AY08A3-**
AY08A4-**
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
16-Pin Multiple
Circuit Triac
0.8 Amperes/400-700 Volts
16
9
D
C
E
N∞
Description:
A triac is a solid state silicon AC
switch which may be gate
triggered from an off-state to an
on-state for either polarity of
applied voltage.
Features:
1
8
Planar Passivation
SEATING PLANE
B
A
F
J
G
H
K
M
L
Surface Mount Type
Multiple Circuits in
one Package
Applications:
Electric Fan
Air Cleaner
Small Motor Control
Ordering Information:
Example: Select the complete
part number from the table
below -i.e. AY08A4-14 is a
0.8 Ampere, 4 Circuit, 700V,
16-Pin Multiple Circuit Triac.
Number
of Circuits
3
4
Voltage
(x 50)
-8
-12
-14
AY08A3-**: No chip
T
2
16
T
2
T
2
T
2
T
2
T
2
T
2
T
2
9
1
8
T
1
G
T
1
G
T
1
G
T
1
G
Type
AY08A
Outline Drawing
Dimension
A
B
C
D
E
F
Inches
1.8 Max.
0.75±0.01
0.25±0.01
0.01
0.3
0.12 Min.
Millimeters
4.5 Max.
19.0±0.2
6.3±0.15
0.27 +0.07/-0.05
7.62
3.0 Min.
Dimension
G
H
J
K
L
M
Inches
0.1
Millimeters
2.54
0.06 +0.01/-0 1.5 +0.3/-0.1
0.02
0.5±0.1
0.04 +0.01/-0 1.0 +0.3/-0.1
0.02 Min.
0.13
0.51 Min.
3.3
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
AY08A3-**
AY08A4-**
16-Pin Multiple Circuit Triac
0.8 Amperes/400-700 Volts
Absolute Maximum Ratings (for One Chip),
T
j
= 25°C unless otherwise specified
Characteristics
Repetitive Peak Off-state Voltage, Gate Open
Non-Repetitive Peak Off-state Voltage, Gate Open
On-state Current, T
c
= 86°C
Non-repetitive Peak Surge, One Cycle (60Hz)
I
2
t for Fusing, t = 8.3 msec
Peak Gate Power Dissipation, 20 msec
Average Gate Power Dissipation
Peak Gate Current
Peak Gate Voltage
Storage Temperature
Operating Temperature
Symbol
V
DRM
V
DSM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(avg)
I
GM
V
GM
T
stg
T
j
AY08A*-08
400
500
0.8
8
0.26
1
0.1
0.8
6
-40 to 125
-40 to 125
AY08A*-12
600
720
0.8
8
0.26
1
0.1
0.8
6
-40 to 125
-40 to 125
AY08A*-14
700
840
0.8
8
0.26
1
0.1
0.8
6
-40 to 125
-40 to 125
Units
Volts
Volts
Amperes
Amperes
A
2
sec
Watts
Watts
Amperes
Volts
°C
°C
Electrical and Thermal Characteristics (for One Chip),
T
j
= 25°C unless otherwise specified
Characteristics
Repetitive Off-state Current, Peak
Peak On-state Voltage
Thermal Resistance
Junction to Ambient
Gate — Parameters
Gate Current to Trigger II
Gate Current to Trigger III
Gate Voltage to Trigger II
Gate Voltage to Trigger III
Non-triggering Gate Voltage
Critical Rate-of-Rise of Commutating
Off-state Voltage
I
RGT
I
I
RGT
III
V
RGT
I
V
RGT
III
V
GD
(dv/dt)
c
T
j
= 25°C, V
D
= 6V
R
L
= 6 , R
G
= 330
T
j
= 25°C, V
D
= 6V
R
L
= 6 , R
G
= 330
T
j
= 125°C, V
D
= 1/2 V
DRM
T
j
= 125°C
(dv/dt)
c
= -0.4A/ms, V
D
= 400V
–
–
–
–
0.1
0.5
–
–
–
–
–
5.0
5.0
2.0
2.0
–
mA
mA
Volts
Volts
Volts
V/µs
R
th(j-a)
–
–
–
120
°C/Watt
Symbol
I
DRM
V
TM
Test Conditions
V
DRM
applied, T
j
= 125°C
T
c
= 25°C, I
TM
= 1.2A
Min.
–
–
Typ.
–
–
Max.
1.0
2.0
Units
mA
Volts
2
