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AZ23C11-V-G-GS08

DIODE 11 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-3, Voltage Regulator Diode

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

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器件参数
参数名称
属性值
厂商名称
Vishay(威世)
包装说明
R-PDSO-G3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
配置
COMMON ANODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
ZENER DIODE
最大动态阻抗
70 Ω
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
湿度敏感等级
1
元件数量
2
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性
UNIDIRECTIONAL
最大功率耗散
0.3 W
认证状态
Not Qualified
标称参考电压
11 V
表面贴装
YES
技术
ZENER
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
10
最大电压容差
5.45%
工作测试电流
5 mA
文档预览
AZ23-V-G-Series
Vishay Semiconductors
Small Signal Zener Diodes, Dual
Features
• Dual silicon planar Zener diodes,
common anode
• The Zener voltages are graded
according to the international E 24
standard
• The parameters are valid for both diodes
in one case.
ΔV
Z
and
ΔR
zj
of the two
diodes in one case is
5 %
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
2
1
20512
1
3
20456
Mechanical Data
Case:
SOT-23
Weight:
approx. 8.1 mg
Packaging codes/options:
GS18/10 k per 13" reel, (8 mm tape), 10 k/box
GS08/3 k per 7" reel, (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Test conditions
Device on fiberglass substrate,
see layout on page 6
Symbol
P
tot
Value
300
Unit
mW
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
Test conditions
Device on fiberglass substrate,
see layout on page 6
Symbol
R
thJA
T
j
T
stg
Value
420
150
- 65 to + 150
Unit
K/W
°C
°C
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
Document Number 85867
Rev. 1.1, 26-Aug-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
AZ23-V-G-Series
Vishay Semiconductors
Electrical Characteristics
Zener voltage range
1)
Marking
code
V
Z
at I
ZT
V
min.
AZ23C2V7-V-G
AZ23C3V0-V-G
AZ23C3V3-V-G
AZ23C3V6-V-G
AZ23C3V9-V-G
AZ23C4V3-V-G
AZ23C4V7-V-G
AZ23C5V1-V-G
AZ23C5V6-V-G
AZ23C6V2-V-G
AZ23C6V8-V-G
AZ23C7V5-V-G
AZ23C8V2-V-G
AZ23C9V1-V-G
AZ23C10-V-G
AZ23C11-V-G
AZ23C12-V-G
AZ23C13-V-G
AZ23C15-V-G
AZ23C16-V-G
AZ23C18-V-G
AZ23C20-V-G
AZ23C22-V-G
AZ23C24-V-G
AZ23C27-V-G
AZ23C30-V-G
AZ23C33-V-G
AZ23C36-V-G
AZ23C39-V-G
AZ23C43-V-G
AZ23C47-V-G
AZ23C51-V-G
D41
D42
D43
D44
D45
D46
D47
D48
D49
D50
D51
D52
D53
D54
D55
D56
D57
D58
D59
D60
D61
D62
D63
D64
D65
D66
D67
D68
D69
D70
D71
D72
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
max.
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Dynamic resistance
R
zj
at
I
ZT
= 5 mA,
f = 1 kHz
Ω
R
zj
at
I
ZT
= 1 mA,
f = 1 kHz
Test
current
I
ZT
mA
min.
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
-3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
Temperature coefficient
of Zener voltage
α
VZ
at I
ZT
10
-4
/°C
max.
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
-
-
-
-
-
-
-
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
Reverse
voltage
V
R
at
I
R
= 100 nA
V
Part number
Note
1)
Tested with pulses t = 5 ms
p
Document Number 85867
Rev. 1.1, 26-Aug-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
2
AZ23-V-G-Series
Vishay Semiconductors
Electrical Characteristics
Zener voltage range
1)
Marking
code
V
Z
at I
ZT
V
min.
AZ23B2V7-V-G
AZ23B3V0-V-G
AZ23B3V3-V-G
AZ23B3V6-V-G
AZ23B3V9-V-G
AZ23B4V3-V-G
AZ23B4V7-V-G
AZ23B5V1-V-G
AZ23B5V6-V-G
AZ23B6V2-V-G
AZ23B6V8-V-G
AZ23B7V5-V-G
AZ23B8V2-V-G
AZ23B9V1-V-G
AZ23B10-V-G
AZ23B11-V-G
AZ23B12-V-G
AZ23B13-V-G
AZ23B15-V-G
AZ23B16-V-G
AZ23B18-V-G
AZ23B20-V-G
AZ23B22-V-G
AZ23B24-V-G
AZ23B27-V-G
AZ23B30-V-G
AZ23B33-V-G
AZ23B36-V-G
AZ23B39-V-G
AZ23B43-V-G
AZ23B47-V-G
AZ23B51-V-G
D41
D42
D43
D44
D45
D46
D47
D48
D49
D50
D51
D52
D53
D54
D55
D56
D57
D58
D59
D60
D61
D62
D63
D64
D65
D66
D67
D68
D69
D70
D71
D72
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5
5.49
6.08
6.66
7.35
8.04
8.92
9.8
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50
max.
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.2
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Dynamic resistance
R
zj
at
I
ZT
= 5 mA,
f = 1 kHz
Ω
R
zj
at
I
ZT
= 1 mA,
f = 1 kHz
Test
current
I
ZT
mA
min.
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
-3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
Temperature coefficient
of Zener voltage
α
VZ
at I
ZT
10
-4
/°C
max.
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
0.5
0.5
10
10
10
10
10
10
10
12
12
12
12
-
-
-
-
-
-
-
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
Reverse
voltage
V
R
at
I
R
= 100 nA
V
Part number
Note
1)
Tested with pulses t = 5 ms
p
Document Number 85867
Rev. 1.1, 26-Aug-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
AZ23-V-G-Series
Vishay Semiconductors
Typical Characteristics
T
amb
= 25 °C, unless otherwise specified
mA
10
3
10
2
Ω
10
3
5
4
3
2
R
zth
= R
thA
x
V
Z
x
Δ
V
Z
Δ
T
j
I
F
10
1
10
-1
10
-2
T
J
= 100 °C
R
zth
10
2
T
J
= 25 °C
5
4
3
2
10
10
-3
10
-4
10
-5
0
18114
5
4
3
2
negative
positive
1
0.2
0.4
0.6
0.8
1V
1
18121
2
3
4 5
10
2
3 4 5
100
V
V
F
Figure 1. Forward characteristics
V
Z
at I
Z
= 5 mA
Figure 4. Thermal Differential Resistance vs. Zener Voltage
mW
500
Ω
100
7
5
4
400
P
tot
300
R
zj
3
2
10
200
7
5
4
100
3
2
0
0
18115
1
100
200 °C
1
18122
2
3
4 5
T
j
= 25 °C
I
Z
= 5 mA
10
2
3 4 5
100
V
T
amb
V
Z
Figure 2. Admissible Power Dissipation vs. Ambient Temperature
Figure 5. Dynamic Resistance vs. Zener Voltage
Ω
10
3
7
5
4
T
j
= 25 °C
mV/°C
25
20
15
10
5
0
-5
5 mA
I
Z
= 1 mA
20 mA
R
zj
3
2
47 + 51
43
39
36
Δ
V
Z
Δ
T
j
10
2
7
5
4
3
2
10
0.1
18120
2
3
4 5
1
2
3 4 5
I
Z
10
mA
1
18123
2
3
4 5
10
2
3 4 5
100
V
V
Z
Figure 3. Dynamic Resistance vs. Zener Current
Figure 6. Temperature Dependence of Zener Voltage vs.
Zener Voltage
Document Number 85867
Rev. 1.1, 26-Aug-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
4
AZ23-V-G-Series
Vishay Semiconductors
V
0.8
0.7
0.6
V
Z
at I
Z
= 5 mA
25
15
10
V
1.6
1.4
1.2
Δ
V
Z
= R
zth
x I
Z
Δ
V
Z
0.5
0.4
0.3
0.2
0.1
0
-1
- 0.2
0
18124
3.6
4.7
8
7
6.2
5.9
5.6
5.1
Δ
V
Z
1
0.8
0.6
0.4
0.2
0
- 0.2
- 0.4
20
40
60
80
100 120 140 C
18127
1
2
3
4 5
10
2
3 4 5
100
V
T
j
V
Z
at I
Z
= 5 mA
Figure 10. Change of Zener Voltage from Turn-on up to the Point
of Thermal Equilibrium vs. Zener Voltage
V
5
Figure 7. Change of Zener Voltage vs. Junction Temperature
mV/°C
100
I
Z
= 5 mA
Δ
V
Z
= R
zth
x I
Z
Δ
V
Z
Δ
T
j
80
4
Δ
V
Z
60
3
I
Z
= 5 mA
40
2
20
1
I
Z
= 2 mA
0
0
18125
0
20
40
60
80
100
V
0
18128
20
40
60
80
100
V
V
Z
V
Z
Figure 8. Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
9
8
7
Figure 11. Change of Zener Voltage from Turn-on up to the Point
of Thermal Equilibrium vs. Zener Voltage
mA
50
T
j
= 25 °C
2.7
3.9 5.6
3.3 4.7
6.8
8.2
40
51
43
36
Δ
V
Z
6
5
4
3
2
1
0
-1
0
18126
l
Z
30
20
Test
current
I
Z
5 mA
10
I
Z
= 2 mA
20
40
60
80
100 120
T
j
140 °C
0
0
18111
1
2
3
4
5
6
V
Z
7
8
9 10
V
Figure 9. Change of Zener Voltage vs. Junction Temperature
Figure 12. Breakdown Characteristics
Document Number 85867
Rev. 1.1, 26-Aug-09
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
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