PRELIMINARY
Am29LV160B
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
s
Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read
and write operations and for compatibility with
high performance 3.3 volt microprocessors
s
Manufactured on 0.35 µm process technology
s
Supports Common Flash Memory Interface
(CFI)
s
High performance
— Full voltage range: access times as fast as 90 ns
— Regulated voltage range: access times as fast
as 80 ns
s
Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 9 mA read current
— 20 mA program/erase current
s
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
thirty-one 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
thirty-one 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
s
Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
s
Top or bottom boot block configurations
available
s
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
s
Minimum 1,000,000 write cycle guarantee per
sector
s
Package option
— 48-ball FBGA
— 48-pin TSOP
— 44-pin SO
s
CFI (Common Flash Interface) compliant
— Provides device-specific information to the
system, allowing host software to easily
reconfigure for different Flash devices
s
Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
s
Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
s
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion (not
available on 44-pin SO)
s
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
s
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
Publication#
21358
Rev:
F
Amendment/+2
Issue Date:
March 1998
PRELIMINARY
GENERAL DESCRIPTION
The Am29LV160B is a 16 Mbit, 3.0 Volt-only Flash memory
organized as 2,097,152 bytes or 1,048,576 words. The
device is offered in 48-ball FBGA, 44-pin SO, and 48-pin
TSOP packages. The word-wide data (x16) appears on
DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0.
This device is designed to be programmed in-system with
the standard system 3.0 volt V
CC
supply. A 12.0 V V
PP
or 5.0
V
CC
are not required for write or erase operations. The
device can also be program med in standard
EPROM programmers.
The device offers access times of 80, 90, and 120 ns,
allowing high speed microprocessors to operate
without wait states. To eliminate bus contention the
device has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.
The device requires only a
single 3.0 volt power sup-
ply
for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations.
The Am29LV160B is entirely command set compatible
w it h t h e
J E D E C s in g le - p ow e r-s u p p ly F la s h
standard.
Commands are written to the command reg-
ister using standard microprocessor write timings. Reg-
ister contents serve as input to an internal state-
machine that controls the erase and programming cir-
cuitry. Write cycles also internally latch addresses and
data needed for the programming and erase opera-
tions. Reading data out of the device is similar to
reading from other Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the
Embedded
Program
algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin. The
Unlock Bypass
mode facili-
tates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the
Embedded Erase
algorithm—an internal algorithm that automatically pre-
programs the array (if it is not already programmed) be-
fore executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle)
status bits.
After a program or erase cycle
has been completed, the device is ready to read array
data or accept another command.
The
sector erase architecture
allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low V
CC
detector that automatically inhibits write operations dur-
ing power transitions. The
hardware sector protection
feature disables both program and erase operations in
any combination of the sectors of memory. This can be
achieved in-system or via programming equipment.
The
Erase Suspend/Erase Resume
feature enables
the user to put erase on hold for any period of time to
read data from, or program data to, any sector that is
not selected for erasure. True background erase can
thus be achieved.
The
hardware RESET# pin
terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the
automatic sleep mode.
The system can also place the device into the
standby
mode.
Power consumption is greatly reduced in both
these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness.
The device electrically erases all bits within a sector
simultaneously via Fowler-Nordheim tunneling. The
data is programmed using hot electron injection.
2
Am29LV160B
PRELIMINARY
PRODUCT SELECTOR GUIDE
Family Part Number
Speed Option
Regulated Voltage Range: V
CC
=3.0–3.6 V
Full Voltage Range: V
CC
= 2.7–3.6 V
Max access time, ns (t
ACC
)
Max CE# access time, ns (t
CE
)
Max OE# access time, ns (t
OE
)
80
80
30
80R
90
90
90
35
120
120
120
50
Am29LV160B
Note:
See “AC Characteristics” for full specifications.
BLOCK DIAGRAM
RY/BY#
V
CC
V
SS
RESET#
Erase Voltage
Generator
Input/Output
Buffers
Sector Switches
DQ0
–
DQ15 (A-1)
WE#
BYTE#
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
STB
Data
Latch
CE#
OE#
STB
V
CC
Detector
Timer
Address Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
A0–A19
21358F-1
Am29LV160B
3
PRELIMINARY
CONNECTION DIAGRAMS
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE#
RESET#
NC
NC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Standard TSOP
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
V
SS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
V
SS
CE#
A0
A16
BYTE#
V
SS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
V
SS
CE#
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Reverse TSOP
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE#
RESET#
NC
NC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
21358F-2
4
Am29LV160B
PRELIMINARY
CONNECTION DIAGRAMS
RESET#
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE#
V
SS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
WE#
A19
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE#
V
SS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
CC
21358F-3
SO
FBGA
Bottom View
A1
A3
A2
A7
A3
RY/BY#
A4
WE#
A5
A9
A6
A13
B1
A4
B2
A17
B3
NC
B4
RESET#
B5
A8
B6
A12
C1
A2
C2
A6
C3
A18
C4
NC
C5
A10
C6
A14
D1
A1
D2
A5
D3
NC
D4
A19
D5
A11
D6
A15
E1
A0
E2
DQ0
E3
DQ2
E4
DQ5
E5
DQ7
E6
A16
F1
CE#
F2
DQ8
F3
DQ10
F4
DQ12
F5
DQ14
F6
G1
OE#
G2
DQ9
G3
DQ11
G4
V
CC
G5
DQ13
G6
H1
V
SS
H2
DQ1
H3
DQ3
H4
DQ4
H5
DQ6
H6
V
SS
BYTE# DQ15/A-1
21358F-1
Special Handling Instructions
Special handling is required for Flash Memory products
in FBGA packages.
Flash memory devices in FBGA packages may be
damaged if exposed to ultrasonic cleaning methods.
The package and/or data integrity may be compromised
if the package body is exposed to temperatures above
150°C for prolonged periods of time.
Am29LV160B
5
