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AZ23C3V6-V

3.6 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

器件类别:分立半导体    二极管   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Vishay(威世)
包装说明
R-PDSO-G3
针数
3
Reach Compliance Code
unknow
ECCN代码
EAR99
配置
COMMON ANODE, 2 ELEMENTS
二极管元件材料
SILICON
二极管类型
ZENER DIODE
最大动态阻抗
80 Ω
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
湿度敏感等级
1
元件数量
2
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性
UNIDIRECTIONAL
最大功率耗散
0.3 W
认证状态
Not Qualified
标称参考电压
3.6 V
表面贴装
YES
技术
ZENER
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
40
最大电压容差
5.56%
工作测试电流
5 mA
文档预览
AZ23-V-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes, Dual
FEATURES
3
• These diodes are also available in other case
styles and configurations including: the dual
diode common cathode configuration with type
designation DZ23, the single diode SOT-23
case with the type designation BZX84C, and the
single diode SOD-123 case with the type
designation BZT52C
• Dual silicon planar Zener diodes, common anode
1
2
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.7 to 51
5
Pulse current
Dual
UNIT
V
mA
• The Zener voltages are graded according to the
international E 24 standard
• The parameters are valid for both diodes in one case.
ΔV
Z
and
Δr
zj
of the two diodes in one case is
5 %
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
ORDERING INFORMATION
DEVICE NAME
AZ23-V-series
AZ23-V-series
ORDERING CODE
AZ23-V-series-GS18
AZ23-V-series-GS08
TAPED UNITS PER REEL
10 000 (8 mm tape on 13" reel)
3000 (8 mm tape on 7" reel)
MINIMUM ORDER QUANTITY
10 000
15 000
PACKAGE
PACKAGE NAME
SOT-23
WEIGHT
8.8 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Power dissipation
Junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
Device on fiberglass substrate,
see layout on page 6
Device on fiberglass substrate,
see layout on page 6
SYMBOL
P
tot
R
thJA
T
j
T
stg
VALUE
300
420
150
- 65 to + 150
UNIT
mW
K/W
°C
°C
Rev. 1.7, 22-Nov-11
Document Number: 85759
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AZ23-V-Series
www.vishay.com
Vishay Semiconductors
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
α
VZ
at I
ZT
10
-4
/°C
MAX.
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
MIN.
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
-3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
MAX.
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
(1)
PART NUMBER
MARKING
CODE
MIN.
AZ23C2V7-V
AZ23C3V0-V
AZ23C3V3-V
AZ23C3V6-V
AZ23C3V9-v
AZ23C4V3-V
AZ23C4V7-V
AZ23C5V1-V
AZ23C5V6-V
AZ23C6V2-V
AZ23C6V8-V
AZ23C7V5-V
AZ23C8V2-V
AZ23C9V1-V
AZ23C10-V
AZ23C11-V
AZ23C12-V
AZ23C13-V
AZ23C15-V
AZ23C16-V
AZ23C18-V
AZ23C20-V
AZ23C22-V
AZ23C24-V
AZ23C27-V
AZ23C30-V
AZ23C33-V
AZ23C36-V
AZ23C39-V
AZ23C43-V
AZ23C47-V
AZ23C51-V
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
D11
D12
D13
D14
D15
D16
D17
D18
D19
D20
D21
D22
D23
D24
D25
D26
D27
D28
D29
D30
D31
D32
2.5
2.8
3.1
3.4
3.7
4
4.4
4.8
5.2
5.8
6.4
7
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
V
Z
at I
ZT1
V
NOM.
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
MAX.
2.9
3.2
3.5
3.8
4.1
4.6
5
5.4
6
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
TEST
CURRENT
I
ZT1
mA
I
ZT2
REVERSE
VOLTAGE
V
R
at I
R
V
MAX.
-
-
-
-
-
-
-
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
-
-
-
-
-
-
-
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
nA
MAX.
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
Ω
Note
(1)
Tested with pulses t = 5 ms
p
Rev. 1.7, 22-Nov-11
Document Number: 85759
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AZ23-V-Series
www.vishay.com
Vishay Semiconductors
TEMPERATURE
COEFFICIENT OF
ZENER VOLTAGE
α
VZ
at I
ZT
10
-4
/°C
MAX.
< 500
< 500
< 500
< 500
< 500
< 500
< 500
< 480
< 400
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 250
< 250
< 250
< 250
< 300
< 700
< 750
< 750
MIN.
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
-3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
MAX.
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
0.5
0.5
10
10
10
10
10
10
10
12
12
12
12
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
(1)
PART NUMBER
MARKING
CODE
MIN.
AZ23B2V7-V
AZ23B3V0-V
AZ23B3V3-V
AZ23B3V6-V
AZ23B3V9-V
AZ23B4V3-V
AZ23B4V7-V
AZ23B5V1-V
AZ23B5V6-V
AZ23B6V2-V
AZ23B6V8-V
AZ23B7V5-V
AZ23B8V2-V
AZ23B9V1-V
AZ23B10-V
AZ23B11-V
AZ23B12-V
AZ23B13-V
AZ23B15-V
AZ23B16-V
AZ23B18-V
AZ23B20-V
AZ23B22-V
AZ23B24-V
AZ23B27-V
AZ23B30-V
AZ23B33-V
AZ23B36-V
AZ23B39-V
AZ23B43-V
AZ23B47-V
AZ23B51-V
D1
D2
D3
D4
D5
D6
D7
D8
D9
D10
D11
D12
D13
D14
D15
D16
D17
D18
D19
D20
D21
D22
D23
D24
D25
D26
D27
D28
D29
D30
D31
D32
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5
5.49
6.08
6.66
7.35
8.04
8.92
9.8
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50
V
Z
at I
ZT1
V
NOM.
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
MAX.
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.2
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
TEST
CURRENT
I
ZT1
mA
I
ZT2
REVERSE
VOLTAGE
V
R
at I
R
V
MAX.
-
-
-
-
-
-
-
> 0.8
>1
>2
>3
>5
>6
>7
> 7.5
> 8.5
>9
> 10
> 11
> 12
> 14
> 15
> 17
> 18
> 20
> 22.5
> 25
> 27
> 29
> 32
> 35
> 38
-
-
-
-
-
-
-
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
nA
MAX.
75 (< 83)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
80 (< 95)
70 (< 78)
30 (< 60)
10 (< 40)
4.8 (< 10)
4.5 (< 8)
4 (< 7)
4.5 (< 7)
4.8 (< 10)
5.2 (< 15)
6 (< 20)
7 (< 20)
9 (< 25)
11 (< 30)
13 (< 40)
18 (< 50)
20 (< 50)
25 (< 55)
28 (< 80)
30 (< 80)
35 (< 80)
40 (< 80)
40 (< 90)
50 (< 90)
60 (< 100)
70 (< 100)
70 (< 100)
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
Ω
Note
(1)
Tested with pulses t = 5 ms
p
Rev. 1.7, 22-Nov-11
Document Number: 85759
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AZ23-V-Series
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
mA
10
3
10
2
Vishay Semiconductors
K/W
10
3
5
4
3
2
R
zth
= R
thA
x
V
Z
x
Δ
V
Z
Δ
T
j
I
F
10
1
10
-1
10
-2
T
J
= 100 °C
R
zth
10
2
5
4
3
2
T
J
= 25 °C
10
10
-3
10
-4
10
-5
0
18114
5
4
3
2
negative
positive
1
0.2
0.4
0.6
0.8
1V
1
18121
2
3
4 5
10
2
3 4 5
100
V
V
F
Fig. 1 -
Forward Characteristics
V
Z
at I
Z
= 5 mA
Fig. 4 -
Thermal Differential Resistance vs. Zener Voltage
Ω
100
7
5
4
mW
500
400
P
tot
300
R
zj
3
2
10
200
7
5
4
100
3
2
0
0
18115
1
100
200 °C
1
18122
2
3
4 5
T
j
= 25 °C
I
Z
= 5 mA
10
2
3 4 5
100
V
T
amb
V
Z
Fig. 2 -
Admissible Power Dissipation vs. Ambient Temperature
Fig. 5 -
Dynamic Resistance vs. Zener Voltage
mV/°C
25
20
15
10
5
0
-5
5 mA
I
Z
= 1 mA
20 mA
Ω
10
3
7
5
4
T
j
= 25 °C
R
zj
3
2
47 + 51
43
39
36
Δ
V
Z
Δ
T
j
10
2
7
5
4
3
2
10
0.1
18120
2
3
4 5
1
2
3 4 5
I
Z
10
mA
1
18123
2
3
4 5
10
2
3 4 5
100
V
V
Z
Fig. 3 -
Dynamic Resistance vs. Zener Current
Fig. 6 -
Temperature Dependence of Zener Voltage vs.
Zener Voltage
Rev. 1.7, 22-Nov-11
Document Number: 85759
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
AZ23-V-Series
www.vishay.com
Vishay Semiconductors
V
1.6
15
10
V
0.8
0.7
0.6
V
Z
at I
Z
= 5 mA
25
1.4
1.2
Δ
V
Z
= R
zth
x I
Z
Δ
V
Z
0.5
0.4
0.3
0.2
0.1
0
-1
- 0.2
0
18124
3.6
4.7
8
7
6.2
5.9
5.6
5.1
Δ
V
Z
1
0.8
0.6
0.4
0.2
0
- 0.2
- 0.4
20
40
60
80
100 120 140 C
18127
1
2
3
4 5
10
2
3 4 5
100
V
T
j
V
Z
at I
Z
= 5 mA
Fig. 10 -
Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Fig. 7 -
Change of Zener Voltage vs. Junction Temperature
mV/°C
100
I
Z
= 5 mA
V
5
Δ
V
Z
= R
zth
x I
Z
Δ
V
Z
Δ
T
j
80
4
Δ
V
Z
60
3
I
Z
= 5 mA
40
2
20
1
I
Z
= 2 mA
0
0
18125
0
20
40
60
80
100
V
0
18128
20
40
60
80
100
V
V
Z
V
Z
Fig. 8 -
Temperature Dependence of Zener Voltage vs.
Zener Voltage
Fig. 11 -
Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
mA
50
V
9
8
7
T
j
= 25 °C
2.7
3.9 5.6
3.3 4.7
6.8
8.2
40
51
43
36
Δ
V
Z
6
5
4
3
2
1
0
-1
0
18126
l
Z
30
20
Test
current
I
Z
5 mA
10
I
Z
= 2 mA
20
40
60
80 100 120
T
j
140 °C
0
0
18111
1
2
3
4
5
6
V
Z
7
8
9 10
V
Fig. 9 -
Change of Zener Voltage vs. Junction Temperature
Fig. 12 -
Breakdown Characteristics
Rev. 1.7, 22-Nov-11
Document Number: 85759
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ
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