AWT6251
PCS/WCDMA 3.4V/27.5 dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.3
FEATURES
•
•
•
•
•
•
•
•
InGaP HBT Technology
High Efficiency: 38%
Low Quiescent Current: 50 mA
Low Leakage Current in Shutdown Mode: <1
µA
V
REF
= +2.85 V (+2.75 V min over temp)
Optimized for a 50
Ω
System
Low Profile Miniature Surface Mount Package:
1.56 mm Max
RoHS Compliant Package Option, 250
o
C MSL-3
AWT6251
APPLICATIONS
•
Dual Mode 3GPP Wireless Handsets
M7 Package
10 Pin 4 mm x 4 mm x 1.5 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6251 meets the increasing demands for
higher output power in 3GPP handsets. The PA module
is optimized for V
REF
= +2.85 V, a requirement for
compatibility with the Qualcomm® 6250 chipset. The
device is manufactured on an advanced InGaP HBT
MMIC technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4 mm x 4 mm x 1.5 mm surface mount
package incorporates matching networks optimized
for output power, efficiency, and linearity in a 50
Ω
system.
GND at slug (pad)
V
CC
RF
IN
GND
1
2
3
Bias Control
10
V
CC
9
8
7
6
GND
RF
OUT
GND
GND
V
MODE
4
V
REF
5
Figure 1: Block Diagram
06/2005
AWT6251
GND
V
CC
RF
IN
GND
V
MODE
V
REF
1
2
3
4
5
GND
10 V
CC
9
8
7
6
GND
RF
OUT
GND
GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN
1
2
3
4
5
6
7
8
9
10
NAME
V
CC
RF
IN
GND
V
MODE
V
REF
GND
GND
RF
OUT
GND
V
CC
DESCRIPTION
Supply Voltage
RF Input
Ground
Mode Control Voltage
Reference Voltage
Ground
Ground
RF Output
Ground
Supply Voltage
2
PRELIMINARY DATA SHEET - Rev 1.3
06/2005
AWT6251
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
Supply Voltage (V
CC
)
Mode Control Voltage (V
MODE
)
Reference Voltage (V
REF
)
RF Input Power (P
IN
)
Storage Temperature (T
STG
)
MIN
0
0
0
-
-40
MAX
+5
+3.5
+3.5
+10
+150
UNIT
V
V
V
dB m
°C
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Table 3: Operating Ranges
PARAMETER
Operating Frequency (f)
Supply Voltage (V
CC
)
Reference Voltage (V
REF
)
Mode Control Voltage (V
MODE
)
RF Output Power (P
OUT
)
Case Temperature (T
C
)
MIN
1850
+3.2
-
+2.75
0
+2.5
0
+27.0
-10
(1)
TYP
-
+3.4
+1.5
+2.85
-
+2.8
-
+27.5
-
MAX
1910
+4.2
-
+2.95
+0.5
+3.1
+0.5
-
+90
UNIT
MHz
V
V
V
dB m
°C
COMMENTS
P
OUT
< +27.5 dBm
P
OUT
< +16 dBm
PA "on"
PA "shut down"
Low Bias Mode
High Bias Mode
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
Notes:
(1) For operation at V
CC
= +3.2 V and T
C
= +90
O
C, P
OUT
is derated by 0.5 dB.
PRELIMINARY DATA SHEET - Rev 1.3
06/2005
3
AWT6251
Table 4: Electrical Specifications
(T
C
= +25 °C, V
CC
= +3.4 V, V
REF
= +2.85 V, 50
Ω
system)
PARAMETER
MIN
24.5
22
17
-
-
-
-
-
-
35.5
8
19
-
-
-
-
-
-
-
-
-
TYP
26
23.5
20
-43
-40
-42
-61
-63
-60
38
9
21
53
49
3.5
0.3
<1
-138
-45
-55
-
MAX
29
27
23
-38
-38
-38
-48
-48
-48
-
-
-
68
65
5
0.5
5
-136
-30
-30
2:1
UNIT
dB
COMMENTS
P
OUT
= +27.5 dBm, V
MODE
= 0 V
P
OUT
= +16 dBm, V
MODE
= +2.85 V
P
OUT
= +16 dBm, V
CC
= 1.5 V,
V
MODE
= +2.85 V
P
OUT
= +27.5 dBm, V
MODE
= 0 V
P
OUT
= +16 dBm, V
MODE
= +2.85 V
P
OUT
= +16 dBm, V
CC
= 1.5 V,
V
MODE
= +2.85 V
P
OUT
= +27.5 dBm, V
MODE
= 0 V
P
OUT
= +16 dBm, V
MODE
= +2.85 V
P
OUT
= +16 dBm, V
CC
= 1.5 V,
V
MODE
= +2.85 V
P
OUT
= +27.5 dBm, V
MODE
= 0 V
P
OUT
= +16 dBm, V
MODE
= +2.85 V
P
OUT
= +16 dBm, V
CC
= 1.5 V,
V
MODE
= +2.85 V
V
MODE
= +2.85 V, V
CC
= +3.4 V
V
MODE
= +2.85 V, V
CC
= +1.5 V
through V
REF
pin
through V
MODE
pin, V
MODE
= +2.85 V
V
CC
= +4.2 V, V
REF
= 0 V,
V
MODE
= 0 V
Gain
ACLR1 at 5 MHz offset
dB c
ACLR2 at 10 MHz offset
dB c
Power-Added Efficiency
%
Quiescent Current (Icq)
Reference Current
Mode Control Current
Leakage Current
Noise in Receive Band
Harmonics
2fo
3fo, 4fo
Input Impedance
mA
mA
mA
µA
dBm/Hz 1930 MHz to 1990 MHz
dB c
VSWR
P
OUT
< +27.5 dBm, V
MODE
= 0 V
Spurious Output Level
(all spurious outputs)
-
-
-70
dB c
P
OUT
< +27.5 dBm
In-band load VSWR < 5:1
Out-of-band load VSWR < 10:1
Applies over all voltage and
temperature operating ranges
Applies over full operating range
Load mismatch stress with no
permanent degradation or failure
10:1
-
-
VSWR
Notes:
1. ACLR and Efficiency are measured at 1850 MHz.
4
PRELIMINARY DATA SHEET - Rev 1.3
06/2005
AWT6251
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to both the V
REF
and V
MODE
voltages.
Bias Modes
The power amplifier may be placed in either a Low
Bias mode or a High Bias mode by applying the
appropriate logic level (see Operating Ranges table)
to the V
MODE
voltage. The Bias Control table lists the
recommended modes of operation for various
applications.
Table 5: Bias Control
APPLICATION
CDMA - low power
CDMA - high power
Shutdown
P
OUT
LE V E LS
<+16dBm
>+16 dBm
-
BIAS
MODE
Low
High
Shutdown
V
R EF
V
MODE
V
CC
> +1.5
+3.4
-
+2.85 V +2.85 V
+2.85 V
0V
0V
0V
VCC1
VCC2
C1
0.01µF
RF IN
1
2
3
V
CC
RF
IN
GND
V
MODE
V
REF
V
CC
GND
RF
OUT
GND
GND
GND
at slug
10
9
8
7
6
C3
0.01µF
C4
2.2µF ceramic
RF OUT
VMODE
VREF
4
5
C2
0.01µF
Figure 3: Application Circuit Schematic
PRELIMINARY DATA SHEET - Rev 1.3
06/2005
5
