2.496 - 2.690 GHz
Small-Cell Power Amplifier Module
FEATURES
•
•
•
•
•
•
•
•
InGaP HBT Technology
-48 dBc ACPR @ ±10 MHz, +27 dBm
28 dB Gain
High Efficiency
Low Transistor Junction Temperature
Matched for a 50
Ω
System
Low Profile Miniature Surface Mount Package;
RoHS Compliant
Multi-Carrier Capability
AWB7228
DATA SHEET - Rev 2.4
APPLICATIONS
•
•
•
•
•
LTE, WCDMA and HSDPA Air Interfaces
FDD and TDD Systems
Picocell, Femtocell, Home Nodes
Customer Premises Equipment (CPE)
Data Cards and Terminals
14 Pin 7 mm x 7 mm x 1.3 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWB7228 is a fully matched, Multi-Chip-Module
(MCM) designed for picocell, femtocell, and customer
premises equipment (CPE) applications. Its high
linearity and efficiency meet the extremely demanding
needs of small cell infrastructure architectures.
Designed for LTE,WCDMA and HSDPA air interfaces
operating in the 2.496 GHz to 2.690 GHz band, the
AWB7228 delivers up to +27 dBm of LTE (E-TM1.1)
power with an ACPR of -47 dBc. It operates from
a convenient +4.5 V supply and provides 27 dB of
gain. The device is manufactured using an advanced
InGaP HBT MMIC technology offering state-of-the-
art reliability, temperature stability, and ruggedness.
The self-contained 7 mm x 7 mm x 1.3 mm surface
mount package incorporates RF matching networks
optimized for output power, efficiency, and linearity in
a 50 Ω system.
Vcc 2
Vcc 1
RF Input
Matching
Network
Matching
Network
Bias
Network
Matching
Network
Matching
Network
RF Output
Bias
Network
Power
Detector
V
REF
V
DET
Figure 1: Block Diagram
08/2015
AWB7228
V
REF
1
GND 2
GND 3
V
CC1
4
RF
IN
5
GND 6
V
DET
7
GND
14 GND
13 GND
12 RF
OUT
11 V
CC2
10 GND
9 GND
8 GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
NAME
V
REF
GND
GND
V
CC1
RF
IN
GND
V
DET
GND
GND
GND
V
CC2
RF
OUT
GND
GND
DESCRIPTION
Reference Voltage
Ground
Ground
Supply Voltage
RF Input
Ground
Detector Voltage
Ground
Ground
Ground
Supply Voltage
RF Output
Ground
Ground
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DATA SHEET - Rev 2.4
08/2015
AWB7228
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
Supply Voltage (V
CC
)
Reference Voltage (V
REF
)
RF Output Power (P
OUT
)
RF Input Power (P
IN
)
ESD Rating
Human Body Model
(1)
Charged Device Model
(2)
MSL Rating
(3)
Junction Temperature (T
J
)
Storage Temperature (T
STG
)
MIN
0
0
-
-
Class 1C
Class IV
4
-
-40
MAX
+5
+3.5
+30
+10
-
-
-
+150
+150
°C
°C
UNIT
V
V
dBm,
modulated
dBm, CW
Functional operation is not implied under these conditions. Exceeding any
one or a combination of the Absolute Maximum Rating Conditions may cause
permanent damage to the device. Exposure to absolute ratings for extended
periods of time may adversely affect reliability.
Notes:
(1) JEDEC JS-001-2010.
(2) JEDEC JESD22-C101D.
(3) 260
°C
peak reflow.
Table 3: Operating Ranges
PARAMETER
Operating Frequency (f)
Supply Voltage (V
CC
)
Reference Voltage (V
REF
)
RF Output Power (P
OUT
)
(1)
Case Temperature (T
C
)
(2)
MIN
2496
+3.6
+2.75
0
-
-40
TYP
-
+4.5
+2.85
-
+27
-
MAX
2690
+4.65
+2.95
+0.5
-
+85
UNIT
MHz
V
V
dBm
°C
PA "on"
PA "shut down"
COMMENTS
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
(1) Typ RF Output Power is used during production test.
(2) Case Temperature references the board temperature at the ground paddle on the backside of the package.
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DATA SHEET - Rev 2.4
08/2015
AWB7228
Table 4: Electrical Specifications
(T
C
= +25 °C, V
CC
= +4.5 V, V
REF
= +2.85 V, 50
Ω
system)
PARAMETER
Gain
(2)
ACPR
(1), (2), (3)
@ 10 MHz
@ 20 MHz
Power-Added Efficiency
(1), (2), (3)
Thermal Resistance (R
JC
)
(4)
Supply Current
(1), (2), (3)
Quiescent Current (Icq)
Reference Current
Leakage Current
Harmonics
2f
O
3f
O
, 4f
O
Input Return Loss
Output Return Loss
P1dB
RF Switching Time
(5)
Rise Time (PA “off” to “on”)
Fall Time (PA “on” to “off”)
Spurious Output Level
(all spurious outputs)
MIN
25
-
-
12
-
-
180
10
-
-
-
12
12
-
-
-
TYP
28
-48
-60
14.3
12.5
775
250
14
3
-40
-55
18
18
+34
-
-
MAX
32
-45
-53
-
-
930
320
18
10
-30
-50
-
-
-
12
4
UNIT
dB
dBc
%
°C/W
mA
mA
mA
µA
dBc
dB
dB
dBm
µs
CW tone
V
CC
= +4.5 V, V
REF
switched
between 0 V and +2.85 V
P
OUT
≤
+27 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all voltage and
temperature operating ranges
V
CC
= +4.5 V, P
OUT
= +27 dBm
Applies over full operating
temperature range
through V
REF
pin
V
CC
= +4.65 V, V
REF
= 0 V
Junction to Case
total through V
CC
pins
COMMENTS
-
-
-60
dBc
Load mismatch stress with no
permanent degradation or failure
8:1
-
-
VSWR
Notes:
(1) Measured at 2620 MHz.
(2) P
OUT
= +27 dBm.
(3) E-TM1.1 LTE 10 MHz BW.
(4) Use only V
CC2
(pin 11) current when calculating device junction temperature.
(5) Rise Time defined from time at which V
REF
is switched from 0 V to +2.85 V, to time at which the RF output power
achieves 90% of the average steady-state “on” level; Fall Time defined from time at which V
REF
is switched from +2.85 V
to 0 V, to time at which the RF output power decreases to 10% of the average steady-state “on” level.
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DATA SHEET - Rev 2.4
08/2015
AWB7228
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to the V
REF
voltage.
V
REF
V
REF
capacitors: see Note 3
0.1uF
1000pF
V
REF
GND
GND
1
2
3
4
5
6
7
GND
at slug
14
13
12
AWB7228
11
10
9
8
GND
GND
RF
OUT
V
CC2
GND
GND
GND
1000pF
0.1uF
10uF
100uF
100uF
TVS
Diode
RF Output
V
CC2
V
CC1
TVS
Diode
100uF
10uF
0.1uF
1000pF
V
CC1
RF
IN
GND
V
DET
RF Input
DET
OUT
0.1uF
100KΩ
4.7KΩ
Notes:
1. 10uF and 100uF capacitors are optional.
2. Applications that have large supply voltage transients may benefit from the use of TVS diodes. For such
applications, recommended TVS diodes are SM05T1G or SMJ5.0A.
3. To achieve the RF Switching Time specifications listed in Table 4, the maximum recommended capacitance on
the V
REF
line is 0.01 F. The noise on the V
REF
line should be kept as low as possible to minimize required
capacitance.
Figure 3: Application Circuit Schematic
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DATA SHEET - Rev 2.4
08/2015
模拟与混合信号
