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AVSMBG6.0CAE3

Trans Voltage Suppressor Diode, 600W, 6V V(RWM), Bidirectional, 1 Element, Silicon, DO-215AA, ROHS COMPLIANT, PLASTIC PACKAGE-2

器件类别:分立半导体    二极管   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Microsemi
零件包装代码
DO-215AA
包装说明
R-PDSO-G2
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
HIGH RELIABILITY
最小击穿电压
6.67 V
最大钳位电压
10.3 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码
DO-215AA
JESD-30 代码
R-PDSO-G2
JESD-609代码
e3
最大非重复峰值反向功率耗散
600 W
元件数量
1
端子数量
2
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
BIDIRECTIONAL
最大功率耗散
1.38 W
认证状态
Not Qualified
最大重复峰值反向电压
6 V
表面贴装
YES
技术
AVALANCHE
端子面层
MATTE TIN
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
文档预览
AVSMBJ5.0A thru AVSMBJ170A, CA e3 and
AVSMBG5.0A thru AVSMBG170A, CA, e3
SURFACE MOUNT 600 Watt
Transient Voltage Suppressor
SCOTTSDALE DIVISION
DESCRIPTION
This AVSMBJ5.0A-170A or AVSMBG5.0A-170A series of surface mount 600 W Transient
Voltage Suppressors (TVSs) protects a variety of voltage-sensitive components from
destruction or degradation. It is available in J-bend design (AVSMBJ) with the DO-214AA
package for greater PC board mounting density or in a Gull-wing design (AVSMBG) in the
DO-215AA for visible solder connections.
It is available in both unidirectional and
bidirectional configurations with an A or CA suffix part number as well as RoHS Compliant
designated by an “e3”suffix. Their clamping response time is virtually instantaneous. As a
result, they can be used for protection from ESD or EFT per IEC61000-4-2 and IEC61000-
4-4, or for inductive switching environments and induced RF protection. They can also
protect from secondary lightning effects per IEC61000-4-5 and class levels defined herein.
Microsemi also offers numerous other TVS products to meet higher and lower power
demands and special applications.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
PACKAGE
W W W .
Microsemi
.C
O M
FEATURES
1.
2.
3.
4.
5.
6.
APPLICATIONS / BENEFITS
Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD
and EFT protection respectively
Secondary lightning protection per IEC61000-4-5 with 42
Ohms source impedance:
Class 1: AVSMB 5.0 to AVSMB 120A or CA
Class 2: AVSMB 5.0 to AVSMB 60A or CA
Class 3: AVSMB 5.0 to AVSMB 30A or CA
Class 4: AVSMB 5.0 to AVSMB 15A or CA
Secondary lightning protection per IEC61000-4-5 with 12
Ohms source impedance:
Class 1: AVSMB 5.0 to AVSMB 36A or CA
Class 2: AVSMB 5.0 to AVSMB 18A or CA
Compliant to RTCA/DO-160E Waveform 4, Levels 1 & 2
Compliant to RTCA/DO-160E Waveform 4, Level 3 for
AVSMB5.0 to AVSMB20A or CA
Compliant to RTCA/DO-160E Waveform 4, Level 4 for
AVSMB5.0 to AVSMB7.5
Compliant to RTCA/DO-160E Waveform 5A, Level 1
Compliant to RTCA/DO-160E Waveform 5A, Level 2 for
AVSMB5.0 to AVSMB6.0A or CA
Selections for 5.0 to 170 volts standoff voltages (V
WM
)
100% screened as follows for avionics applications:
Temperature Cycle (thermal shock) 20 Cycles -55°C to 125°C
Solder Capability: Stress Tested at 260°C for 10 sec.
Surge 1 pulse at 110% Ipp (Both Directions for Bidirectional)
Surge 1 pulse at 100% Ipp (Both Directions for Bidirectional)
Electrical Test
Burn-in (HTRB) 48 hrs 125°C Polarity A for Bidirectional (96 hrs
for Unidirectional)
7. Electrical Test Delta I
D
and V
(BR)
Polarity A
8. Burn-in (HTRB) 48 hrs 125°C Polarity B for bidirectional (not
required for Unidirectional)
9. Electrical Test Delta I
D
and V
(BR)
Polarity B (Not required for
Unidirectional)
10. Electrical Test GO-NO-GO
RoHS Compliant devices available and designated by
adding an “e3” suffix
Economical surface mount design in both J-bend or Gull-wing
terminations.
Protects sensitive components such as IC’s, CMOS, Bipolar,
BiCMOS, ECL, DTL, T
2
L, etc.
Protection from switching transients & induced RF
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25
º
C: 600 watts at 10/1000
μs
(also see Fig 1,2, and 3)
Impulse repetition rate (duty factor): 0.01%
t
clamping
(0 volts to V
(BR)
min.): < 100 ps theoretical for
unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65
º
C to +150
º
C
Thermal resistance: 25
º
C/W junction to lead or 90
º
C/W junction
to ambient when mounted on FR4 PC board (1oz Cu) with
recommended footprint (see last page)
Steady-State Power dissipation: 5 watts at T
L
= 25
o
C, or 1.38
watts at T
A
= 25
º
C when mounted on FR4 PC board with
recommended footprint
Forward Surge at 25ºC: 100 amps peak impulse of 8.3 ms half-
sine wave (unidirectional only)
Solder temperatures: 260
º
C for 10 s (maximum)
MECHANICAL AND PACKAGING
2-Stage: Robust, High Reliability Lead Frame
CASE: Void-free transfer molded thermosetting epoxy
body meeting UL94V-0
TERMINALS: Gull-wing or C-bend (modified J-bend)
leads Tin-Lead or RoHS compliant annealed matte-Tin
plating solderable per MIL-STD-750, method 2026
POLARITY: Cathode indicated by band. No band on bi-
directional devices.
MARKING: See Page 2 marking column.
TAPE & REEL option: Standard per EIA-481-1-A with 12
mm tape, 750 per 7 inch reel or 2500 per 13 inch reel.
WEIGHT: 0.1 grams
See package dimension on last page
AVSMB 5.0V – 170V
Copyright
2008
1-29-2008 REV D; AVSMB5-170
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
AVSMBJ5.0A thru AVSMBJ170A, CA e3 and
AVSMBG5.0A thru AVSMBG170A, CA, e3
SURFACE MOUNT 600 Watt
Transient Voltage Suppressor
SCOTTSDALE DIVISION
ELECTRICAL CHARACTERISTICS
@ 25
o
C UNLESS OTHER WISE SPECIFIED
MICROSEMI PART NUMBER
REVERSE
STANDOFF
VOLTAGE
V
WM
Volts
5.0
6.0
7.5
10
11
12
16
17
20
43
45
48
170
BREAKDOWN
VOLTAGE
V
BR
@ I
(BR)
Volts
Gull-Wing
Lead
AVSMBG5.0A
AVSMBG6.0A
AVSMBG7.5A
AVSMBG10A
AVSMBG11A
AVSMBG12A
AVSMBG16A
AVSMBG17A
AVSMBG20A
AVSMBG43A
AVSMBG45A
AVSMBG48A
AVSMBG170A
Modified “J”
Bend Lead
AVSMBJ5.0A
AVSMBJ6.0A
AVSMBJ7.5A
AVSMBJ10A
AVSMBJ11A
AVSMBJ12A
AVSMBJ16A
AVSMBJ17A
AVSMBJ20A
AVSMBJ43A
AVSMBJ45A
AVSMBJ48A
AVSMBJ170A
Marking
AV5.0A
AV6.0A
AV7.5A
AV10A
AV11A
AV12A
AV16A
AV17A
AV20A
AV43A
AV45A
AV48A
AV170A
MIN.
6.40
6.67
8.33
11.1
12.2
13.3
17.8
18.9
22.2
47.8
50.0
53.3
189
I
(BR)
mA
10
10
1
1
1
1
1
1
1
1
1
1
1
Volts
9.2
10.3
12.9
17.0
18.2
19.9
26.0
27.6
32.4
69.4
72.7
77.4
275
Amps
65.2
58.3
46.5
35.3
33.0
30.2
23.1
21.7
18.5
8.6
8.3
7.7
2.2
A
100
500
100
1
.5
.5
.5
.5
.5
.5
.5
.5
.5
MAXIMUM
CLAMPING
VOLTAGE
@ I
PP
PEAK PULSE
CURRENT
(See Fig. 2)
I
PP
MAXIMUM
STANDBY
CURRENT
I
D
@ V
WM
W W W .
Microsemi
.C
O M
“FOR OTHER VOLTAGES CONTACT THE FACTORY”
Bidirectional device types are indicated by a CA suffix after the part number. (e.g.: AVSMBG170CA).
Bidirectional capacitance is half that shown in figure 4 at zero volts.
Microsemi Corp’s AVSMB series (600 W) surface mountable packages are designed specifically for transient voltage suppression. The
wide leads assure a large surface contact for good heat dissipation, and a low resistance path for surge current flow to ground. These
high speed transient voltage suppressors can be used to effectively protect sensitive components such as integrated circuits and MOS
devices.
AVSMB 5.0V – 170V
Symbol
V
WM
P
PP
V
(BR)
I
D
Definition
SYMBOLS & DEFINITIONS
Symbol
I
PP
V
C
Definition
Working Peak (Standoff) Voltage
Peak Pulse Power
Breakdown Voltage
Standby Current
I
(BR)
Peak Pulse Current
Clamping Voltage
Breakdown Current for V
(BR)
Copyright
2008
1-29-2008 REV D; AVSMB5-170
Microsemi
Page 2
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
AVSMBJ5.0A thru AVSMBJ170A, CA e3 and
AVSMBG5.0A thru AVSMBG170A, CA, e3
SURFACE MOUNT 600 Watt
Transient Voltage Suppressor
SCOTTSDALE DIVISION
GRAPHS
50
30
W W W .
Microsemi
.C
O M
P
PP
– Peak Pulse Power – kW
T
C
= 25
o
C
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
10,000
Test waveform parameters: tr=10
s,
tw=1000
s
tw – Pulse Width -
s
FIGURE 1
Peak Pulse Power vs. Pulse Time
FIGURE 2
Pulse Waveform for
Exponential Surge
PAD LAYOUT
Peak Pulse Power (
P
PP
) or continuous
Power in Percent of 25
o
C Rating
C – Capacitance - Picofarads
A
B
C
SMBJ
INCHES
mm
.260
6.60
.085
2.16
.110
2.79
SMBG
T
L
Lead Temperature
o
C
FIGURE 3 -
Derating Curve
V
(BR)
- Breakdown Voltage – Volts
FIGURE 4
Typical Capacitance vs Breakdown Voltage
A
B
C
INCHES
0.320
0.085
0.110
mm
8.13
2.16
2.79
AVSMB 5.0V – 170V
PACKAGE DIMENSIONS
MIN
MAX
MIN
MAX
Copyright
2008
1-29-2008 REV D; AVSMB5-170
A
.077
.083
1.96
2.10
B
C
D
E
F
.160
.130 .205 .077
.235
.180
.155 .220 .104
.255
DIMENSIONS IN MILLIMETERS
4.06
3.30 5.21 1.95
5.97
4.57
3.94 5.59 2.65
6.48
K
.015
.030
.381
.762
L
.030
.060
.760
1.520
Microsemi
Page 3
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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