首页 > 器件类别 > 分立半导体 > 二极管

AZ23B6V8-V-G-18

DIODE VOLTAGE REGULATOR DIODE, Voltage Regulator Diode

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

下载文档
器件参数
参数名称
属性值
厂商名称
Vishay(威世)
包装说明
R-PDSO-G3
Reach Compliance Code
unknown
ECCN代码
EAR99
配置
COMMON ANODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
ZENER DIODE
最大动态阻抗
4.5 Ω
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
湿度敏感等级
1
元件数量
2
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性
UNIDIRECTIONAL
最大功率耗散
0.3 W
参考标准
AEC-Q101
标称参考电压
6.8 V
表面贴装
YES
技术
ZENER
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
10
最大电压容差
2.06%
工作测试电流
5 mA
文档预览
AZ23-V-G-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes, Dual
FEATURES
2
1
• Dual silicon planar Zener diodes, common
anode
• The Zener voltages are graded according to the
international E 24 standard
3
20456
• The parameters are valid for both diodes in one
case.
V
Z
and
R
zj
of the two diodes in one case
is
5 %
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.7 to 51
5
Pulse current
Dual
UNIT
V
mA
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
ORDERING INFORMATION
DEVICE NAME
AZ23-V-G-series
AZ23-V-G-series
ORDERING CODE
AZ23-V-G-series-18
AZ23-V-G-series-08
TAPED UNITS PER REEL
10 000 (8 mm tape on 13" reel)
3000 (8 mm tape on 7" reel)
MINIMUM ORDER QUANTITY
10 000
15 000
PACKAGE
PACKAGE NAME
SOT-23
WEIGHT
8.1 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Junction to ambient air
Junction temperature
Storage temperature range
Zener current
TEST CONDITION
Device on fiberglass substrate,
see layout on page 6
Device on fiberglass substrate,
see layout on page 6
SYMBOL
P
tot
R
thJA
T
j
T
stg
I
Z
VALUE
300
420
150
- 65 to + 150
P
tot
/V
Z
UNIT
mW
K/W
°C
°C
mA
Rev. 1.2, 31-Aug-11
Document Number: 85867
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AZ23-V-G-Series
www.vishay.com
Vishay Semiconductors
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
VZ
at I
ZT
10
-4
/°C
MAX.
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
MIN.
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
-3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
MAX.
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
(1)
PART NUMBER
MARKING
CODE
MIN.
AZ23C2V7-V-G
AZ23C3V0-V-G
AZ23C3V3-V-G
AZ23C3V6-V-G
AZ23C3V9-V-G
AZ23C4V3-V-G
AZ23C4V7-V-G
AZ23C5V1-V-G
AZ23C5V6-V-G
AZ23C6V2-V-G
AZ23C6V8-V-G
AZ23C7V5-V-G
AZ23C8V2-V-G
AZ23C9V1-V-G
AZ23C10-V-G
AZ23C11-V-G
AZ23C12-V-G
AZ23C13-V-G
AZ23C15-V-G
AZ23C16-V-G
AZ23C18-V-G
AZ23C20-V-G
AZ23C22-V-G
AZ23C24-V-G
AZ23C27-V-G
AZ23C30-V-G
AZ23C33-V-G
AZ23C36-V-G
AZ23C39-V-G
AZ23C43-V-G
AZ23C47-V-G
AZ23C51-V-G
D41
D42
D43
D44
D45
D46
D47
D48
D49
D50
D51
D52
D53
D54
D55
D56
D57
D58
D59
D60
D61
D62
D63
D64
D65
D66
D67
D68
D69
D70
D71
D72
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
V
Z
at I
ZT1
V
NOM.
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
MAX.
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
50
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
TEST
CURRENT
I
ZT1
mA
I
ZT2
REVERSE
VOLTAGE
V
R
at I
R
V
MAX.
-
-
-
-
-
-
-
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
-
-
-
-
-
-
-
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
nA
MAX.
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
Note
(1)
Tested with pulses t = 5 ms
p
Rev. 1.2, 31-Aug-11
Document Number: 85867
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AZ23-V-G-Series
www.vishay.com
Vishay Semiconductors
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
VZ
at I
ZT
10
-4
/°C
MAX.
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
MIN.
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
-3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
MAX.
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
0.5
0.5
10
10
10
10
10
10
10
12
12
12
12
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
(1)
PART NUMBER
MARKING
CODE
MIN.
AZ23B2V7-V-G
AZ23B3V0-V-G
AZ23B3V3-V-G
AZ23B3V6-V-G
AZ23B3V9-V-G
AZ23B4V3-V-G
AZ23B4V7-V-G
AZ23B5V1-V-G
AZ23B5V6-V-G
AZ23B6V2-V-G
AZ23B6V8-V-G
AZ23B7V5-V-G
AZ23B8V2-V-G
AZ23B9V1-V-G
AZ23B10-V-G
AZ23B11-V-G
AZ23B12-V-G
AZ23B13-V-G
AZ23B15-V-G
AZ23B16-V-G
AZ23B18-V-G
AZ23B20-V-G
AZ23B22-V-G
AZ23B24-V-G
AZ23B27-V-G
AZ23B30-V-G
AZ23B33-V-G
AZ23B36-V-G
AZ23B39-V-G
AZ23B43-V-G
AZ23B47-V-G
AZ23B51-V-G
D41
D42
D43
D44
D45
D46
D47
D48
D49
D50
D51
D52
D53
D54
D55
D56
D57
D58
D59
D60
D61
D62
D63
D64
D65
D66
D67
D68
D69
D70
D71
D72
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5
5.49
6.08
6.66
7.35
8.04
8.92
9.8
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50
V
Z
at I
ZT1
V
NOM.
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
MAX.
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.2
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
TEST
CURRENT
I
ZT1
mA
I
ZT2
REVERSE
VOLTAGE
V
R
at I
R
V
MAX.
-
-
-
-
-
-
-
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
-
-
-
-
-
-
-
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
nA
MAX.
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
Note
(1)
Tested with pulses t = 5 ms
p
Rev. 1.2, 31-Aug-11
Document Number: 85867
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AZ23-V-G-Series
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
mA
10
3
10
2
Ω
10
3
5
4
3
2
Vishay Semiconductors
R
zth
= R
thA
x
V
Z
x
Δ
V
Z
Δ
T
j
I
F
10
1
10
-1
10
-2
10
-3
10
-4
10
-5
0
18114
T
J
= 100 °C
R
zth
10
2
T
J
= 25 °C
5
4
3
2
10
5
4
3
2
negative
positive
1
0.2
0.4
0.6
0.8
1V
1
18121
2
3
4 5
10
2
3 4 5
100
V
V
F
Fig. 1 -
Forward Characteristics
V
Z
at I
Z
= 5 mA
Fig. 4 -
Thermal Differential Resistance vs. Zener Voltage
Ω
100
7
5
4
mW
500
400
P
tot
300
R
zj
3
2
10
200
7
5
4
100
3
2
0
0
18115
1
100
200 °C
1
18122
2
3
4 5
T
j
= 25 °C
I
Z
= 5 mA
10
2
3 4 5
100
V
T
amb
V
Z
Fig. 2 -
Admissible Power Dissipation vs. Ambient Temperature
Fig. 5 -
Dynamic Resistance vs. Zener Voltage
mV/°C
25
20
15
10
5
0
-5
5 mA
I
Z
= 1 mA
20 mA
Ω
10
3
7
5
4
T
j
= 25 °C
R
zj
3
2
47 + 51
43
39
36
Δ
V
Z
Δ
T
j
10
2
7
5
4
3
2
10
0.1
18120
2
3
4 5
1
2
3 4 5
I
Z
10
mA
1
18123
2
3
4 5
10
2
3 4 5
100
V
V
Z
Fig. 3 -
Dynamic Resistance vs. Zener Current
Fig. 6 -
Temperature Dependence of Zener Voltage vs.
Zener Voltage
Rev. 1.2, 31-Aug-11
Document Number: 85867
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AZ23-V-G-Series
www.vishay.com
Vishay Semiconductors
V
1.6
15
10
V
0.8
0.7
0.6
V
Z
at I
Z
= 5 mA
25
1.4
1.2
Δ
V
Z
= R
zth
x I
Z
Δ
V
Z
0.5
0.4
0.3
0.2
0.1
0
-1
- 0.2
0
18124
3.6
4.7
8
7
6.2
5.9
5.6
5.1
Δ
V
Z
1
0.8
0.6
0.4
0.2
0
- 0.2
- 0.4
20
40
60
80
100 120 140 C
18127
1
2
3
4 5
10
2
3 4 5
100
V
T
j
V
Z
at I
Z
= 5 mA
Fig. 10 -
Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Fig. 7 -
Change of Zener Voltage vs. Junction Temperature
mV/°C
100
I
Z
= 5 mA
V
5
Δ
V
Z
= R
zth
x I
Z
Δ
V
Z
Δ
T
j
80
4
Δ
V
Z
60
3
I
Z
= 5 mA
40
2
20
1
I
Z
= 2 mA
0
0
18125
0
20
40
60
80
100
V
0
18128
20
40
60
80
100
V
V
Z
V
Z
Fig. 8 -
Temperature Dependence of Zener Voltage vs.
Zener Voltage
Fig. 11 -
Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
mA
50
V
9
8
7
T
j
= 25 °C
2.7
3.9 5.6
3.3 4.7
6.8
8.2
40
51
43
36
Δ
V
Z
6
5
4
3
2
1
0
-1
0
18126
l
Z
30
20
Test
current
I
Z
5 mA
10
I
Z
= 2 mA
20
40
60
80 100 120
T
j
140 °C
0
0
18111
1
2
3
4
5
6
V
Z
7
8
9 10
V
Fig. 9 -
Change of Zener Voltage vs. Junction Temperature
Fig. 12 -
Breakdown Characteristics
Rev. 1.2, 31-Aug-11
Document Number: 85867
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
查看更多>
热门器件
热门资源推荐
器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
需要登录后才可以下载。
登录取消