DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAL99
High-speed diode
Product data sheet
Supersedes data of 1999 May 26
2003 Dec 12
NXP Semiconductors
Product data sheet
High-speed diode
FEATURES
•
Small plastic SMD package
•
High switching speed: max. 4 ns
•
Continuous reverse voltage: max. 70 V
•
Repetitive peak reverse voltage: max. 70 V
•
Repetitive peak forward current: max. 500 mA.
APPLICATIONS
•
High-speed switching in e.g. surface mounted circuits.
2
BAL99
PINNING
PIN
1
2
3
DESCRIPTION
not connected
cathode
anode
handbook, halfpage
2
1
1
n.c.
3
3
MAM231
DESCRIPTION
The BAL99 is a high-speed switching diode fabricated in
planar technology, and encapsulated in the small SOT23
plastic SMD package.
Marking code:
JFp = made in Hong Kong;
JFt = made in Malaysia;
JFW = made in China.
Fig.1
Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BAL99
−
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
RRM
V
R
I
F
I
FRM
I
FSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to surge;
see Fig.4
t
p
= 1
µs
t
p
= 1 ms
t
p
= 1 s
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
4
1
0.5
250
+150
150
A
A
A
mW
°C
°C
see Fig.2; note 1
CONDITIONS
MIN.
−
−
−
−
MAX.
70
70
215
500
UNIT
V
V
mA
mA
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Dec 12
2
NXP Semiconductors
Product data sheet
High-speed diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
see Fig.5
V
R
= 25 V
V
R
= 70 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 70 V; T
j
= 150
°C;
C
d
t
rr
V
fr
diode capacitance
reverse recovery time
forward recovery voltage
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 10 mA to I
R
= 10 mA;
R
L
= 100
Ω;
measured at I
R
= 1 mA; see Fig.7
CONDITIONS
BAL99
MAX.
715
855
1
1.25
30
1
30
50
1.5
4
UNIT
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V
when switched from I
F
= 10 mA; t
r
= 20 ns; see Fig.8 1.75
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-tp)
R
th(j-a)
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
360
500
UNIT
K/W
K/W
2003 Dec 12
3
NXP Semiconductors
Product data sheet
High-speed diode
GRAPHICAL DATA
BAL99
handbook, halfpage
300
MLB755
handbook, halfpage
300
IF
MBG382
IF
(mA)
200
(mA)
(1)
(2)
(3)
200
100
100
0
0
100
T amb ( C)
o
0
200
0
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.2
Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3
Forward current as a function of forward
voltage.
handbook, full pagewidth
10
2
MBG704
IFSM
(A)
10
1
10
−1
1
10
10
2
10
3
tp (µs)
10
4
Based on square wave currents; T
j
= 25
°C
prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Dec 12
4
NXP Semiconductors
Product data sheet
High-speed diode
BAL99
10
5
I
R
(nA)
10
4
mbh182
handbook, halfpage
0.8
MBG446
Cd
(pF)
0.6
10
3
(1)
(2)
(3)
0.4
10
2
0.2
10
0
100
0
T
j
(°C)
200
0
4
8
12
VR (V)
16
(1) V
R
= 70 V; maximum values.
(2) V
R
= 70 V; typical values.
(3) V
R
= 25 V; typical values.
f = 1 MHz; T
j
= 25
°C.
Fig.5
Reverse current as a function of junction
temperature.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
2003 Dec 12
5
