AWT6201
GSM850/GSM900/DCS/PCS
Quad Band PowerPlexer
TM
with Integrated Power Control
Advanced Product Information - Rev 0.7
The module requires only the most basic RF
decoupling, all the RF ports are 50Ω, and interfaces
directly with the baseband power control DAC. The
solution includes integrated power control, two dual
band power amplifiers to support GSM850/900/DCS/
PCS, harmonic filtering and RX/TX switching.
The power amplifiers support class 12 GPRS, 4 TX
slots at 50% duty cycle, using three stage InGaP HBT
PAs. The pHEMT switches support 4 RX ports to in-
terface with external RX SAW filters and the filtering
is achieved using integrated passives technology.
The integrated power control scheme reduces the
number of external components associated with a
power control function, and facilitates fast and easy
production calibration. The power control range is
typically 55dB.
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
ANADIGICS developed technologies
(InGaP HBT/pHEMT/IPP)
Proven high volume low cost laminate/
overmold technology
Integrated Power Control (CMOS)
Integrated PA/SW/LPF
High Gain InGaP HBT PAs
Low loss receive paths
High isolation switch (TX to RX, RX on/off)
Fully compliant GSM harmonic performance
ESD protected antenna port (12kV)
Small footprint (10.5mm x 11.0mm x 1.55mm)
GPRS capable (class 12)
Power control range >50dB
APPLICATIONS
•
•
Quad band handsets and PDAs
Configurable for Tri Band/UMTS handsets
PRODUCT DESCRIPTION
The AWT6201 is the second generation GSM
PowerPlexer
TM
. It has been developed to minimize
time to market for GSM handset/PDA designers.
DC S _R X
DC S /P C S
DC S /P C S _IN
P C S _R X
C NT L_1
C NT L_2
C NT L_3
V B AT T
VR E G
V R AMP
Logic/P ower
C ontroller
ANT
G S M_IN
G S M900_R X
G S M850/900
G S M850_R X
Figure 1: Functional Block Diagram
01/2004
AWT6201
ELECTRICAL CHARACTERISTICS
Table 1: Absolute Minimum and Maximum Ratings
PARAMETER
Supply Voltage (V
CC
)
Input Power (RF
IN
)
Power Control Voltage (V
RAMP
)
Storage Temperature (T
STG
)
Maximum Reflow Temperature
-55
MIN
MAX
+7
+11
1.8
150
240
UNIT
V
dB m
V
°C
°C
Exceeding
the
absolute
maximum
ratings
can
cause
permanent
damage to the device. These are absolute stress ratings only.
Functional operation of the device is not implied at these or any other conditions in
excess of those given in the operations sections of this data sheet. Exposure to
maximum ratings for extended periods can adversely affect device reliability.
Table 2: ESD Ratings
PARAMETER
ESD Threshold Voltage (Antenna Port)
ESD Threshold Voltage (Control Inputs)
ESD Threshold Voltage (RF Inputs)
ESD Threshold Voltage (RX Ports)
METHOD
HBM
HBM
HBM
HBM
RATING
12
1
250
300
UNIT
kV
kV
V
V
Although protection circuitry has been designed into this device, proper
precautions should be taken to avoid exposure to electrostatic discharge (ESD)
during handling and mounting. Human body model HBM employed is resistance =
1500Ω, capacitance = 100pF.
Ω
Table 3: Logic Level Definitions
Test Conditions: V
CC
= 3.0 to 4.8V, T
C
= 25
±
3°C
SIGN AL
Logi c Hi gh
Logi c Low
Input bi as current
MIN
1.7
0
TYP
MAX
3
0.5
10
U N IT
V
V
µ
A
2
ADVANCED PRODUCT INFORMATION - Rev 0.7
01/2004
AWT6201
Table 4: Operating Conditions and Supply Currents
PARAMETER
Supply Voltage (V
BATT
)
Regulated Voltage (V
REG
)
Regulated Current (I
REG)
Regulated Current (I
REG)
Power Down Current
(
V
BATT
= 4.8V)
RX Current (V
BATT
= 4.8V)
Control Voltage (V
RAMP
)
Contol Voltage for minimum P
OUT
(V
RAMP_MIN
)
V
RAMP
input capacitance
GSM850/900 module efficiency
(V
RAMP
= 1.6V, V
BATT
= 3.5V, P
IN
= 2dBm)
DCS/PCS module efficiency
(V
RAMP
= 1.6V, V
BATT
= 3.5V, P
IN
= 2dBm)
Case Temperature (T
C
)
Duty Cycle
-20
0
0
0.2
0.2
15
40
34
85
50
MIN
3.0
2.7
TYP
3.5
2.85
7
10
MAX
4.8
3.0
10
30
10
30
1.6
0.25
20
UNIT
V
V
mA
TX mode enabled
RX mode enabled
COMMENTS
µ
A
µ
A
µ
A
V
V
pF
%
%
°C
%
(PA+Switch+Filter)
(PA+Switch+Filter)
Parametric performance is guaranteed under specified operating conditions.
Table 5: Receiver Specification
Test Conditions: Mode = RX (see control table), V
BATT
= 3.5V, Z
IN
= Z
OUT
= 50Ω, T
C
= 25
±
3°C
PARAMETER
GSM850/900
Insertion loss
DCS/PCS
Insertion loss
Receiver Return loss
Receiver Isolation
ANT to RX_OFF
TX Power at RX ports
MIN
TYP
1.3
1.2
MAX
1.5
1.5
UNIT
dB
dB
dB
dB
dB
dB
Comments
F
IN
= 869 to 960MHz, V
BATT
= 3.0 to
4.8V, T
C
= -20 to +85°C
F
IN
= 1805 to 1990MHz , V
BATT
= 3.0
to 4.8V, T
C
= -20 to +85°C
F
IN
= 869 to 960MHz
F
IN
= 1805 to 1990MHz
F
IN
= 869 to 960MHz
F
IN
= 1805 to 1990MHz
F
IN
= 915MHz, P
OUT
= 33.2dBm
F
IN
= 1910MHz, P
OUT
= 30.4dBm
15
15
25
25
6
3
8
5
dB m
dB m
ADVANCED PRODUCT INFORMATION - Rev 0.7
01/2004
3
AWT6201
Table 6: GSM850/900 Electrical Specification
Test Conditions: Mode = GSM_TX_EN, V
BATT
= 3.5V, Z
IN
= Z
OUT
= 50Ω, T
C
= 25
±
3°C, P
IN
= 2dBm,
P
WIDTH
= 1154µs, Duty Cycle = 25%
PAR AMETER
Frequency (F
IN
)
Input Power (P
IN
)
Output Power (P
OUT
)
D egraded Output Power
MIN
824
880
0
33.2
30.7
TYP
MAX
849
915
U N ITS
MHz
MHz
dB m
dB m
dB m
C OMMEN TS
2
33.8
31.7
4
V
RAMP
= 1.6V
V
BATT
= 3.0 V, V
RAMP
= 1.6V,
P
IN
= 0dBm, T
C
= 85°C
P
IN
= 4dBm, V
BATT
= 3 to 4.8V
Mode = GSM900_RX_EN or
GSM850_RX_EN, see control
table
V
RAMP
= 0.2V, P
IN
= 4dBm,
V
BATT
= 3 to 4.8V
Mode = GSM_TX_EN, see
control table
V
BATT
= 3 to 4.8V,
P
OUT
= 5 to 33.2dBm
VSWR =10:1 All angles
V
BATT
= 3 to 4.8V,
P
OUT
= 5 to 33.2dBm,
T
C
= -20 to 85 °C
P
IN
= 4dBm,
V
BATT
= 4.8V,
P
OUT
= 5 to 33.2dBm,
All phases of load
Forward Isolati on (1)
-55
-51
dB m
Forward Isolati on (2)
-25
-10
dB m
Harmoni c
2
nd
3f
O
to 12.75 GHz
Stabi li ty:
< 1GHz
> 1GHz
-38
-37
-34
-33
dB m
dB m
-36
-30
dB m
dB m
Ruggedness
10:1
VSWR
-88
-84
dB m
F
IN
= 849MHz
F
OUT
= 869 to 894MHz
RBW = VBW = 100kHz,
P
OUT
= 5 to 33.2dBm
F
IN
= 915MHz
F
OUT
= 925 to 935MHz
RBW = VBW = 100kHz,
P
OUT
= 5 to 33.2dBm
F
IN
= 915MHz
F
OUT
= 935 to 960MHz
RBW = VBW = 100kHz,
P
OUT
= 5 to 33.2dBm
All power levels
RX Band Noi se
-81
-78
dB m
-89
-86
dB m
Input VSWR
2.5:1
4
ADVANCED PRODUCT INFORMATION - Rev 0.7
01/2004
AWT6201
Table 7: DCS/PCS Electrical Specification
Test Conditions: Mode = DCS_PCS_TX_EN, V
BATT
= 3.5V, Z
IN
= Z
OUT
= 50Ω, T
C
= 25
±
3°C, P
IN
= 2dBm,
P
WIDTH
= 1154µs, Duty Cycle = 25%
PARAMETER
Frequency (F
IN
)
Input Power (P
IN
)
Output Power DCS/PCS (P
OUT
)
Degraded Output Power
MIN
1710
1850
0
30.5
27.7
TYP
MAX
1785
1910
UNITS
MHz
MHz
dB m
dB m
dB m
COMMENTS
2
31.5
28.7
4
V
RAMP
= 1.6V
V
BATT
= 3.0V, V
RAMP
= 1.6V,
P
IN
= 0dBm, T
C
= 85°C
P
IN
= 4dBm, V
BATT
= 3 to 4.8V
Mode = DCS_RX_EN or
PCS_RX_EN, see control
table
V
RAMP
=
0.2V, P
IN
= 4dBm,
V
BATT
= 3 to 4.8V
Mode = DCS_PCS_TX_EN,
see control table
V
BATT
= 3 to 4.8V,
P
OUT
= 0 to 30.4dBm
VSWR =10:1 All angles
V
BATT
= 3 to 4.8V,
P
OUT
= 0 to 30.4dBm,
TC = -20 to 85 °C
P
IN
= 2dBm, V
BATT
= 4.8V,
P
OUT
= 0 to 30.4dBm,
All phases of load
F
IN
= 1785 or 1910MHz,
F
OUT
= 1805 to 1880MHz, or
1930 to 1990MHz
P
OUT
= 0 to 30.4dBm,
RBW = VBW = 100kHz
All power levels
Forward Isolation
-55
-51
dB m
Forward Isolation (2)
-25
-10
dB m
Harmonics
2fo to 12.75 GHz
Stability:
< 1GHz
> 1GHz
Ruggedness:
-37
-33
dB m
-36
-30
10:1
VSWR
dB m
dB m
RX Band Noise
-88
-84
dB m
Input VSWR
2.5:1
ADVANCED PRODUCT INFORMATION - Rev 0.7
01/2004
5
