HELP3 UMTS/TD-SCDMA
Linear Power Amplifier Module
TM
AWT6241
Data Sheet - Rev 2.4
•
•
•
FEATURES
InGAP HBT Technology
Single mode control input
Internal Voltage Regulator eliminates need for
external Reference Voltage (V
REF
)
•
Low Leakage Current in Shutdown Mode: <1
mA
•
Optimized for a 50
V
System
•
Low Profile RoHS Compliant Package, 250
8C
MSL-3
UMTS/WCDMA
•
42% @ P
OUT
= +28.5 dBm
•
26% @ P
OUT
= +17 dBm (without DC/DC
Converter)
•
Low Quiescent Current: 8 mA (in low power
mode)
•
HSDPA Compliant (no backoff required)
TD-SCDMA MODE
•
38% @ P
OUT
= +27.5 dBm
•
22% @ P
OUT
= +16 dBm (without DC/DC
Converter)
M27 Package
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
APPLICATIONS
•
Wireless Handsets and Data Devices for
•
•
UMTS/WCDMA IMT 2.1 GHz band
TD-SCDMA 1.8/2.0 GHz bands
current increases handset talk and standby-time. The
self-contained 3 mm x 3 mm x 1 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50
Ω
system.
The AWT6241 HELP3
TM
PA is a next generation
product for UMTS handsets. This PA incorporates
ANADIGICS’ HELP3
TM
technology to provide low
power consumption without the need for an external
voltage regulator or DC/DC Converter. The AWT6241
is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. There are
two operating modes for optimum efficiency at high
and medium/low power output levels with a single
mode input. A shutdown mode with low leakage
PRODUCT DESCRIPTION
Figure 1: Block Diagram
04/2009
AWT6241
GND
V
BATT
RF
IN
V
MODE2
(N/C)
V
MODE1
V
ENABLE
1
2
3
4
5
GND
Figure 2: Pinout (X-ray Top View)
10
V
CC
9
8
7
6
RF
OUT
GND
GND
GND
Table 1: Pin Description
PIN
1
2
3
4
5
6
7
8
9
10
NAME
V
BATT
RF
IN
DESCRIPTION
Battery Voltage
RF Input
V
MODE2
(N/C)
No Connection
V
MODE1
V
ENABLE
GND
GND
GND
RF
OUT
V
CC
Mode Control Voltage 1
PA Enable Voltage
Ground
Ground
Ground
RF Output
Supply Voltage
2
Data Sheet - Rev 2.4
04/2009
AWT6241
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
Supply Voltage (V
CC
)
Battery Voltage (V
BATT
)
Control Voltages (V
MODE1
, V
ENABLE
)
RF Input Power (P
IN
)
Storage Temperature (T
STG
)
MIN
0
0
0
-
-40
MAX
+5
+6
+3.5
+10
+150
UNIT
V
V
V
dBm
°C
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Table 3: Operating Ranges
PARAMETER
Operating Frequency (f)
Supply Voltage (V
CC
)
Enable Voltage (V
ENABLE
)
Mode Control Voltage (V
MODE1
)
RF Output Power (P
OUT
), UMTS
R99 WCDMA, HPM
HSPA (MPR=0), HPM
R99 WCDMA, LPM
HSPA (MPR=0), LPM
RF Output Power (P
OUT
), TD-SCDMA
TD-SCDMA (HPM)
TD-SCDMA (LPM)
Case Temperature (T
C
)
MIN
1920
1880
2010
+3.2
+2.15
0
+2.15
0
28
(1)
27
(1)
16.5
(1)
15.5
(1)
27
15.5
-20
TYP
-
-
-
+3.4
+2.4
-
+2.4
-
28.5
27.5
17
16
27.5
16.0
-
MAX
1980
1920
2025
+4.2
+3.1
+0.5
+3.1
+0.5
28.5
27.5
17
16
27.5
16.0
+90
UNIT
MHz
COMMENTS
UMTS Band 1
TD-SCDMA Band
TD-SCDMA Band
P
OUT
< +28.5 dBm
PA "on"
PA "shut down"
Low Bias Mode
High Bias Mode
V
V
V
dBm
3GPP TS 34.121-1, Rel 7
Table C.11.1.3
dBm
°C
3GPP TS 25.102 Section
6.2.1
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
(1) For operation at V
cc
= +3.2 V, P
out
is derated by 0.5 dB.
Data Sheet - Rev 2.4
04/2009
3
AWT6241
Table 4: Electrical Specifications - UMTS/WCDMA Mode
(T
C
= +25 °C, V
CC
= +3.4 V, V
BATT
= +3.4 V, V
ENABLE
= +2.4 V, 50
Ω
system)
PARAMETER
MIN
25.0
12.0
-
-
-
-
39
23
-
-
-
-
-
-
-
-
-
-
TYP
27.5
14.0
-41
-42
-55
-55
42
26
8
0.3
0.3
3.0
<1
-137
-143
-42
-52
-
MAX
30.0
16.5
-38
-37.5
-48
-48
-
-
13
0.8
0.8
5
5
-135
-138
-35
-35
2:1
UNIT
COMMENTS
P
OUT
+28.5 dBm
+17 dBm
+28.5 dBm
+17 dBm
+28.5 dBm
+17 dBm
+28.5 dBm
+17 dBm
V
MODE1
= +2.4 V
through V
MODE
pin, V
MODE1
= +2.4 V
through V
ENABLE
pin, V
EN
= +2.4 V
through V
BATT
pin, V
MODE1
= +2.4 V
V
BATT
= +4.3 V, V
CC
= +4.3 V,
V
ENABLE
= 0 V, V
MODE1
= 0 V
V
MODE1
0V
2.4 V
0V
2.4 V
0V
2.4 V
0V
2.4 V
Gain
ACLR1 at 5 MHz offset
(1)
ACLR2 at 10 MHz offset
Power-Added Efficiency
(1)
(without DC/DC Converter)
Quiescent Current (Icq)
Low Bias Mode
Mode Control Current
Enable Current
BATT Current
Leakage Current
Noise in Receive Band
(2)
Harmonics
2fo
3fo, 4fo
Input Impedance
dB
dBc
dBc
%
mA
mA
mA
mA
µA
dBm/Hz
P
OUT
< +28.5 dBm, V
MODE
= 0 V
dBm/Hz
P
OUT
< 17 dBm, V
MODE
= +2.4 V
P
OUT
< +28.5 dBm
dBc
VSWR
Spurious Output Level
(all spurious outputs)
-
-
-70
dBc
P
OUT
< +28.5 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all operating
conditions
Applies over full operating range
Load mismatch stress with no
permanent degradation or failure
8:1
-
-
VSWR
Notes:
(1) ACLR and Efficiency measured at 1950 MHz.
(2) Noise measured at 2110 to 2170 MHz.
3. POUT <
+28.5 dBm; In-band load VSWR < 5:1; Out-of-band load VSWR < 10:1; Applies over all operating conditions.
4
Data Sheet - Rev 2.4
04/2009
AWT6241
Table 5: Electrical Specifications - TD-SCDMA Mode
(T
C
= +25 °C, V
CC
= +3.4 V, V
BATT
= +3.4 V, V
ENABLE
= +2.4 V, 50
Ω
system)
PARAMETER
MIN
24.0
11.5
-
-
-
-
35
18
-
-
-
-
-
-
-
-
-
-
8:1
TYP
27
13.5
-42
-42
-55
-55
38
22
8
0.3
0.3
3.0
<1
TBD
TBD
-
-
-
-
MAX
30.0
16.5
-38
-38
-48
-48
-
-
13
0.8
0.8
5
5
-
-
-35
-35
2:1
-
UNIT
COMMENTS
P
OUT
+27.5 dBm
+16 dBm
+27.5 dBm
+16 dBm
+27.5 dBm
+16 dBm
+27.5 dBm
+16 dBm
V
MODE1
= +2.4 V
through V
MODE
pin, V
MODE1
= +2.4 V
through V
ENABLE
pin, V
EN
= +2.4 V
through V
BATT
pin, V
MODE1
= +2.4 V
V
BATT
= +4.3 V, V
CC
= +4.3 V,
V
ENABLE
= 0 V, V
MODE1
= 0 V
P
OUT
< +27.5 dBm, V
MODE
= 0 V
P
OUT
< 16 dBm, V
MODE
= +2.4 V
P
OUT
< +27.5 dBm
V
MODE1
0V
2.4 V
0V
2.4 V
0V
2.4 V
0V
2.4 V
Gain
ACLR1 at 1.6 MHz offset
ACLR2 at 3.2 MHz offset
Power-Added Efficiency
(without DC/DC Converter)
Quiescent Current (Icq)
Low Bias Mode
Mode Control Current
Enable Current
BATT Current
Leakage Current
Noise Figure
Harmonics
2fo
3fo, 4fo
Input Impedance
Load mismatch stress with no
permanent degradation or failure
dB
dBc
dBc
%
mA
mA
mA
mA
µA
dB
dB
dBc
VSWR
VSWR
Applies over full operating range
Data Sheet - Rev 2.4
04/2009
5
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