BA592/BA892...
Silicon RF Switching Diode
•
For band switching in TV/VTR tuners
and mobile applications
•
Very low forward resistance (typ. 0.45
Ω
@ 3 mA)
•
Small capacitance
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
BA592
BA892/-02L
BA892-02V
Type
BA592
BA892
BA892-02L
BA892-02V
Package
SOD323
SCD80
TSLP-2-1
SC79
Configuration
single
single
single, leadless
single
L
S
(nH)
1.8
0.6
0.4
0.6
Marking
blue S
AA
AA
A
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Junction temperature
Operating temperature range
Storage temperature
Symbol
V
R
I
F
T
J
T
op
T
Stg
Value
35
100
150
-55 ... 125
-55 ... 150
Unit
V
mA
°C
1
2011-07-21
BA592/BA892...
Thermal Resistance
Parameter
Symbol
R
thJS
≤
135
≤
120
≤
70
Value
Unit
Junction - soldering point
1)
BA592
BA892, BA892-02V
BA892-02L
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
typ.
max.
Unit
Reverse current
V
R
= 20 V
Forward voltage
I
F
= 100 mA
1
For
I
R
V
F
-
-
-
-
20
1
nA
V
calculation of
R
thJA
please refer to Application Note Thermal Resistance
2
2011-07-21
BA592/BA892...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
AC Characteristics
Symbol
min.
Values
typ.
max.
Unit
Diode capacitance
V
R
= 1 V,
f
= 1 MHz
V
R
= 3 V,
f
= 1 MHz
V
R
= 0 V,
f
= 100 MHz
Reverse parallel resistance
V
R
= 0 V,
f
= 100 MHz
Forward resistance
I
F
= 3 mA,
f
= 100 MHz
I
F
= 10 mA,
f
= 100 MHz
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA, measured at
I
R
= 3mA,
R
L
= 100
Ω
I-region width
Insertion loss
1)
I
F
= 0.1 mA,
f
= 1.8 GHz
I
F
= 3 mA,
f
= 1.8 GHz
I
F
= 10 mA,
f
= 1.8 GHz
Isolation
1)
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 470 MHz
V
R
= 0 V,
f
= 1 GHz
1
BA892-02L
C
T
0.65
0.6
-
R
P
r
f
-
-
τ
rr
pF
0.92
0.85
1
100
1.4
1.1
-
-
k
Ω
Ω
-
0.45
0.36
120
0.7
0.5
-
ns
-
W
I
I
L
-
-
-
-
3
0.1
0.5
0.4
23.5
10.5
5.5
-
-
-
-
-
-
-
µm
dB
I
SO
-
-
-
in series configuration,
Z
= 50Ω
3
2011-07-21
BA592/BA892...
Diode capacitance
C
T
=
ƒ
(V
R
)
Reverse parallel resistance
R
P
=
ƒ
(V
R
)
f
= Parameter
2
f
= Parameter
10
3
KOhm
100 MHz
pF
10
2
C
T
1.2
R
p
10
1
1 GHz
0.8
1 MHz ... 1 GHz
10
0
0.4
0
0
5
10
15
20
V
30
10
-1
0
5
10
15
20
V
30
V
R
V
R
Forward resistance
r
f
=
ƒ
(I
F
)
Forward current
I
F
=
ƒ
(V
F
)
f
= 100MHz
10
2
T
A
= Parameter
10
0
A
10
-1
Ohm
10
1
10
-2
I
F
10
-3
r
f
10
0
10
-4
-40 °C
25 °C
85 °C
125 °C
10
-5
10
-1 -2
10
10
-1
10
0
10
1
mA
10
2
10
-6
0
0.2
0.4
0.6
0.8
V
1.2
I
F
V
F
4
2011-07-21
BA592/BA892...
Insertion loss
I
L
= -|S
21
|
2
=
ƒ
(f)
Isolation
I
SO
= -|S
21
|
2
=
ƒ
(f)
I
F
= Parameter
BA892-02L in series configuration,
Z
= 50Ω
0
V
R
= Paramter
BA892-02L in series configuration,
Z
= 50Ω
0
dB
dB
|S
21
|
2
|S
21
|
2
-10
-0.2
10 mA
3 mA
1 mA
0.1 mA
0V
1V
10 V
-15
-20
-0.3
-25
-0.4
0
0.5
1
1.5
2
GHz
3
-30
0
0.5
1
1.5
2
GHz
3
f
f
5
2011-07-21
医疗电子
