ZeroIC
FEATURES
TM
Cellular CDMA 3.4 V/28 dBm
Linear Power Amplifier Module
Data Sheet - Rev 2.1
AWT6331
•
•
•
•
•
•
•
•
•
InGaP HBT Technology
High Efficiency:
39 % @ +28 dBm output
Zero Quiescent Current in Switch Mode
Internal Voltage Regulation
Optimized for a 50
Ω
System
Low Profile Surface Mount Package: 1 mm
CDMA 1XRTT, 1xEV-DO Compliant
RoHS Compliant Package, 250
o
C MSL-3
Suitable for BC10 (806-824 MHz) Applications
band
CDMA/EVDO Cell-band Wireless Handsets and
Data Devices
APPLICATIONS
•
M27 Package
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
RF switch mode, current consumption is less than 10
A,
reducing the average current consumption 70%
more than a HELP2™ PA over the CDG profile. Its
integrated voltage regulator eliminates the need for
external components further reducing size and BOM
cost. The 3 mm x 3 mm x 1 mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50
system.
PRODUCT DESCRIPTION
The AWT6331 is a new product in the revolutionary
ZeroIC™ PA family. The AWT6331 uses ANADIGICS’
exclusive InGaP-Plus™ technology, which combines
HBT and pHEMT devices on the same die, to enable
state-of-the-art reliability, temperature stability, and
ruggedness.
The AWT6331 has a unique architecture with two RF
inputs. One input drives the power amplifier while the
other input drives an RF switch that bypasses the
power amplifier, going directly to the RF output. The
mode control logic selects the PA or the RF switch. In
GND
at
slug (pad)
V
EN
1
Bias Control
10
GND
V
MODE
2
9
GND
RF
IN
3
8
RF
OUT
RF
IN_Switch
4
7
V
CC
V
BATT
5
6
V
CC
Figure 1: Block Diagram
10/2008
AWT6331
GND
V
EN
1
10
GND
V
MODE
2
9
GND
RF
IN_PA
3
8
RF
OUT
RF
IN_Switch
4
7
V
CC
V
BATT
5
6
V
CC
GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
PIN
1
2
3
4
5
6
7
8
9
10
NAME
V
EN
V
MODE
RF
IN_PA
RF
IN_SWITCH
V
BATT
V
CC
V
CC
RF
OUT
GND
GND
DESCRIPTION
PA Enable Voltage
Mode Control
RF Input to PA
RF Input to Switch
Battery Voltage
Supply Voltage
Supply Voltage
RF Output
Ground
Ground
2
Data Sheet - Rev 2.1
10/2008
AWT6331
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
Supply Voltage (V
CC
and V
BATT
)
Mode Control Voltage (V
MODE
)
Enable Voltage (V
EN
)
RF Input Power (P
IN
) to PA
RF Input Power (P
IN
) to Switch
Storage Temperature (T
STG
)
MIN
0
0
0
-
-
-40
MAX
+5
+3.5
+3.5
+10
+20
+150
UNIT
V
V
V
dBm
dBm
°C
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Table 3: Operating Ranges
PARAMETER
Operating Frequency (f)
Supply Voltage (V
CC
and V
BATT
)
Enable Voltage (V
EN
)
Mode Control Voltage (V
MODE
)
RF Output Power (P
OUT
)
Case Temperature (T
C
)
MIN
824
+3.2
+2.2
0
+2.2
0
27.5
(1)
-30
TYP
-
+3.4
+2.4
-
+2.4
-
28.0
-
MAX
849
+4.2
+3.1
+0.5
+3.1
+0.5
-
+85
UNIT
MHz
V
V
V
dBm
°C
PA "on", Switch "on"
PA "shut down"
PA Mode
Switch Mode
CDMA
COMMENTS
The device may be operated safely over these conditions; however, parametric performance is guaranteed only
over the conditions defined in the electrical specifications.
Notes:
(1) For operation at V
CC
= +3.2 V, P
OUT
is derated by 0.5 dB.
Data Sheet - Rev 2.1
10/2008
3
AWT6331
Table 4: Electrical Specifications - CDMA Operation (IS-95 Modulation)
(T
C
= +25 °C, V
BATT
= V
CC
= +3.4 V, V
EN
= +2.4 V, 50
Ω
system)
PARAMETER
Gain
Insertion Loss
Adjacent Channel Power
at
885
kHz offset
(1)
Primary Channel BW = 1.23 MHZ
Adjacent Channel BW = 30 kHz
Adjacent Channel Power
at
1.98
MHz offset
(1)
Primary Channel BW = 1.23 MHZ
Adjacent Channel BW = 30 kHz
Isolation
Power-Added Efficiency
(1)
Enable Current
Mode Control Current
MIN
25
-
TYP
28
0.7
MAX
30.5
1.5
UNIT
dB
COMMENTS
P
OUT
= +28 dBm, V
MODE
= +2.4 V
V
MODE
= 0 V
-
-
-50
-70
-46.5
-
dBc
P
OUT
= +28 dBm, V
MODE
= +2.4 V
V
MODE
= 0 V
-
-
32
36
-
-
-
-58.5
-70
40
39
<0.1
<0.01
<10
<10
-135
-40
-45
-
-56
-
-
-
0.25
0.1
15
dBc
dB
%
mA
mA
P
OUT
= +28 dBm, V
MODE
= +2.4 V
V
MODE
= 0 V
RF
OUT
to RF
IN_SWITCH
, V
MODE
= +2.4
V, PA "on"
P
OUT
= +28 dBm, V
MODE
= +2.4 V
through V
EN
pin, V
EN
= +2.4 V
through V
MODE
pin, V
MODE
= +2.4 V
V
CC
= +4.2 V, V
EN
= 0 V,
V
MODE
= 0 V or +2.4 V
V
CC
= +4.2 V, V
EN
= +2.4 V,
V
MODE
= 0 V, Switch Mode
Leakage Current
-
Noise in Receive Band
Harmonics
2fo
3fo, 4fo
Input Impedance
Spurious Output Level
(all spurious outputs)
Load mismatch stress with no
permanent degradation or failure
-
-
-
-
18
-133
-30
-30
2:1
A
dBm/Hz 869 MHz to 894 MHz
dBc
VSWR
P
OUT
< +28 dBm
In-band Load VSWR < 5:1
Out-of-band Load VSWR < 10:1
Applies over all operating conditions
Applies over all operating conditions
CW Measurement
-
-
-65
dBc
8:1
-
-
VSWR
Notes:
(1) PAE and ACP limit applies at 836.5 MHz (IS-95 modulation).
4
Data Sheet - Rev 2.1
10/2008
AWT6331
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying a logic low levels (see Operating
Ranges table) to both the V
EN
and V
MODE
voltages.
Power Modes
The power amplifier may be placed in either a Low
Power mode or a High Power mode by applying the
appropriate logic level (see Operating Ranges table)
to the V
MODE
voltage. The Power Control table lists
the recommended modes of operation for various
applications.
Table 5: Power Control
APPLICATION
CDMA - Switch Bypass
Shutdown
CDMA - PA
Shutdown
P
OUT
LEVELS
-*
-*
All
-
POWER
MODE
Low
Low
High
Shutdown
V
EN
+2.4 V
0V
+2.4 V
0V
V
MODE
0V
+2.4 V
+2.4 V
0V
*Dependent upon typical output power from Transceiver and phone design.
V
ENABLE
1
V
MODE
2
3
4
V
BATT
5
V
ENABLE
V
MODE
RF
IN_PA
RF
IN_SWITCH
V
BATT
GND
at
slug
GND
GND
RF
OUT
V
CC
V
CC
10
9
8
7
6
V
CC
RF
IN_PA
RF
IN_SWITCH
C6
68 pF
RF
OUT
C1
2.2 µF
C2
0.01
F
GND
at slug
C3
330 pF
C4
0.01
µF
C5
2.2 µF
Figure 3: Application Circuit
Data Sheet - Rev 2.1
10/2008
5
