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B125-C1000

SILICON BRIDGE RECTIFIERS

器件类别:分立半导体    二极管   

厂商名称:EIC [EIC discrete Semiconductors]

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
EIC [EIC discrete Semiconductors]
Reach Compliance Code
compli
ECCN代码
EAR99
配置
BRIDGE, 4 ELEMENTS
二极管类型
BRIDGE RECTIFIER DIODE
最大正向电压 (VF)
1.1 V
最大非重复峰值正向电流
40 A
元件数量
4
最高工作温度
150 °C
最大输出电流
1 A
最大重复峰值反向电压
250 V
表面贴装
NO
文档预览
B40-B380/C1000
PRV : 100 - 900 Volts
Io : 1.0 Amperes
FEATURES :
*
*
*
*
*
*
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
SILICON BRIDGE RECTIFIERS
WOB
0.39 (10.0)
0.31 (7.87)
0.22 (5.59)
0.18 (4.57)
+
AC
-
1.00 (25.4)
MIN.
1.10 (27.9)
MIN.
0.034 (0.86)
0.028 (0.71)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
AC
+
-
AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Input Voltage R+C -Load
Maximum DC Blocking Voltage
Maximum Average Forward Current For
Free Air Operation at Tc = 45
°
C R+L -Load
C -Load
Peak Forward Surge Current Single half sine wave
on rated load (JEDEC Method) at T
J
= 125
°
C
Rating for fusing at T
J
= 125
°
C ( t < 100 ms.)
Maximum Series Resistor C-Load V
RMS
=
±
10%
Maximum load Capacitance
+ 50%
-10%
Maximum Forward Voltage per Diode at I
F
= 1.0 Amp.
Maximum Reverse Current at Rated Repetitive
Peak Voltage per Diode
Ta = 25
°
C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
B40-
C1000
100
40
100
B80-
C1000
200
80
200
B125-
C1000
300
125
300
1.2
1.0
B250-
C1000
600
250
600
B380-
C1000
900
380
900
UNIT
Volts
Volts
Volts
Amps.
I
FSM
I
t
R
t
C
L
V
F
I
R
R
θ
JA
T
J
T
STG
2
40
10
1.0
5000
2.0
2500
4.0
1000
1.0
10
36
- 50 to + 125
- 50 to + 125
8.0
500
12.0
200
Amps.
AS
µF
Volts
2
µ
A
°
C/W
°
C
°
C
Notes :
1 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm)
copper Pads.
UPDATE : AUGUST 26,1998
RATING AND CHARACTERISTIC CURVES ( B40-B380/C1000 )
FIG.1 - DERATING CURVE
FOR OUTPUT RECTIFIED CURRENT
B40 C1000 - B125 C1000
1.2
1.2
FIG.2 - DERATING CURVE
FOR OUTPUT RECTIFIED CURRENT
B250 C1000 - B380 C1000
BRIDGE OUTPUT
FULL WAVE RECTIFIED CURRENT
AVERAGE AMPERES
Resistive or
Inductive load.
Capacitive
BRIDGE OUTPUT
FULL WAVE RECTIFIED CURRENT
AVERAGE AMPERES
1.0
Capacitive Load
Resistive or
Inductive load.
1.0
0.8
0.6
0.4
0-10µF
10-100µF
=100µF
0.8
0-10µF
10-100µF
0.6
0.4
=100µF
PC Board
0.375(9.5mm)
PC Board
0.375(9.5mm)
0.2
0
Copper Pads
0.22" x 0.22" (5.5mm x 5.5mm)
0.2
Copper Pads
0.22" x 0.22" (5.5mm x 5.5mm)
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
CASE TEMPERATURE, (
°
C)
CASE TEMPERATURE, (
°
C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
20
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
FORWARD CURRENT, AMPERES
10
10
T
J
= 100
°
C
1
1.0
0.1
T
J
= 25
°
C
Pulse Width = 300
µ
s
1 % Duty Cycle
0.1
T
J
= 25
°
C
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.01
0
20
40
60
80
100
120
140
FORWARD VOLTAGE, VOLTS
PERCENT OF RATED REVERSE
VOLTAGE, (%)
FIG.6 - TYPICAL JUNCTION CAPACITANCE
PER BRIDGE ELEMENT
100
FIG.5 - MAXIMUM NON-REPETITIVE
PEAK FORWARD CURRENT
40
PEAK FORWARD
CURRENT, AMPERES
CAPACITANCE, pF
60
40
20
10
6
4
2
30
T
J
= 25
°
C
20
10
f = 1MHz
Vsig = 50mVp-p
0
1
2
4
6
10
20
40 60 100
1
0.1 0.2
0.6 1
2
4 6
10
20 40
100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE, VOLTS
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参数对比
与B125-C1000相近的元器件有:B250-C1000、B380-C1000、B40-C1000、B80-C1000。描述及对比如下:
型号 B125-C1000 B250-C1000 B380-C1000 B40-C1000 B80-C1000
描述 SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS SILICON BRIDGE RECTIFIERS
是否无铅 不含铅 - 不含铅 不含铅 不含铅
是否Rohs认证 符合 - 符合 符合 符合
厂商名称 EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compli - compli compli compli
ECCN代码 EAR99 - EAR99 EAR99 EAR99
配置 BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管类型 BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
最大正向电压 (VF) 1.1 V - 1.1 V 1.1 V 1.1 V
最大非重复峰值正向电流 40 A - 40 A 40 A 40 A
元件数量 4 - 4 4 4
最高工作温度 150 °C - 150 °C 150 °C 150 °C
最大输出电流 1 A - 1 A 1 A 1 A
最大重复峰值反向电压 250 V - 800 V 80 V 160 V
表面贴装 NO - NO NO NO
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