DISCRETE SEMICONDUCTORS
DATA SHEET
BAP65-03
Silicon PIN diode
Product specification
Supersedes data of 2001 May 11
2004 Feb 11
NXP Semiconductors
Product specification
Silicon PIN diode
FEATURES
High voltage, current controlled
RF resistor for RF switches
Low diode capacitance
Low diode forward resistance (low loss)
Very low series inductance.
APPLICATIONS
RF attenuators and switches
Bandswitch for TV tuners
Series diode for mobile communication transmit/receive
switch.
DESCRIPTION
Planar PIN diode in a SOD323 small SMD plastic package.
ORDERING INFORMATION
TYPE
NUMBER
BAP65-03
PACKAGE
NAME
DESCRIPTION
plastic surface mounted package; 2 leads
PINNING
PIN
1
2
BAP65-03
DESCRIPTION
cathode
anode
1
2
sym006
Marking code:
D3.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD323) and symbol.
VERSION
SOD323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
90
C
CONDITIONS
65
65
MIN.
MAX.
30
100
500
+150
+150
UNIT
V
mA
mW
C
C
2004 Feb 11
2
NXP Semiconductors
Product specification
Silicon PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
C
unless otherwise specified.
SYMBOL
V
F
I
R
C
d
PARAMETER
forward voltage
reverse leakage current
diode capacitance
CONDITIONS
I
F
= 50 mA
V
R
= 20 V
V
R
= 0 V; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 3 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 1 mA; f = 100 MHz
I
F
= 5 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
I
F
= 100 mA; f = 100 MHz
s
21
2
isolation
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
s
21
2
insertion loss
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
s
21
2
insertion loss
I
F
= 5 mA; f = 900 MHz
I
F
= 5 mA; f = 1800 MHz
I
F
= 5 mA; f = 2450 MHz
s
21
2
insertion loss
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
s
21
2
insertion loss
I
F
= 100 mA; f = 900 MHz
I
F
= 100 mA; f = 1800 MHz
I
F
= 100 mA; f = 2450 MHz
L
charge carrier life time
0.65
0.55
0.5
0.375
1
0.65
0.56
0.35
10.2
5.8
4.1
0.1
0.14
0.18
0.06
0.1
0.14
0.06
0.1
0.13
0.05
0.1
0.14
TYP.
0.9
BAP65-03
MAX.
1.1
20
0.9
0.8
0.95
0.9
V
UNIT
nA
pF
pF
pF
pF
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
s
when switched from I
F
= 10 mA to 0.17
I
R
= 6 mA; R
L
= 100
;
measured at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
1.5
L
S
Note
series inductance
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-s)
PARAMETER
thermal resistance from junction to soldering point
VALUE
120
UNIT
K/W
2004 Feb 11
3
NXP Semiconductors
Product specification
Silicon PIN diode
GRAPHICAL DATA
BAP65-03
handbook, halfpage
10
MLD503
rD
(Ω)
1000
handbook, halfpage
Cd
(fF)
800
MLD504
600
1
400
200
10
−1
10
−1
1
10
IF (mA)
10
2
0
0
4
8
12
16
VR (V)
T
j
= 25
C;
f = 1 MHz.
20
T
j
= 25
C;
f = 100 MHz.
Fig.2
Forward resistance as a function of forward
current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
s
2
0
MLD505
handbook, halfpage
(5)
0
MLD506
21
(
dB
)
−0.1
s21
2
(
dB
)
−10
(1)
(2)
(3)
(4)
−0.2
−20
−0.3
−0.4
−30
−0.5
0
1000
2000
f (MHz)
3000
−40
0
1000
2000
f (MHz)
3000
(1) I
F
= 0.5 mA.
(2) I
F
= 1 mA.
(3) I
F
= 5 mA.
(4) I
F
= 10 mA.
(5) I
F
= 100 mA.
Diode zero biased and inserted in series with a 50
stripline circuit.
T
amb
= 25
C.
Diode inserted in series with a 50
stripline circuit and biased
via the analyzer Tee network; T
amb
= 25
C.
Fig.4
Insertion loss (s
21
2
) of the diode as a
function of frequency; typical values.
Fig.5
Isolation (s
21
2
) of the diode as a function of
frequency; typical values.
2004 Feb 11
4
NXP Semiconductors
Product specification
Silicon PIN diode
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
BAP65-03
SOD323
D
A
E
X
H
D
v
M
A
Q
1
2
b
p
A
A
1
(1)
c
L
p
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A
1
max
0.05
b
p
0.40
0.25
c
0.25
0.10
D
1.8
1.6
E
1.35
1.15
H
D
2.7
2.3
L
p
0.45
0.15
Q
0.25
0.15
v
0.2
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
SOD323
REFERENCES
IEC
JEDEC
JEITA
SC-76
EUROPEAN
PROJECTION
ISSUE DATE
03-12-17
06-03-16
2004 Feb 11
5
NXP MCU
