BAR67...
Silicon PIN Diode
•
For low loss RF switches and attenuators
•
Very low capacitance at zero volt reverse
bias at frequencies above 1 GHz (typ. 0.25 pF)
•
Low forward resistance (typ. 1.5
Ω
@ 5mA)
•
Low harmonics
•
Pb-free (RoHS compliant) package
BAR67-02V
BAR67-04
!
,
,
Type
BAR67-02V
BAR67-04
Package
SC79
SOT23
Configuration
single
series
L
S
(nH)
0.6
1.8
Marking
T
PMs
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Parameter
Diode reverse voltage
Forward current
Total power dissipation
T
S
≤
118°C, BAR67-02V
T
S
≤
25°C, BAR67-04
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
1)
BAR67-02V
BAR67-04
1
For
Symbol
V
R
I
F
P
tot
Value
150
200
250
250
Unit
V
mA
mW
T
j
T
op
T
stg
Symbol
R
thJS
150
-55 ... 125
-55 ... 150
°C
Value
≤
115
≤
290
Unit
K/W
calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2011-06-14
BAR67...
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Breakdown voltage
I
(BR)
= 5 µA
V
(BR)
I
R
V
F
Symbol
min.
150
-
-
Values
typ.
-
-
0.95
max.
-
20
1.2
Unit
V
nA
V
Reverse current
V
R
= 100 V
Forward voltage
I
F
= 50 mA
AC Characteristics
Diode capacitance
V
R
= 5 V,
f
= 1 MHz
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 1 GHz
V
R
= 0 V,
f
= 1.8 GHz
Reverse parallel resistance
V
R
= 0 V,
f
= 100 MHz
V
R
= 0 V,
f
= 1 GHz
V
R
= 0 V,
f
= 1.8 GHz
Forward resistance
I
F
= 5 mA,
f
= 100 MHz
I
F
= 10 mA,
f
= 100 MHz
Charge carrier life time
I
F
= 10 mA,
I
R
= 6 mA, measured at
I
R
= 3 mA,
R
L
= 100
Ω
I-region width
W
I
-
13
-
µm
τ
rr
r
f
-
-
-
1.5
1
700
1.8
-
-
ns
R
P
-
-
-
25
4
2.5
-
-
-
Ω
C
T
-
-
-
-
0.35
0.35
0.25
0.23
0.55
0.9
-
-
kΩ
pF
2
2011-06-14
BAR67...
Diode capacitance
C
T
=
ƒ
(V
R
)
f
= Parameter
0.5
F
Reverse parallel resistance
R
P
=
ƒ(V
R
)
f
= Parameter
10
4
KOhm
10
3
0.4
0.35
1 MHz
100 MHz
1 GHz
1.8 GHz
C
T
R
p
10
2
100 MHz
0.3
10
1
1 GHz
1.8 GHz
0.25
0.2
10
0
0.15
10
-1
0
0.1
0
5
10
15
20
25
30
V
40
5
10
15
20
25
30
V
40
V
R
V
R
Forward resistance
r
f
=
ƒ
(I
F
)
f
= 100MHz
10
3
Ohm
Forward current
I
F
=
ƒ
(V
F
)
T
A
= Parameter
10
0
A
10
-1
10
2
10
-2
10
1
I
F
10
-3
r
f
10
-4
10
0
10
-5
-40 °C
25 °C
85 °C
125 °C
10
-1 -2
10
10
-1
10
0
10
1
mA
10
2
10
-6
0
0.2
0.4
0.6
0.8
V
1.2
I
F
V
F
3
2011-06-14
BAR67...
Forward current
I
F
=
ƒ
(T
S
)
BAR67-02V
250
mA
Forward current
I
F
=
ƒ
(T
S
)
BAR67-04
220
mA
200
175
180
160
I
F
150
125
I
F
90 105 120
°C
140
120
100
100
80
75
50
25
0
0
60
40
20
15
30
45
60
75
150
0
0
20
40
60
80
100
120
°C
150
T
S
T
S
Permissible Puls Load
R
thJS
=
ƒ
(t
p
)
BAR67-02V
10
3
K/W
Permissible Pulse Load
I
Fmax
/
I
FDC
=
ƒ
(t
p
)
BAR67-02V
10
2
10
2
I
Fmax
/I
FDC
10
1
10
0
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
10
1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
R
thJS
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
P
t
P
4
2011-06-14
BAR67...
Permissible Puls Load
R
thJS
=
ƒ
(t
p
)
BAR67-04
10
3
K/W
10
2
R
thJS
10
1
10
0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10
-1 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
t
P
5
2011-06-14
