AVT-54689
50 – 6000 MHz
InGaP HBT Gain Block
Data Sheet
Description
Avago Technologies’ AVT-54689 is an economical, easy-
to-use, general purpose InGaP HBT MMIC gain block am-
plifier utilizing Darlington pair configuration housed in a
3-lead (SOT 89) surface mount plastic package.
The Darlington feedback structure provides inherent
broad bandwidth performance, resulting in useful operat-
ing frequency up to 6 GHz. This is an ideal device for small-
signal gain cascades or IF amplification.
AVT-54689 is fabricated using advanced InGaP HBT
(hetero-junction Bipolar Transistor) technology that offer-
ing state-of-the-art reliability, temperature stability and
performance consistency.
Features
•
Small signal gain amplifier
•
Operating frequency 50 MHz to 6 GHz
•
Unconditionally stable
•
50 Ohm input & output
•
Industry standard SOT-89
•
Lead-free, RoHS compliant, Green
Specifications
2 GHz, 5 V Vcc, 58 mA (typ.)
•
17.8 dB Gain
•
17.2 dBm P1dB
•
30 dBm OIP3
•
4.2 dB NF
•
14.8 IRL and 10.8 ORL
Component Image
54X
#1
#2
RFin
GND
Top View
#3
RFout
#3
#2
RFout
GND
#1
RFin
Applications
•
Wireless Data / WLAN
•
WiMAX / WiBRO
•
CATV & Cable modem
•
ISM
Bottom View
Notes:
Package marking provides orientation and identification
“54” = Device Code
“X” = Month of manufacture
Typical Biasing Configuration
Vcc
C
byp
C
byp
L
C
block
C
block
Pin 1
Input
Pin 3
Output
Attention: Observe precautions for han-
dling electrostatic sensitive devices.
ESD Machine Model = 180 V
ESD Human Body Model = 2000 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
RFin
Pin 2
(Gnd)
RFout
Absolute Maximum Rating
(1)
T
A
= 25° C
Symbol
V
d, MAX
P
IN, MAX
P
DISS
T
OPT
T
J, MAX
T
STG
Thermal Resistance
Units
V
dBm
mW
°C
°C
°C
Parameter
Device Voltage
CW RF Input Power
Total Power Dissipation
(2)
Operating Temperature
Junction Temperature
Storage Temperature
Absolute Max.
5.5
18
465
-40 to 85
150
-65 to 150
Thermal Resistance
(3)
θ
jc
= 114° C/W
(I
d
= 57 mA, T
b
= 94° C)
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Ground lead temperature is 25° C. Derate 8.8
mW/° C for T
c
>117° C.
3. Thermal resistance measured using Infrared
measurement technique.
Electrical Specification
Symbol
I
d
G
p
f
3dB
OIP3
[5]
S11
S22
S12
P1dB
NF
Parameter and Test Condition
Device Current
Power Gain
3 dB Bandwidth
Output 3
rd
Intercept Point
Input Return Loss, 50
Ω
source
Output Return Loss, 50
Ω
load
Reverse Isolation
Output Power at 1dB Gain Compression
Noise Figure
Frequency
900 MHz
2000 MHz
900 MHz
2000 MHz
900 MHz
2000 MHz
900MHz
2000 MHz
900 MHz
2000 MHz
900 MHz
2000 MHz
900 MHz
2000 MHz
Units
mA
dB
GHz
dBm
dB
dB
dB
dBm
dB
Min.
51.5
16.3
Typ.
57.7
20.5
17.8
2.5
32.3
Max.
64.5
19.3
28
29.9
-22.4
-14.8
-13.8
-10.8
-23.4
-23.8
19.4
17.2
3.8
4.2
2
V
CC
RFin
Zo = 50 Ohm
Pin 3
Output
Pin 1
Input
Pin 2
GND
Bias Tee
Zo = 50 Ohm
RFout
Figure 1. Block diagram of board used for Id, Gain, OIP3, S11, S22, S12, OP1dB and NF measure-
ments. Circuit losses have been de-embedded from actual measurements.
Product Consistency Distribution Charts at 2 GHz, V
cc
= 5 V
LSL
USL
LSL
USL
51
54
57
60
63
17
18
19
Figure 2. I
d
(mA) distribution. LSL = 51.5, Nominal = 57.7, USL = 64.5.
Figure 3. Gain (dB) distribution. LSL = 16.3, Nominal = 17.8, USL = 19.3.
LSL
28
29
30
31
Figure 4. OIP3 (dBm) distribution. LSL = 28, Nominal = 29.9.
Notes:
1. Statistical distribution determined from a sample size of 4236 samples taken from 3 different wafers, measured on a production test board.
2. Future wafers allocated to this product may have typical values anywhere between the minimum and maximum specification limits.
3
AVT-54689 Typical Performance Curves
T
A
= 25° C, Zo = 50
Ω,
V
cc
= 5.0 V, P
in
= -15 dBm (unless specified otherwise)
22
20
18
Gain (dB)
16
14
12
10
0
4.5 V
5.0 V
5.5 V
1
2
Frequency (GHz)
3
4
Gain (dB)
22
20
18
16
14
12
10
0
25° C
85° C
-40° C
1
2
Frequency (GHz)
3
4
Figure 5. Gain vs. Frequency and Voltage
Figure 6. Gain vs. Frequency and Temperature
6.5
6.0
5.5
NF (dB)
5.0
4.5
4.0
3.5
3.0
0
1
2
Frequency (GHz)
3
4
4.5 V
5.0 V
5.5 V
NF (dB)
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
0
1
2
Frequency (GHz)
3
4
25° C
85° C
-40° C
Figure 7. Noise Figure vs. Frequency and Voltage
Figure 8. Noise Figure vs. Frequency and Temperature
24
22
20
P1dB (dBm)
18
16
14
12
10
0
1
2
Frequency (GHz)
3
4
4.5 V
5.0 V
5.5 V
P1dB (dBm)
22
20
18
16
14
12
10
0
1
2
Frequency (GHz)
3
4
25° C
85° C
-40° C
Figure 9. P1dB vs. Frequency and Voltage
Figure 10. P1dB vs. Frequency and Temperature
4
AVT-54689 Typical Performance Curves
T
A
= 25° C, Zo = 50
Ω,
V
cc
= 5.0 V, P
in
= -15 dBm (unless specified otherwise), continued
40
38
36
34
32
30
28
26
24
22
20
4.5 V
5.0 V
5.5 V
OIP3 (dBm)
0
1
2
Frequency (GHz)
3
4
40
38
36
34
32
30
28
26
24
22
20
25° C
85° C
-40° C
OIP3 (dBm)
0
1
2
Frequency (GHz)
3
4
Figure 11. OIP3 vs. Frequency and Voltage
Figure 12. OIP3 vs. Frequency and Temperature
100
90
80
70
60
50
40
30
20
10
0
0
25° C
85° C
-40° C
S11 (dB)
-5
-10
-15
-20
-25
-30
0
1
2
3
Vd (V)
4
5
6
-35
0
1
2
3
4
5
6
Frequency (GHz)
7
8
25° C
85° C
-40° C
9
10
Id (mA)
Figure 13. I
d
vs V
d
and Temperature
Figure 14. S11 vs Frequency and Temperature
0
-5
-10
S22 (dB)
-15
-20
-25
-30
-35
0
1
2
3
4
5
6
Frequency (GHz)
7
8
25° C
85° C
-40° C
9
10
Figure 15. S22 vs Frequency and Temperature
5
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