B5817W
THRU
B5819W
Technical Data
Data Sheet N1752, Rev.A
B5817W THRU B5819W
SCHOTTKY BARRIER DIODE
Features
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications.
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon
request
SOD-123
Circuit Diagram
Mechanical Data
Case: SOD-123, Molded Plastic
Terminals: Plated Leads Solderable per MIL-STD-202,
Method 208
Polarity: Cathode Band
Weight: 0.01 grams(approx)
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Parameter
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
Non-repetitive Peak Forward
Surge Current @t=8.3ms
Repetitive Peak Forward Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
I
FRM
P
D
R
ΘJA
T
j
T
stg
14
21
1
9
1.5
500
200
125
-55~+150
28
V
A
A
A
mW
°C/W
°C
°C
B5817W
20
20
B5818W
30
30
B5819W
40
40
Units
V
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B5817W
THRU
B5819W
Technical Data
Data Sheet N1752, Rev.A
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Parameter
Reverse breakdown voltage*
Symbol
V
(BR)
Test conditions
I
R
=1mA
B5817W
B5818W
B5819W
B5817W
B5818W
B5819W
I
F
=1A
I
F
=3A
I
F
=1A
I
F
=3A
I
F
=1A
I
F
=3A
Min
20
30
40
-
-
-
-
-
Max
-
-
-
1
0.45
0.75
0.55
0.875
0.60
0.90
120
pF
V
Units
V
Reverse voltage leakage current*
Forward voltage*
I
R
V
F
V
R
=20V
V
R
=30V
V
R
=40V
B5817W
B5818W
B5819W
mA
Diode capacitance
* Pulse width < 300 µs, duty cycle < 2%
C
D
V
R
=4V, f=1MHz
Mechanical Dimensions SOD-123
Millimeters
MIN.
1.050
0.000
1.050
0.450
0.080
MAX.
1.250
0.100
1.150
0.650
0.150
Inches
MIN.
0.041
1
0.000
0.041
0.018
0.003
MAX.
0.049
0.004
0.045
0.026
0.006
SYMBOL
A
A1
A2
b
c
D
E
E1
L
L1
θ
1.500
1.700
2.600
2.800
3.550
3.850
0.500 REF.
0.250
0.450
0°
8°
0.059
0.067
0.102
0.110
0.140
0.152
0.020 REF.
0.010
0.018
0°
8°
Ordering Information
Device
B5817W THRU B5819W
Package
SOD-123 (Pb-Free)
Shipping
3000pcs / reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging
specification.
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B5817W
THRU
B5819W
Technical Data
Data Sheet N1752, Rev.A
Ratings and Characteristics Curves
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B5817W
THRU
B5819W
Technical Data
Data Sheet N1752, Rev.A
Carrier Tape Specification SOD-123
SYMBOL
A
B
C
d
E
F
P
P0
P1
W
Millimeters
Min.
Max.
1.80
3.89
1.52
1.45
1.65
3.40
3.90
3.90
1.90
7.90
1.90
3.99
1.62
1.65
1.85
3.60
4.10
4.10
2.10
8.30
Marking Diagram
B5817W:SJ
B5818W:SK
B5819W:SL
The marking bar indicates the cathode
Solid dot = Green molding compound device, if none, the normal device.
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B5817W
THRU
B5819W
Technical Data
Data Sheet N1752, Rev.A
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales
department for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd
assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information,
products or circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC
- Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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