DISCRETE SEMICONDUCTORS
DATA SHEET
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M3D102
BAP51-05W
General purpose PIN diode
Product specification
Supersedes data of 1999 Jul 01
2001 Jan 23
NXP Semiconductors
Product specification
General purpose PIN diode
FEATURES
Two elements in common cathode configuration in a
small SMD plastic package
Low diode capacitance
Low diode forward resistance.
APPLICATIONS
General RF applications.
DESCRIPTION
Two planar PIN diodes in common cathode configuration
in a SOT323 small SMD plastic package.
1
Top view
2
handbook, halfpage
BAP51-05W
PINNING
PIN
1
2
3
DESCRIPTION
anode (a1)
anode (a2)
common cathode
3
3
1
2
MAM382
Marking code:
1W-
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
½
90
C
65
65
50
50
240
+150
+150
V
mA
mW
C
C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
2001 Jan 23
2
NXP Semiconductors
Product specification
General purpose PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
C
unless otherwise specified.
SYMBOL
Per diode
V
F
V
R
I
R
C
d
forward voltage
reverse voltage
reverse current
diode capacitance
I
F
= 50 mA
I
R
= 10
A
V
R
= 50 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 5 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
L
charge carrier life time
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
;
measured at I
R
= 3 mA
I
F
= 10 mA; f = 100 MHz
50
PARAMETER
CONDITIONS
MIN.
BAP51-05W
TYP.
MAX.
UNIT
0.95
0.4
0.3
0.2
5.5
3.6
1.5
550
1.1
100
0.55
0.35
9
6.5
2.5
V
V
nA
pF
pF
pF
ns
L
S
Note
series inductance
1.6
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
250
UNIT
K/W
2001 Jan 23
3
NXP Semiconductors
Product specification
General purpose PIN diode
GRAPHICAL DATA
BAP51-05W
handbook, halfpage
10
2
MLD507
rD
(Ω)
10
500
handbook, halfpage
Cd
(fF)
400
MLD508
300
200
1
100
10
−1
10
−1
1
10
IF (mA)
10
2
0
0
4
8
12
16
VR (V)
20
f = 100 MHz; T
j
= 25
C.
f = 100 MHz; T
j
= 25
C.
Fig.2
Forward resistance as a function of forward
current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
MGS659
handbook, halfpage
|S |
2
0
21
(dB)
−0.5
handbook, halfpage
s
2
0
MLD509
21
(dB)
−10
(1)
(2)
(3)
−1
−20
−1.5
−30
−2
−40
−2.5
0.5
1
1.5
2
2.5
f (GHz)
3
−50
0.5
1
1.5
2
2.5
f (GHz)
3
(1) I
F
= 10 mA.
(2) I
F
= 1 mA
(3) I
F
= 0.5 mA
Diode inserted in series with a 50
stripline circuit and biased via the
analyzer Tee network. T
amb
= 25
C.
Diode zero biased and inserted in series with a 50
stripline circuit.
T
amb
= 25
C.
Fig.4
Insertion loss (s
21
2
) of the diode as a
function of frequency; typical values.
Fig.5
Isolation (s
21
2
) of the diode as a function of
frequency; typical values.
2001 Jan 23
4
NXP Semiconductors
Product specification
General purpose PIN diode
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
BAP51-05W
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
JEITA
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2001 Jan 23
5
