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BAR65-07F

Pin Diode, 30V V(BR), Silicon, TSFP-4

器件类别:二极管    PIN 二极管   

厂商名称:Infineon(英飞凌)

厂商官网:http://www.infineon.com/

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Infineon(英飞凌)
包装说明
TSFP-4
针数
4
Reach Compliance Code
compliant
ECCN代码
EAR99
Is Samacsys
N
应用
SWITCHING
最小击穿电压
30 V
配置
SEPARATE, 2 ELEMENTS
最大二极管电容
0.9 pF
二极管元件材料
SILICON
最大二极管正向电阻
0.9 Ω
二极管类型
PIN DIODE
JESD-30 代码
R-PDSO-F4
少数载流子标称寿命
0.08 µs
湿度敏感等级
1
元件数量
2
端子数量
4
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
最大功率耗散
0.25 W
认证状态
Not Qualified
表面贴装
YES
技术
POSITIVE-INTRINSIC-NEGATIVE
端子形式
FLAT
端子位置
DUAL
Base Number Matches
1
文档预览
BAR65-07F
Silicon PIN Diode
Preliminary data
Band switch for TV-tuners
Series diode for mobile communication
transmit-receiver switch
Very low forward resistance (low insertion loss)
Low capacitance
Ultra small SMD package for dual diodes
4
3
3
4
XYs
2
1
TSFP-4
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
1
For
calculation of
R
thJA
please refer to Application Note Thermal Resistance
1







D 1
D 2
1
2
Type
BAR65-07F
Maximum Ratings
Parameter
Marking
Pin Configuration
PS
1=C1 2=C2 3=A2 4=A1 -
Package
-
TSFP-4
Symbol
V
R
I
F
P
tot
T
op
T
stg
Value
30
100
250
-55 ... 125
-55 ... 150
Unit
V
mA
mW
°C
Diode reverse voltage
Forward current
Total power dissipation
T
S
120°C
Symbol
R
thJS
Value
120
Unit
K/W
Mar-08-2002
BAR65-07F
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Reverse current
V
R
= 20 V
Forward voltage
I
F
= 100 mA
AC Characteristics
Diode capacitance-
V
R
= 0 V,
f
= 100 MHz
V
R
= 1 V,
f
= 1 MHz
V
R
= 3 V,
f
= 1 MHz
Forward resistance
I
F
= 5 mA,
f
= 100 MHz
I
F
= 10 mA,
f
= 100 MHz
I
F
= 10 mA,
I
R
= 6 mA,
I
R
= 3 mA
Case capacitance
f
= 1 MHz
Series inductance
L
S
-
0.6
-
nH
r
f
-
-
rr
Symbol
min.
I
R
V
F
-
-
Values
typ.
-
0.93
max.
20
1
Unit
nA
V
C
T
-
-
-
tbd
0.6
0.57
0.65
0.56
80
0.05
-
0.9
0.8
0.95
0.9
-
-
pF
2

Charge carrier life time
-
-
C
C
Mar-08-2002

ns
pF
BAR65-07F
Diode capacitance
C
T
=
f
= 1MHz
1
pF
f
= 100MHz
Ohm
3
2.4
0.8
2.2
2
C
T
0.7
r
f
1.8
1.6
1.4
1.2
1
0.6
0.5
0.4
0.8
0.6
0.3
0.4
0.2
0.2
0
1
2
3
4
5
6
7
8
V
10
0
-1
10
10
V
R
T
A
= 25°C
10
3
mA
120
mA
100
90
80
10
2
I
F
70
60
50
40
30
20
10
0
0
15
30
45
60
75
90 105 120
°C
150
10
-1
400
500
600
700
800
mV
I
F
10
1
10
0
T
S
3


Forward current
I
F
=
(
T
S
)
Forward current
I
F
=
(
V
F
)

0
(V
R
)
Forward resistance
r
f
=
(
I
F
)

mA
10
1
I
F
1000
V
F
Mar-08-2002
BAR65-07F
Permissible Pulse Load

-5
I
Fmax
/
I
FDC
=
10
2
(
t
p
)
10
3
K/W
I
Fmax
/I
FCD
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
2
10
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10
0 -6
10
10
10
-4
10
-3
10
-2
s
10
0
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
t
p
4
Mar-08-2002

Permissible Puls Load
R
thJS
=
(
t
p
)
s
10
0
t
p
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