DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAS116
Low-leakage diode
Product data sheet
Supersedes data of 1999 May 26
2003 Dec 12
NXP Semiconductors
Product data sheet
Low-leakage diode
FEATURES
•
Plastic SMD package
•
Low leakage current: typ. 3 pA
•
Switching time: typ. 0.8
µs
•
Continuous reverse voltage: max. 75 V
•
Repetitive peak reverse voltage: max. 85 V
•
Repetitive peak forward current: max. 500 mA.
lumns
BAS116
PINNING
PIN
1
2
3
DESCRIPTION
anode
not connected
cathode
2
1
APPLICATION
•
Low leakage current applications in surface mounted
circuits.
DESCRIPTION
Epitaxial medium-speed switching diode with a low
leakage current in a small SOT23 plastic SMD package.
Top view
Marking code:
JVp = made in Hong Kong;
JVt = made in Malaysia;
JVW = Made in China.
2
n.c.
3
3
1
MAM106
Fig.1
Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BAS116
−
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
RRM
V
R
I
F
I
FRM
I
FSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to surge;
see Fig.4
t
p
= 1
µs
t
p
= 1 ms
t
p
= 1 s
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
4
1
0.5
250
+150
150
A
A
A
mW
°C
°C
see Fig.2; note 1
CONDITIONS
MIN.
−
−
−
−
MAX.
85
75
215
500
UNIT
V
V
mA
mA
Note
1. Device mounted on an FR4 printed-circuit board.
2003 Dec 12
2
NXP Semiconductors
Product data sheet
Low-leakage diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
see Fig.5
V
R
= 75 V
V
R
= 75 V; T
j
= 150
°C
C
d
t
rr
diode capacitance
reverse recovery time
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 10 mA to I
R
= 10 mA;
R
L
= 100
Ω;
measured at I
R
= 1 mA; see Fig.7
−
−
−
−
CONDITIONS
TYP.
BAS116
MAX.
0.9
1
1 .1
1. 25
UNIT
V
V
V
V
nA
nA
pF
µs
0.003 5
3
2
0.8
80
−
3
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-tp)
R
th(j-a)
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
330
500
UNIT
K/W
K/W
2003 Dec 12
3
NXP Semiconductors
Product data sheet
Low-leakage diode
GRAPHICAL DATA
MLB755
BAS116
handbook, halfpage
300
handbook, halfpage
300
MLB752 - 1
IF
(mA)
200
IF
(mA)
200
(1)
(2)
(3)
100
100
0
0
100
T amb (
o
C)
200
0
0
0.4
0.8
1.2
V F (V)
1.6
Device mounted on an FR4 printed-circuit board.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.2
Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3
Forward current as a function of forward
voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBG704
10
1
10
−1
1
10
10
2
10
3
tp (µs)
10
4
Based on square wave currents; T
j
= 25
°C
prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Dec 12
4
NXP Semiconductors
Product data sheet
Low-leakage diode
BAS116
10
2
I
R
(nA)
10
(1)
mlb754
handbook, halfpage
2
MBG526
Cd
(pF)
1
1
10
−1
10
−2
(2)
10
−3
0
0
50
100
150
T
j
(°C)
200
0
5
10
15
VR (V)
20
(1) Maximum values.
(2) Typical values.
V
R
= 75 V.
f = 1 MHz; T
j
= 25
°C.
Fig.5
Reverse current as a function of junction
temperature.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
handbook, full pagewidth
tr
D.U.T.
10%
SAMPLING
OSCILLOSCOPE
R i = 50
Ω
VR
90%
tp
t
RS = 50
Ω
V = VR I F x R S
IF
IF
t rr
t
(1)
MGA881
input signal
output signal
(1) I
R
= 1 mA.
Fig.7 Reverse recovery time test circuit and waveforms.
2003 Dec 12
5
