首页 > 器件类别 > 分立半导体 > 二极管

AZ23C12-V-GS18

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

下载文档
AZ23C12-V-GS18 在线购买

供应商:

器件:AZ23C12-V-GS18

价格:-

最低购买:-

库存:点击查看

点击购买

器件参数
参数名称
属性值
是否无铅
不含铅
厂商名称
Vishay(威世)
包装说明
R-PDSO-G3
针数
3
Reach Compliance Code
unknown
ECCN代码
EAR99
配置
COMMON ANODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
ZENER DIODE
最大动态阻抗
20 Ω
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
湿度敏感等级
1
元件数量
2
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性
UNIDIRECTIONAL
最大功率耗散
0.3 W
认证状态
Not Qualified
标称参考电压
12 V
表面贴装
YES
技术
ZENER
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
10
最大电压容差
5.39%
工作测试电流
5 mA
文档预览
AZ23-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes, Dual
FEATURES
2
1
• Dual silicon planar Zener diodes, common
anode
• The Zener voltages are graded according to the
international E24 standard. Standard Zener
voltage tolerance is ± 5 %, indicated by the “C”
in the ordering code. Replace “C” with “B” for
2 % tolerance.
• The parameters are valid for both diodes in one
case.
V
Z
and
R
zj
of the two diodes in one
case is
5 %
• AEC-Q101 qualified available
UNIT
V
mA
Available
3
20456
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.7 to 51
5
Pulse current
Dual common anode
• ESD capability according to AEC-Q101:
Human body model > 8 kV
Machine model > 800 V
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
AZ23C2V7-E3-08 to AZ23C51-E3-08
AZ23B2V7-E3-08 to AZ23B51-E3-08
AZ23C2V7-HE3-08 to AZ23C51-HE3-08
AZ23-series
AZ23B2V7-HE3-08 to AZ23B51-HE3-08
AZ23C2V7-E3-18 to AZ23C51-E3-18
AZ23B2V7-E3-18 to AZ23B51-E3-18
AZ23C2V7-HE3-18 to AZ23C51-HE3-18
AZ23B2V7-HE3-18 to AZ23B51-HE3-18
10 000 (8 mm tape on 13" reel)
10 000
3000 (8 mm tape on 7" reel)
15 000
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
PACKAGE
PACKAGE NAME
SOT-23
WEIGHT
8.8 mg
MOLDING COMPOUND
FLAMMABILITY RATING
UL 94 V-0
MOISTURE SENSITIVITY
LEVEL
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Thermal resistance, junction
to ambient air
Junction temperature
Storage temperature range
Operating temperature range
TEST CONDITION
Device on fiberglass substrate,
see layout on page 6
Device on fiberglass substrate,
see layout on page 6
SYMBOL
P
tot
R
thJA
T
j
T
stg
T
op
VALUE
300
420
150
-65 to +150
-55 to +150
UNIT
mW
K/W
°C
°C
°C
Rev. 1.9. 08-Nov-16
Document Number: 85759
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AZ23-Series
www.vishay.com
Vishay Semiconductors
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
VZ
at I
ZT
10
-4
/°C
MIN.
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
-
-
-
-
-
-
-
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
-
-
-
-
-
-
-
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
MAX.
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
(1)
PART NUMBER
MARKING
CODE
MIN.
AZ23C2V7
AZ23C3V0
AZ23C3V3
AZ23C3V6
AZ23C3V9
AZ23C4V3
AZ23C4V7
AZ23C5V1
AZ23C5V6
AZ23C6V2
AZ23C6V8
AZ23C7V5
AZ23C8V2
AZ23C9V1
AZ23C10
AZ23C11
AZ23C12
AZ23C13
AZ23C15
AZ23C16
AZ23C18
AZ23C20
AZ23C22
AZ23C24
AZ23C27
AZ23C30
AZ23C33
AZ23C36
AZ23C39
AZ23C43
AZ23C47
AZ23C51
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
D11
D12
D13
D14
D15
D16
D17
D18
D19
D20
D21
D22
D23
D24
D25
D26
D27
D28
D29
D30
D31
D32
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
V
Z
at I
ZT1
V
NOM.
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
MAX.
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
TEST
CURRENT
I
ZT1
mA
I
ZT2
REVERSE
VOLTAGE
V
R
at I
R
V
nA
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
Note
(1)
Tested with pulses t = 5 ms
p
Rev. 1.9. 08-Nov-16
Document Number: 85759
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AZ23-Series
www.vishay.com
Vishay Semiconductors
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
VZ
at I
ZT
10
-4
/°C
MIN.
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
-
-
-
-
-
-
-
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
-
-
-
-
-
-
-
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
MAX.
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
0.5
0.5
10
10
10
10
10
10
10
12
12
12
12
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
(1)
PART NUMBER
MARKING
CODE
MIN.
AZ23B2V7
AZ23B3V0
AZ23B3V3
AZ23B3V6
AZ23B3V9
AZ23B4V3
AZ23B4V7
AZ23B5V1
AZ23B5V6
AZ23B6V2
AZ23B6V8
AZ23B7V5
AZ23B8V2
AZ23B9V1
AZ23B10
AZ23B11
AZ23B12
AZ23B13
AZ23B15
AZ23B16
AZ23B18
AZ23B20
AZ23B22
AZ23B24
AZ23B27
AZ23B30
AZ23B33
AZ23B36
AZ23B39
AZ23B43
AZ23B47
AZ23B51
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
D11
D12
D13
D14
D15
D16
D17
D18
D19
D20
D21
D22
D23
D24
D25
D26
D27
D28
D29
D30
D31
D32
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5
5.49
6.08
6.66
7.35
8.04
8.92
9.8
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50
V
Z
at I
ZT1
V
NOM.
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
MAX.
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.2
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52
TEST
CURRENT
I
ZT1
mA
I
ZT2
REVERSE
VOLTAGE
V
R
at I
R
V
nA
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
Note
(1)
Tested with pulses t = 5 ms
p
Rev. 1.9. 08-Nov-16
Document Number: 85759
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AZ23-Series
www.vishay.com
TYPICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
mA
10
3
10
2
Ω
10
3
5
4
3
2
Vishay Semiconductors
R
zth
= R
thA
x
V
Z
x
Δ
V
Z
Δ
T
j
I
F
10
1
10
-1
10
-2
T
J
= 100 °C
R
zth
10
2
T
J
= 25 °C
5
4
3
2
10
10
-3
10
-4
10
-5
0
18114
5
4
3
2
negative
positive
1
0.2
0.4
0.6
0.8
1V
1
18121
2
3
4 5
10
2
3 4 5
100
V
V
F
Fig. 1 -
Forward Characteristics
V
Z
at I
Z
= 5 mA
Fig. 4 -
Thermal Differential Resistance
vs.
Zener Voltage
Ω
100
7
5
4
mW
500
400
P
tot
300
R
zj
3
2
10
200
7
5
4
100
3
2
0
0
18115
1
100
200 °C
1
18122
2
3
4 5
T
j
= 25 °C
I
Z
= 5 mA
10
2
3 4 5
100
V
T
amb
V
Z
Fig. 2 -
Admissible Power Dissipation
vs.
Ambient Temperature
Fig. 5 -
Dynamic Resistance
vs.
Zener Voltage
mV/°C
25
Ω
10
3
7
5
4
T
j
= 25 °C
R
zj
3
2
47 + 51
43
39
36
Δ
V
Z
Δ
T
j
20
15
10
5
0
-5
5 mA
I
Z
= 1 mA
20 mA
10
2
7
5
4
3
2
10
0.1
18120
2
3
4 5
1
2
3 4 5
I
Z
10
mA
1
18123
2
3
4 5
10
2
3 4 5
100
V
V
Z
Fig. 3 -
Dynamic Resistance
vs.
Zener Current
Fig. 6 -
Temperature Dependence of Zener Voltage
vs.
Zener Voltage
Rev. 1.9. 08-Nov-16
Document Number: 85759
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AZ23-Series
www.vishay.com
Vishay Semiconductors
V
1.6
15
10
V
0.8
0.7
0.6
V
Z
at I
Z
= 5 mA
25
1.4
1.2
Δ
V
Z
= R
zth
x I
Z
Δ
V
Z
0.5
0.4
0.3
0.2
0.1
0
-1
- 0.2
0
18124
3.6
4.7
8
7
6.2
5.9
5.6
5.1
Δ
V
Z
1
0.8
0.6
0.4
0.2
0
- 0.2
- 0.4
20
40
60
80
100 120 140 C
18127
1
2
3
4 5
10
2
3 4 5
100
V
T
j
V
Z
at I
Z
= 5 mA
Fig. 10 -
Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium
vs.
Zener Voltage
Fig. 7 -
Change of Zener Voltage
vs.
Junction Temperature
mV/°C
100
I
Z
= 5 mA
V
5
Δ
V
Z
= R
zth
x I
Z
Δ
V
Z
Δ
T
j
80
4
Δ
V
Z
60
3
I
Z
= 5 mA
40
2
20
1
I
Z
= 2 mA
0
0
18125
0
20
40
60
80
100
V
0
18128
20
40
60
80
100
V
V
Z
V
Z
Fig. 8 -
Temperature Dependence of Zener Voltage
vs.
Zener Voltage
Fig. 11 -
Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium
vs.
Zener Voltage
mA
50
V
9
8
7
T
j
= 25 °C
2.7
3.9 5.6
3.3 4.7
6.8
8.2
40
51
43
36
Δ
V
Z
6
5
4
3
2
1
0
-1
0
18126
l
Z
30
20
Test
current
I
Z
5 mA
10
I
Z
= 2 mA
20
40
60
80 100 120
T
j
140 °C
0
0
18111
1
2
3
4
5
6
V
Z
7
8
9 10
V
Fig. 9 -
Change of Zener Voltage
vs.
Junction Temperature
Fig. 12 -
Breakdown Characteristics
Rev. 1.9. 08-Nov-16
Document Number: 85759
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
查看更多>
热门器件
热门资源推荐
器件捷径:
E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
需要登录后才可以下载。
登录取消