj=25°C.
Symbol
Toff
Tdon K1
Tdoff K1
POR_Delay
POR_Th
Parameter
Off time
Turn-on delay of K1
Turn-off delay of K1
Power On Reset delay
Power On Reset threshold
Min.
2
Typ.
3
5
0.2
500
6.5
Max.
4
Units
µs
V
Test Conditions
See figure 4
See figure 5
See figure 10
200
6
1200
7.5
Switching Characteristics
Tj=-40..125°C, Vcc=6..16V (unless otherwise specified), typical value are given for Vcc=14V and Tj=25°C.
Symbol
Tdon gate
Tr gate
Igate+
Tdoff gate
Tf gate
Igate-
Treset
Parameter
Turn-on delay
Rise time on gate 10% to 90% of Vout-Vcc
Gate high short circuit pulsed current
Turn-off delay
Fall time on gate 90% to 10% of Vout-Vcc
Gate low short circuit pulsed current
Time to reset the under voltage latches
Min.
0.5
Typ.
1. 5
6
350
2
6
350
1
Max.
3
15
Units
µs
mA
µs
mA
µs
Test Conditions
Cgate=100nF
Vgate-Vsource=0V
Cgate=100nF
Vgate-Vsource=14V
See page 11
100
0.5
5
15
100
100
5
Rev 1.01
2017-09-12
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