首页 > 器件类别 > 分立半导体 > 二极管

BAP70AM,135

PIN Diodes QUAD AM PIN DIODE

器件类别:分立半导体    二极管   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

器件标准:

下载文档
BAP70AM,135 在线购买

供应商:

器件:BAP70AM,135

价格:-

最低购买:-

库存:点击查看

点击购买

器件参数
参数名称
属性值
Brand Name
NXP Semiconductor
是否Rohs认证
符合
零件包装代码
TSSOP
包装说明
R-PDSO-G6
针数
6
制造商包装代码
SOT363
Reach Compliance Code
compliant
其他特性
LOW DISTORTION
应用
ATTENUATOR
配置
2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
最大二极管电容
0.25 pF
二极管元件材料
SILICON
最大二极管正向电阻
1.9 Ω
二极管类型
PIN DIODE
最大正向电压 (VF)
1.1 V
JESD-30 代码
R-PDSO-G6
JESD-609代码
e3
少数载流子标称寿命
1.25 µs
湿度敏感等级
1
元件数量
4
端子数量
6
最高工作温度
150 °C
最低工作温度
-65 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
最大功率耗散
0.3 W
认证状态
Not Qualified
最大重复峰值反向电压
50 V
最大反向电流
0.1 µA
反向测试电压
50 V
表面贴装
YES
技术
POSITIVE-INTRINSIC-NEGATIVE
端子面层
Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
BAP70-02
Silicon PIN diode
Rev. 7 — 16 April 2014
Product data sheet
1. Product profile
1.1 General description
Planar PIN diode in a SOD523 ultra small SMD plastic package.
1.2 Features and benefits
High voltage; current controlled RF resistor for attenuators
Low diode capacitance
Very low series inductance
1.3 Applications
RF attenuators
(SAT) TV
Car radio
2. Pinning information
Table 1.
Pin
1
2
Discrete pinning
Description
cathode
anode
1
2
sym006
Simplified outline
Symbol
3. Ordering information
Table 2.
Ordering information
Name
BAP70-02
-
Description
plastic surface-mounted package; 2 leads
Version
SOD523
Type number Package
4. Marking
Table 3.
BAP70-02
Marking
Marking code
K8
Type number
NXP Semiconductors
BAP70-02
Silicon PIN diode
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
P
tot
T
stg
T
j
Parameter
reverse voltage
forward current
total power dissipation
storage temperature
junction temperature
Conditions
continuous voltage
continuous current
T
sp
= 90
C
Min
-
-
-
65
65
Max
50
100
415
+150
+150
Unit
V
mA
mW
C
C
6. Thermal characteristics
Table 5.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
Typ
145
Unit
K/W
7. Characteristics
Table 6.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol
V
F
I
R
C
d
Parameter
forward voltage
reverse current
diode capacitance
Conditions
I
F
= 50 mA
V
R
= 50 V
see
Figure 1;
f = 1 MHz;
V
R
= 0 V
V
R
= 1 V
V
R
= 5 V
V
R
= 20 V
r
D
diode forward resistance
see
Figure 2;
f = 100 MHz;
I
F
= 0.5 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
L
charge carrier life time
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
;
measured at
I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
-
-
-
-
-
77
40
5.4
1.4
1.25
100
50
7
1.9
-
s
-
-
-
-
570
400
270
200
-
-
-
250
fF
fF
fF
fF
Min
-
-
Typ
0.9
-
Max
1.1
100
Unit
V
nA
L
S
series inductance
-
0.6
-
nH
BAP70-02
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 7 — 16 April 2014
2 of 8
NXP Semiconductors
BAP70-02
Silicon PIN diode
C
d
600
mce008
10
3
r
D
(Ω)
mce007
(fF)
500
400
10
2
300
200
10
100
1
10
-1
0
0
5
10
15
V
R
(V)
20
1
10
I
F
(mA)
10
2
f = 1 MHz; T
j
= 25
C.
f = 100 MHz; T
j
= 25
C.
Fig 1.
Diode capacitance as a function of reverse
voltage; typical values
Fig 2.
Diode forward resistance as a function of
forward current; typical values
BAP70-02
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 7 — 16 April 2014
3 of 8
NXP Semiconductors
BAP70-02
Silicon PIN diode
8. Package outline
Plastic surface-mounted package; 2 leads
SOD523
A
c
HE
v
M
A
D
A
0
0.5
scale
1 mm
1
E
bp
2
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.65
0.58
bp
0.34
0.26
c
0.17
0.11
D
1.25
1.15
E
0.85
0.75
HE
1.65
1.55
v
0.1
(1)
Note
1. The marking bar indicates the cathode.
OUTLINE
VERSION
SOD523
REFERENCES
IEC
JEDEC
JEITA
SC-79
EUROPEAN
PROJECTION
ISSUE DATE
02-12-13
06-03-16
Fig 3.
Package outline SOD523
9. Abbreviations
Table 7.
Acronym
PIN
SMD
RF
Abbreviations
Description
P-type, Intrinsic, N-type
Surface Mounted Device
Radio Frequency
BAP70-02
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 7 — 16 April 2014
4 of 8
NXP Semiconductors
BAP70-02
Silicon PIN diode
10. Revision history
Table 8.
Revision history
Release date
20140416
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Preliminary data sheet
Preliminary data sheet
Change notice
-
-
-
-
-
-
-
Supersedes
BAP70-02 v.6
BAP70-02_N v.5
BAP70-02_N v.4
BAP70-02 v.3
BAP70-02_N v.2
BAP70-02_N v.1
-
Document ID
BAP70-02 v.7
Modifications:
BAP70-02 v.6
BAP70-02_N v.5
BAP70-02_N v.4
BAP70-02 v.3
(9397 750 10093)
BAP70-02_N v.2
(9397 750 10079)
BAP70-02_N v.1
(9397 750 09578)
Rollback to previous version
20140211
20080102
20070322
20020806
20020702
20020402
BAP70-02
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 7 — 16 April 2014
5 of 8
查看更多>
热门器件
热门资源推荐
器件捷径:
S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY
需要登录后才可以下载。
登录取消