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AZ23B3V9-G

12.05 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

器件类别:半导体    分立半导体   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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AZ23-G-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes, Dual
FEATURES
2
1
• Dual silicon planar Zener diodes, common
anode
• The Zener voltages are graded according to the
international E24 standard. Standard Zener
voltage tolerance is ± 5 %, indicated by the “C”
in the ordering code. Replace “C” with “B” for
2 % tolerance.
• The parameters are valid for both diodes in one
case.
V
Z
and
R
zj
of the two diodes in one case is
5 %
3
20456
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.7 to 51
5
Pulse current
Dual common anode
UNIT
V
mA
• AEC-Q101 qualified
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
• Base P/N-G3 - green, commercial grade
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
AZ23C2V7-G3-08 to AZ23C51-G3-08
3000 (8 mm tape on 7" reel)
AZ23B2V7-G3-08 to AZ23B51-G3-08
AZ23-G-series
AZ23C2V7-G3-18 to AZ23C51-G3-18
10 000 (8 mm tape on 13" reel)
AZ23B2V7-G3-18 to AZ23B51-G3-18
10 000
15 000
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
PACKAGE
PACKAGE NAME
SOT-23
WEIGHT
8.1 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Thermal resistance, junction
to ambient air
Junction temperature
Storage temperature range
Zener current
Operating temperature range
TEST CONDITION
Device on fiberglass substrate,
see layout on page 6
Device on fiberglass substrate,
see layout on page 6
SYMBOL
P
tot
R
thJA
T
j
T
stg
I
Z
T
op
VALUE
300
420
150
- 65 to + 150
P
tot
/V
Z
- 55 to + 150
UNIT
mW
K/W
°C
°C
mA
°C
Rev. 1.3, 08-Feb-13
Document Number: 85867
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AZ23-G-Series
www.vishay.com
Vishay Semiconductors
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
VZ
at I
ZT
10
-4
/°C
MAX.
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
MIN.
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
-3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
MAX.
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
(1)
PART NUMBER
MARKING
CODE
MIN.
AZ23C2V7-G
AZ23C3V0-G
AZ23C3V3-G
AZ23C3V6-G
AZ23C3V9-G
AZ23C4V3-G
AZ23C4V7-G
AZ23C5V1-G
AZ23C5V6-G
AZ23C6V2-G
AZ23C6V8-G
AZ23C7V5-G
AZ23C8V2-G
AZ23C9V1-G
AZ23C10-G
AZ23C11-G
AZ23C12-G
AZ23C13-G
AZ23C15-G
AZ23C16-G
AZ23C18-G
AZ23C20-G
AZ23C22-G
AZ23C24-G
AZ23C27-G
AZ23C30-G
AZ23C33-G
AZ23C36-G
AZ23C39-G
AZ23C43-G
AZ23C47-G
AZ23C51-G
D41
D42
D43
D44
D45
D46
D47
D48
D49
D50
D51
D52
D53
D54
D55
D56
D57
D58
D59
D60
D61
D62
D63
D64
D65
D66
D67
D68
D69
D70
D71
D72
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
V
Z
at I
ZT1
V
NOM.
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
MAX.
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
50
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
TEST
CURRENT
I
ZT1
mA
I
ZT2
REVERSE
VOLTAGE
V
R
at I
R
V
MAX.
-
-
-
-
-
-
-
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
-
-
-
-
-
-
-
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
nA
MAX.
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
Note
(1)
Tested with pulses t = 5 ms
p
Rev. 1.3, 08-Feb-13
Document Number: 85867
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AZ23-G-Series
www.vishay.com
Vishay Semiconductors
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
VZ
at I
ZT
10
-4
/°C
MAX.
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
MIN.
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
-3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
MAX.
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
0.5
0.5
10
10
10
10
10
10
10
12
12
12
12
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
(1)
PART NUMBER
MARKING
CODE
MIN.
AZ23B2V7-G
AZ23B3V0-G
AZ23B3V3-G
AZ23B3V6-G
AZ23B3V9-G
AZ23B4V3-G
AZ23B4V7-G
AZ23B5V1-G
AZ23B5V6-G
AZ23B6V2-G
AZ23B6V8-G
AZ23B7V5-G
AZ23B8V2-G
AZ23B9V1-G
AZ23B10-G
AZ23B11-G
AZ23B12-G
AZ23B13-G
AZ23B15-G
AZ23B16-G
AZ23B18-G
AZ23B20-G
AZ23B22-G
AZ23B24-G
AZ23B27-G
AZ23B30-G
AZ23B33-G
AZ23B36-G
AZ23B39-G
AZ23B43-G
AZ23B47-G
AZ23B51-G
D41
D42
D43
D44
D45
D46
D47
D48
D49
D50
D51
D52
D53
D54
D55
D56
D57
D58
D59
D60
D61
D62
D63
D64
D65
D66
D67
D68
D69
D70
D71
D72
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5
5.49
6.08
6.66
7.35
8.04
8.92
9.8
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50
V
Z
at I
ZT1
V
NOM.
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
MAX.
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.2
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
TEST
CURRENT
I
ZT1
mA
I
ZT2
REVERSE
VOLTAGE
V
R
at I
R
V
MAX.
-
-
-
-
-
-
-
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
-
-
-
-
-
-
-
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
nA
MAX.
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
Note
(1)
Tested with pulses t = 5 ms
p
Rev. 1.3, 08-Feb-13
Document Number: 85867
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AZ23-G-Series
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
mA
10
3
10
2
Ω
10
3
5
4
3
2
Vishay Semiconductors
R
zth
= R
thA
x
V
Z
x
Δ
V
Z
Δ
T
j
I
F
10
1
10
-1
10
-2
10
-3
10
-4
10
-5
0
18114
T
J
= 100 °C
R
zth
10
2
T
J
= 25 °C
5
4
3
2
10
5
4
3
2
negative
positive
1
0.2
0.4
0.6
0.8
1V
1
18121
2
3
4 5
10
2
3 4 5
100
V
V
F
Fig. 1 -
Forward Characteristics
V
Z
at I
Z
= 5 mA
Fig. 4 -
Thermal Differential Resistance vs. Zener Voltage
Ω
100
7
5
4
mW
500
400
P
tot
300
R
zj
3
2
10
200
7
5
4
100
3
2
0
0
18115
1
100
200 °C
1
18122
2
3
4 5
T
j
= 25 °C
I
Z
= 5 mA
10
2
3 4 5
100
V
T
amb
V
Z
Fig. 2 -
Admissible Power Dissipation vs. Ambient Temperature
Fig. 5 -
Dynamic Resistance vs. Zener Voltage
mV/°C
25
20
15
10
5
0
-5
5 mA
I
Z
= 1 mA
20 mA
Ω
10
3
7
5
4
T
j
= 25 °C
R
zj
3
2
47 + 51
43
39
36
Δ
V
Z
Δ
T
j
10
2
7
5
4
3
2
10
0.1
18120
2
3
4 5
1
2
3 4 5
I
Z
10
mA
1
18123
2
3
4 5
10
2
3 4 5
100
V
V
Z
Fig. 3 -
Dynamic Resistance vs. Zener Current
Fig. 6 -
Temperature Dependence of Zener Voltage vs.
Zener Voltage
Rev. 1.3, 08-Feb-13
Document Number: 85867
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AZ23-G-Series
www.vishay.com
Vishay Semiconductors
V
1.6
15
10
V
0.8
0.7
0.6
V
Z
at I
Z
= 5 mA
25
1.4
1.2
Δ
V
Z
= R
zth
x I
Z
Δ
V
Z
0.5
0.4
0.3
0.2
0.1
0
-1
- 0.2
0
18124
3.6
4.7
8
7
6.2
5.9
5.6
5.1
Δ
V
Z
1
0.8
0.6
0.4
0.2
0
- 0.2
- 0.4
20
40
60
80
100 120 140 C
18127
1
2
3
4 5
10
2
3 4 5
100
V
T
j
V
Z
at I
Z
= 5 mA
Fig. 10 -
Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Fig. 7 -
Change of Zener Voltage vs. Junction Temperature
mV/°C
100
I
Z
= 5 mA
V
5
Δ
V
Z
= R
zth
x I
Z
Δ
V
Z
Δ
T
j
80
4
Δ
V
Z
60
3
I
Z
= 5 mA
40
2
20
1
I
Z
= 2 mA
0
0
18125
0
20
40
60
80
100
V
0
18128
20
40
60
80
100
V
V
Z
V
Z
Fig. 8 -
Temperature Dependence of Zener Voltage vs.
Zener Voltage
Fig. 11 -
Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
mA
50
V
9
8
7
T
j
= 25 °C
2.7
3.9 5.6
3.3 4.7
6.8
8.2
40
51
43
36
Δ
V
Z
6
5
4
3
2
1
0
-1
0
18126
l
Z
30
20
Test
current
I
Z
5 mA
10
I
Z
= 2 mA
20
40
60
80 100 120
T
j
140 °C
0
0
18111
1
2
3
4
5
6
V
Z
7
8
9 10
V
Fig. 9 -
Change of Zener Voltage vs. Junction Temperature
Fig. 12 -
Breakdown Characteristics
Rev. 1.3, 08-Feb-13
Document Number: 85867
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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